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Teil # | Mfg. | Beschreibung | Aktie | Preis |
---|---|---|---|---|
RFD16N02L | Harris Semiconductor | Power Field-Effect Transistor, 16A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Not Compliant | 1793 |
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Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: RFD16N05SM9A-CUT TAPE |
Neu und Original | |
Mfr.#: RFD10P03LSM9A OMO.#: OMO-RFD10P03LSM9A-1190 |
Power Field-Effect Transistor, 10A I(D), 30V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | |
Mfr.#: RFD12N06RLESM OMO.#: OMO-RFD12N06RLESM-1190 |
MOSFET FET 50V 100.0 MOHM DPAK | |
Mfr.#: RFD14N05LM OMO.#: OMO-RFD14N05LM-1190 |
Neu und Original | |
Mfr.#: RFD15P06SM 9A OMO.#: OMO-RFD15P06SM-9A-1190 |
Neu und Original | |
Mfr.#: RFD16N05LSM96 OMO.#: OMO-RFD16N05LSM96-1190 |
Neu und Original | |
Mfr.#: RFD16N05LSM96S5000 OMO.#: OMO-RFD16N05LSM96S5000-1190 |
Neu und Original | |
Mfr.#: RFD16N05SLM OMO.#: OMO-RFD16N05SLM-1190 |
Neu und Original | |
Mfr.#: RFD16N06LE OMO.#: OMO-RFD16N06LE-1190 |
Neu und Original | |
Mfr.#: RFD16N06SM-9A OMO.#: OMO-RFD16N06SM-9A-1190 |
Neu und Original |