UJ3C120150K3S

UJ3C120150K3S
Mfr. #:
UJ3C120150K3S
Hersteller:
UnitedSiC
Beschreibung:
MOSFET 1200V/ 150mOhm SIC CASCODE, G3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
UJ3C120150K3S Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
UJ3C120150K3S Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
UnitedSiC
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
SiC
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1.2 kV
Id - Kontinuierlicher Drainstrom:
18.4 A
Rds On - Drain-Source-Widerstand:
180 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
25 V
Qg - Gate-Ladung:
30 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
166.7 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Verpackung:
Rohr
Serie:
UJ3C
Transistortyp:
1 N-Channel
Marke:
UnitedSiC
Abfallzeit:
7 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
36 ns
Typische Einschaltverzögerungszeit:
21 ns
Tags
UJ3C1, UJ3C, UJ3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiC Cascodes
UnitedSiC SiC Cascodes are the 3rd generation gate drive SiC devices that are a combination of high-performance SiC JFETs and cascode optimized MOSFETs. These SiC Cascodes are the enhancement-mode power switches formed by a high-voltage SiC depletion-mode JFET and a low-voltage silicon MOSFET connected in series. The SiC Cascodes offer the best performance for the intrinsic diode forward drop (VSD) and recovery charge (QRR). These devices deliver ultra-low gate charge but also the best reverse recovery characteristics of any devices of similar ratings. 
Bild Teil # Beschreibung
C2M1000170D

Mfr.#: C2M1000170D

OMO.#: OMO-C2M1000170D

MOSFET SIC MOSFET 1700V RDS ON 1 Ohm
3660

Mfr.#: 3660

OMO.#: OMO-3660

Fiber Optic Connectors SLANT TOP BOX (3660)
CCS811-LG_EK_ST

Mfr.#: CCS811-LG_EK_ST

OMO.#: OMO-CCS811-LG-EK-ST-AMS

EVALUATION KIT FOR CCS811 DIGI
C2M1000170D

Mfr.#: C2M1000170D

OMO.#: OMO-C2M1000170D-WOLFSPEED

MOSFET N-CH 1700V 4.9A TO247
3660

Mfr.#: 3660

OMO.#: OMO-3660-ADAFRUIT

Adafruit BME680 - Temperature Humidity Pressure and Gas Senso
50-37-5063

Mfr.#: 50-37-5063

OMO.#: OMO-50-37-5063-MOLEX

Headers & Wire Housings SPOX CRIMP HSG 6P
006207341906000+

Mfr.#: 006207341906000+

OMO.#: OMO-006207341906000--687

FFC & FPC Connectors 6 POS 1.25mm Solder RA SMD
15168-0111

Mfr.#: 15168-0111

OMO.#: OMO-15168-0111-488

FFC / FPC Jumper Cables FFC 1.25 Type A 6 ckts lgt 152
39-53-2064

Mfr.#: 39-53-2064

OMO.#: OMO-39-53-2064-687

FFC & FPC Connectors 6CKT RA ZIF TOP CONT THRU HOLE
Verfügbarkeit
Aktie:
30
Auf Bestellung:
2013
Menge eingeben:
Der aktuelle Preis von UJ3C120150K3S dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
14,69 $
14,69 $
10
14,00 $
140,00 $
25
12,95 $
323,75 $
50
12,25 $
612,50 $
100
11,90 $
1 190,00 $
250
10,85 $
2 712,50 $
500
10,15 $
5 075,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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