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IRF3707LPBF

IRF3707LPBF
Mfr. #:
IRF3707LPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 30V 1 N-CH HEXFET 12.5mOhms 19nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF3707LPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF3707LPBF DatasheetIRF3707LPBF Datasheet (P4-P6)IRF3707LPBF Datasheet (P7-P9)IRF3707LPBF Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-262-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
62 A
Rds On - Drain-Source-Widerstand:
17 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
19 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
87 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
9.45 mm
Länge:
10.2 mm
Transistortyp:
1 N-Channel
Typ:
Smps-MOSFET
Breite:
4.5 mm
Marke:
Infineon / IR
Abfallzeit:
3.3 ns
Produktart:
MOSFET
Anstiegszeit:
78 ns
Werkspackungsmenge:
3200
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
11.8 ns
Typische Einschaltverzögerungszeit:
8.5 ns
Teil # Aliase:
SP001569952
Gewichtseinheit:
0.084199 oz
Tags
IRF3707, IRF370, IRF37, IRF3, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
***ied Electronics & Automation
MOSFET, 30V, 62A, 12.5 MOHM, 19 NC QG, TO-262
***et
Trans MOSFET N-CH 30V 62A 3-Pin(3+Tab) TO-262
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:62A; On Resistance, Rds(on):12.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
IRF3707LPBF
DISTI # IRF3707LPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 62A TO-262
RoHS: Compliant
Min Qty: 3200
Container: Tube		Limited Supply - Call
    IRF3707LPBF
    DISTI # 70018196    		Infineon Technologies AGMOSFET,30V,62A,12.5 MOHM,19 NC QG,TO-262
    RoHS: Compliant    		0
    • 3200:$1.0200
    Bild Teil # Beschreibung
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    Mfr.#: IRF3706STRRPBF

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    OMO.#: OMO-IRF3710ZLPBF-INFINEON-TECHNOLOGIES

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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1000
    Menge eingeben:
    Der aktuelle Preis von IRF3707LPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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