BSC0901NSATMA1

Mfr. #:: BSC0901NSATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSC0901NSATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TDSON-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 100 A

Rds On - Drain-Source-Widerstand:: 1.6 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1.2 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 44 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 69 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: OptiMOS

Verpackung:: Spule

Höhe:: 1.27 mm

Länge:: 5.9 mm

Transistortyp:: 1 N-Channel

Breite:: 5.15 mm

Marke:: Infineon-Technologien

Vorwärtstranskonduktanz - Min:: 70 S

Abfallzeit:: 4.8 ns

Produktart:: MOSFET

Anstiegszeit:: 6.8 ns

Werkspackungsmenge:: 5000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 28 ns

Typische Einschaltverzögerungszeit:: 5.4 ns

Teil # Aliase:: BSC0901NS BSC91NSXT SP000800248

Tags: BSC0901, BSC090, BSC09, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC0901NSATMA1 Beschreibung

*** Source Electronics: Trans MOSFET N-CH 30V 28A 8-Pin TDSON EP T/R / MOSFET N-CH 30V 100A 8TDSON

***ment14 APAC: MOSFET, N-CH, 30V, 100A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:30V; On Resistance

***nell: MOSFET, N-CH, 30V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 69W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

*** Source Electronics: MOSFET N-CH 30V 28A POWER56 / Trans MOSFET N-CH Si 30V 28A 8-Pin PQFN EP T/R

***emi: N-Channel PowerTrench® MOSFET 30V, 160A, 2.0mΩ

***r Electronics: Power Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***el Electronic: Embedded - Microcontrollers 3 (168 Hours) 64-LQFP 48 10K x 8 Internal DMA, LVD, POR, PWM, WDT Surface Mount Tray 32-Bit MCU 32-Bit RX23T RX CISC 128KB Flash 3.3V/5V 64-Pin LFQFP Tray

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

***emi: Power MOSFET 30V 117A 3 mOhm Single N-Channel SO-8FL FETky

***p One Stop: Trans MOSFET N-CH 30V 36.7A 5-Pin(4+Tab) SO-FL T/R

***ponent Stockers USA: 13.2 A 30 V 0.0048 ohm N-CHANNEL Si POWER MOSFET

***(Formerly Allied Electronics): MOSFET N-Channel 30V 36.7A DFN5

***ment14 APAC: MOSFET,N CH,W DIODE,30V,13.2A,SO8 FL

***r Electronics: Power Field-Effect Transistor, 13.2A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***or: MOSFET N-CH 30V 13.2A/117A 5DFN

***nell: MOSFET,N CH,W DIODE,30V,13.2A,SO8 FL; Transistor Polarity: N Channel; Continuous Drain Current Id: 117A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 73.5W; Transistor Case Style: DFN; No. of Pins: 5Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C

***th Star Micro: NTMFS4898N: Power MOSFET 30V 117A 3 mOhm Single N-Channel with Integrated Schottky SO-8FL

***(Formerly Allied Electronics): NTMFS4898NFT1G N-channel MOSFET Transistor; 37 A; 30 V; 8-Pin SO-8FL

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:13.2A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0022ohm; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:0.93W ;RoHS Compliant: Yes

***ure Electronics: N-Channel 30 V 27 A 3.9 mOhm STripFET VII DeepGATE Power Mosfet - POWER FLAT

***icroelectronics: N-channel 30 V, 0.0033 Ohm typ., 27 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6 package

***ical: Trans MOSFET N-CH 30V 105A 8-Pin Power Flat T/R

***r Electronics: Power Field-Effect Transistor, 105A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***el Electronic: IC DECOD VIDEO PAL/NTSC 128HTQFP

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

***klin Elektronik: INFINEON SMD MOSFET NFET 30V 27A 3,1mΩ 150°C PQFN IRFH8318TRPBF

***ure Electronics: Single N-Channel 30 V 3.1 mOhm 41 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***Yang: Trans MOSFET N-CH 30V 27A 8-Pin PQFN EP T/R - Tape and Reel

***nell: MOSFET, N-CH, 30V, 50A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 59W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 1.3C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS

***ure Electronics: Single N-Channel 30 V 3.3 mOhm 34 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***et Europe: Transistor MOSFET N-CH 30V 25A 8-Pin QFN T/R

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:24mA; On Resistance, Rds(on):0.033ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Industry-leading quality; 100% Rg tested; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET

