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IPU80R1K2P7AKMA1

IPU80R1K2P7AKMA1
Mfr. #:
IPU80R1K2P7AKMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPU80R1K2P7AKMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPU80R1K2P7AKMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
IPAK-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
4.5 A
Rds On - Drain-Source-Widerstand:
1 Ohms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
11 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
37 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Rohr
Serie:
CoolMOS P7
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
20 ns
Produktart:
MOSFET
Anstiegszeit:
8 ns
Werkspackungsmenge:
1500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
40 ns
Typische Einschaltverzögerungszeit:
10 ns
Teil # Aliase:
IPU80R1K2P7 SP001644614
Tags
IPU80R1, IPU80, IPU8, IPU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 1.2 Ohm 11 nC CoolMOS™ Power Mosfet - IPAK
***i-Key
MOSFET N-CH 800V 4.5A TO251-3
***et Europe
LOW POWER_NEW
***ark
Mosfet, N-Ch, 800V, 4.5A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:800V; On Resistance Rds(On):1Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 4.5A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:37W; Transistor Case Style:TO-251; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 800V, 4,5A, TO-251; Polarità Transistor:Canale N; Corrente Continua di Drain Id:4.5A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):1ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:37W; Modello Case Transistor:TO-251; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
800V CoolMOS P7 MOSFETs
Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.
Teil # Mfg. Beschreibung Aktie Preis
IPU80R1K2P7AKMA1
DISTI # IPU80R1K2P7AKMA1-ND		Infineon Technologies AGMOSFET N-CH 800V 4.5A TO251-3
RoHS: Compliant
Min Qty: 1
Container: Tube		1490In Stock
  • 6000:$0.4424
  • 3000:$0.4657
  • 1500:$0.4990
  • 100:$0.7651
  • 25:$0.9312
  • 10:$0.9810
  • 1:$1.1000
IPU80R1K2P7AKMA1
DISTI # SP001644614		Infineon Technologies AGLOW POWER_NEW (Alt: SP001644614)
RoHS: Compliant
Min Qty: 75		Europe - 1500
  • 750:€0.4069
  • 450:€0.4349
  • 300:€0.4989
  • 150:€0.5979
  • 75:€0.7119
IPU80R1K2P7AKMA1
DISTI # IPU80R1K2P7AKMA1		Infineon Technologies AGLOW POWER_NEW - Rail/Tube (Alt: IPU80R1K2P7AKMA1)
RoHS: Compliant
Min Qty: 1500
Container: Tube		Americas - 0
  • 15000:$0.4019
  • 9000:$0.4089
  • 6000:$0.4239
  • 3000:$0.4399
  • 1500:$0.4559
IPU80R1K2P7AKMA1
DISTI # IPU80R1K2P7AKMA1		Infineon Technologies AGLOW POWER_NEW - Bulk (Alt: IPU80R1K2P7AKMA1)
Min Qty: 863
Container: Bulk		Americas - 0
    IPU80R1K2P7AKMA1
    DISTI # IPU80R1K2P7    		Infineon Technologies AGLOW POWER_NEW (Alt: IPU80R1K2P7)
    RoHS: Compliant
    Min Qty: 1500    		Asia - 0
    • 75000:$0.4010
    • 37500:$0.4062
    • 15000:$0.4114
    • 7500:$0.4168
    • 4500:$0.4281
    • 3000:$0.4400
    • 1500:$0.4526
    IPU80R1K2P7AKMA1
    DISTI # 726-IPU80R1K2P7AKMA1    		Infineon Technologies AGMOSFET
    RoHS: Compliant    		210
    • 1:$1.0400
    • 10:$0.8870
    • 100:$0.6820
    • 500:$0.6020
    • 1000:$0.4760
    IPU80R1K2P7AKMA1Infineon Technologies AG 
    RoHS: Not Compliant    		1500
    • 1000:$0.3800
    • 500:$0.4000
    • 100:$0.4200
    • 25:$0.4400
    • 1:$0.4700
    IPU80R1K2P7AKMA1
    DISTI # XSKDRABV0021275    		Infineon Technologies AGPowerField-EffectTransistor,50AI(D),60V,0.0088ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-252AA
    RoHS: Compliant    		4500 in Stock0 on Order
    • 4500:$0.5560
    • 1500:$0.5957
    IPU80R1K2P7AKMA1
    DISTI # 2771338    		Infineon Technologies AGMOSFET, N-CH, 800V, 4.5A, TO-251
    RoHS: Compliant    		105
    • 6000:$0.6690
    • 3000:$0.7020
    • 1500:$0.7520
    • 100:$1.1600
    • 25:$1.4100
    • 10:$1.4800
    • 1:$1.6600
    IPU80R1K2P7AKMA1
    DISTI # 2771338    		Infineon Technologies AGMOSFET, N-CH, 800V, 4.5A, TO-251105
    • 500:£0.4370
    • 250:£0.4660
    • 100:£0.4950
    • 10:£0.6430
    • 1:£0.7530
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    Verfügbarkeit
    Aktie:
    210
    Auf Bestellung:
    2193
    Menge eingeben:
    Der aktuelle Preis von IPU80R1K2P7AKMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,04 $
    1,04 $
    10
    0,89 $
    8,87 $
    100
    0,68 $
    68,20 $
    500
    0,60 $
    301,00 $
    1000
    0,48 $
    476,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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