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FQD30N06TM

FQD30N06TM
Mfr. #:
FQD30N06TM
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 60V 22.7A N-CHANNEL QFET MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQD30N06TM Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
22.7 A
Rds On - Drain-Source-Widerstand:
45 mOhms
Vgs - Gate-Source-Spannung:
25 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
2.39 mm
Länge:
6.73 mm
Serie:
FQD30N06
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
40 ns
Produktart:
MOSFET
Anstiegszeit:
85 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
35 ns
Typische Einschaltverzögerungszeit:
10 ns
Gewichtseinheit:
0.009184 oz
Tags
FQD30N06T, FQD30N06, FQD30N0, FQD30, FQD3, FQD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 60 V, 22.7 A, 45 mΩ, DPAK
*** Stop Electro
Power Field-Effect Transistor, 22.7A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ure Electronics
Single N-Channel 55V 0.045 Ohm 34 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***SIT Distribution GmbH
Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:27A; On Resistance Rds(On):0.045Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***ure Electronics
N-Channel 60 V 40 mOhm Surface Mount Enhancement Mode Mosfet - TO-252-3
***ark
Mosfet, N-Ch, 60V, 20A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN6040SK3-13
***itex
Transistor: N-MOSFET; unipolar; 60V; 20A; 0.04ohm; 42W; -55+150 deg.C; SMD; TO252(DPAK); AEC-Q100
***p One Stop
Trans MOSFET N-CH 60V 20A Automotive 3-Pin(2+Tab) TO-252 T/R
***icontronic
Power Field-Effect Transistor, 20A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***et
TRANS MOSFET N-CH 60V 20A 3PIN TO-252AA
***or
MOSFET N-CH 60V 20A TO252AA
***el Nordic
Contact for details
***Yang
PWR MOS ULTRAFET 60V/33A/0.035 OHMS N-CH LL TO-252AA - Bulk
***or
MOSFET N-CH 60V 20A TO252AA
***ser
MOSFETs 20a, 60V N-Channel 0.037Ohm
*** Electronic Components
MOSFET 20a 60V 0.043 Ohm Logic Level N-Ch
***i-Key Marketplace
MOSFET N-CH 60V 20A TO252AA
***r Electronics
Power Field-Effect Transistor, 20A I(D), 60V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***el Nordic
Contact for details
Teil # Mfg. Beschreibung Aktie Preis
FQD30N06TM
DISTI # FQD30N06TM		ON SemiconductorMOSFET 60V 22.7A N-CHANNEL QFET MOSFET (Alt: FQD30N06TM)
RoHS: Compliant
Min Qty: 2500		Europe - 0
  • 2500:€0.6369
  • 5000:€0.5209
  • 10000:€0.4779
  • 15000:€0.4409
  • 25000:€0.4099
FQD30N06TM
DISTI # FQD30N06TM		ON SemiconductorMOSFET 60V 22.7A N-CHANNEL QFET MOSFET - Tape and Reel (Alt: FQD30N06TM)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.4519
  • 5000:$0.4499
  • 10000:$0.4439
  • 15000:$0.4379
  • 25000:$0.4269
FQD30N06TM
DISTI # 512-FQD30N06TM		ON SemiconductorMOSFET 60V 22.7A N-CHANNEL QFET MOSFET
RoHS: Compliant		4895
  • 1:$1.2500
  • 10:$1.0700
  • 100:$0.8160
  • 500:$0.7220
  • 1000:$0.5700
  • 2500:$0.5050
  • 10000:$0.4860
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1987
    Menge eingeben:
    Der aktuelle Preis von FQD30N06TM dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,99 $
    0,99 $
    10
    0,85 $
    8,47 $
    100
    0,65 $
    65,10 $
    500
    0,58 $
    287,50 $
    1000
    0,45 $
    454,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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