***ment14 APAC: MOSFET, N, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:25A; Package / Case:PQFN; Power Dissipation Pd:3.4W; Pulse Current Idm:200A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSC0901NSATMA1 DISTI # V72:2272_06384114	Infineon Technologies AG	Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant	62	25:$0.8853 10:$0.9900 1:$1.1502
BSC0901NSATMA1 DISTI # V36:1790_06384114	Infineon Technologies AG	Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant	0	5000000:$0.3786 2500000:$0.3789 500000:$0.4033 50000:$0.4466 5000:$0.4539
BSC0901NSATMA1 DISTI # BSC0901NSATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 100A 8TDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9688In Stock	1000:$0.5272 500:$0.6678 100:$0.8084 10:$1.0370 1:$1.1600
BSC0901NSATMA1 DISTI # BSC0901NSATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 100A 8TDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9688In Stock	1000:$0.5272 500:$0.6678 100:$0.8084 10:$1.0370 1:$1.1600
BSC0901NSATMA1 DISTI # BSC0901NSATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 100A 8TDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	5000In Stock	10000:$0.4368 5000:$0.4539
BSC0901NSATMA1 DISTI # 31433907	Infineon Technologies AG	Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant	62	20:$1.1502
BSC0901NSATMA1 DISTI # SP000800248	Infineon Technologies AG	Trans MOSFET N-CH 30V 100A 8-Pin TDSON T/R (Alt: SP000800248) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	50000:€0.2909 30000:€0.3129 20000:€0.3399 10000:€0.3699 5000:€0.4529
BSC0901NSXT DISTI # BSC0901NSATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP - Tape and Reel (Alt: BSC0901NSATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.3299 30000:$0.3359 20000:$0.3479 10000:$0.3609 5000:$0.3739
BSC0901NSATMA1 DISTI # 50Y1807	Infineon Technologies AG	MOSFET Transistor, N Channel, 100 A, 30 V, 0.0016 ohm, 10 V, 2 V RoHS Compliant: Yes	3711	1000:$0.4930 500:$0.6240 250:$0.6650 100:$0.7060 50:$0.7770 25:$0.8480 10:$0.9190 1:$1.0700
BSC0901NS DISTI # 726-BSC0901NS	Infineon Technologies AG	MOSFET N-Ch 30V 100A TDSON-8 OptiMOS RoHS: Compliant	4706	1:$1.0600 10:$0.9100 100:$0.6990 500:$0.6180 1000:$0.4880
BSC0901NSATMA1 DISTI # 726-BSC0901NSATMA1	Infineon Technologies AG	MOSFET N-Ch 30V 100A TDSON-8 OptiMOS RoHS: Compliant	4102	1:$1.0600 10:$0.9100 100:$0.6990 500:$0.6180 1000:$0.4880
BSC0901NSATMA1 DISTI # 1339798	Infineon Technologies AG	MOSFET OPTIMOS3 30V 100A 1.9MOHM TDSON8, PK	155	2500:£0.3560 1250:£0.3700 250:£0.5300 50:£0.6880 5:£0.8500
BSC0901NSATMA1 DISTI # 1336584	Infineon Technologies AG	MOSFET OPTIMOS3 30V 100A 1.9MOHM TDSON8, RL	1630	10000:£0.2450 5000:£0.2570
BSC0901NSATMA1 DISTI # 2480742RL	Infineon Technologies AG	MOSFET, N-CH, 30V, 100A, TDSON-8 RoHS: Compliant	0	5000:$0.7210 1000:$0.7350 500:$0.9310 100:$1.0500 10:$1.3700 1:$1.6000
BSC0901NSATMA1 DISTI # 2480742	Infineon Technologies AG	MOSFET, N-CH, 30V, 100A, TDSON-8 RoHS: Compliant	3711	5000:$0.7210 1000:$0.7350 500:$0.9310 100:$1.0500 10:$1.3700 1:$1.6000
BSC0901NSATMA1 DISTI # 2480742	Infineon Technologies AG	MOSFET, N-CH, 30V, 100A, TDSON-8	3591	500:£0.4480 250:£0.4780 100:£0.5060 25:£0.6600 5:£0.7750

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1987
Menge eingeben:

Der aktuelle Preis von BSC0901NSATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,06 $~~; ~~1,06 $~~

10: ~~0,91 $~~; ~~9,10 $~~

100: ~~0,70 $~~; ~~69,90 $~~

500: ~~0,62 $~~; ~~309,00 $~~

1000: ~~0,49 $~~; ~~488,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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BSC0901NSATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes