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IAUT300N10S5N015ATMA1

IAUT300N10S5N015ATMA1
Mfr. #:
IAUT300N10S5N015ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFET_(75V,120V(
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IAUT300N10S5N015ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IAUT300N10S5N015ATMA1 DatasheetIAUT300N10S5N015ATMA1 Datasheet (P4-P6)IAUT300N10S5N015ATMA1 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
IAUT300N10S5N015ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
HSOF-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
300 A
Rds On - Drain-Source-Widerstand:
1.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.2 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
166 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
375 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Verpackung:
Spule
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
48 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
2000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
70 ns
Typische Einschaltverzögerungszeit:
29 ns
Teil # Aliase:
IAUT300N10S5N015 SP001416130
Tags
IAUT3, IAUT, IAU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
OptiMOS-5 Power Transistor MOSFET N-Channel 100V 300A 8-Pin PG-HSOF-1 T/R
***ical
Automotive N-Channel MOSFET
***ronik
N-CH 100V 300A 1,5mOhm HSOF8
***et Europe
OptiMOS 100V 300A HSOF-8
***i-Key
100V 300A 1.5MOHM TOLL
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested
***ark
Mosfet, Aec-Q101, N-Ch, 100V, Hsof; Transistor Polarity:n Channel; Continuous Drain Current Id:300A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0013Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 100V, HSOF; Transistor Polarity:N Channel; Continuous Drain Current Id:300A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:375W; Transistor Case Style:HSOF; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, AEC-Q101, CA-N, 100V, HSOF; Polarità Transistor:Canale N; Corrente Continua di Drain Id:300A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0013ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:375W; Modello Case Transistor:HSOF; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
Teil # Mfg. Beschreibung Aktie Preis
IAUT300N10S5N015ATMA1
DISTI # V72:2272_19082750		Infineon Technologies AGOptiMOS -5 Power-Transistor306
  • 250:$5.0460
  • 100:$5.2760
  • 25:$6.0730
  • 10:$6.3690
  • 1:$7.7418
IAUT300N10S5N015ATMA1
DISTI # V36:1790_19082750		Infineon Technologies AGOptiMOS -5 Power-Transistor0
  • 2000000:$3.4710
  • 1000000:$3.4740
  • 200000:$3.6720
  • 20000:$4.0110
  • 2000:$4.0670
IAUT300N10S5N015ATMA1
DISTI # IAUT300N10S5N015ATMA1CT-ND		Infineon Technologies AG100V 300A 1.5MOHM TOLL
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1318In Stock
  • 1000:$4.3506
  • 500:$4.9951
  • 100:$5.7363
  • 10:$6.9290
  • 1:$7.6700
IAUT300N10S5N015ATMA1
DISTI # IAUT300N10S5N015ATMA1DKR-ND		Infineon Technologies AG100V 300A 1.5MOHM TOLL
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1318In Stock
  • 1000:$4.3506
  • 500:$4.9951
  • 100:$5.7363
  • 10:$6.9290
  • 1:$7.6700
IAUT300N10S5N015ATMA1
DISTI # IAUT300N10S5N015ATMA1TR-ND		Infineon Technologies AGMOSFET_(75V,120V(
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		On Order
  • 2000:$4.0674
IAUT300N10S5N015ATMA1
DISTI # 30281418		Infineon Technologies AGOptiMOS -5 Power-Transistor4000
  • 20000:$3.6531
  • 12000:$3.7521
  • 8000:$3.8511
  • 4000:$4.0491
  • 2000:$4.1481
IAUT300N10S5N015ATMA1
DISTI # 32062256		Infineon Technologies AGOptiMOS -5 Power-Transistor306
  • 2:$7.7418
IAUT300N10S5N015ATMA1
DISTI # IAUT300N10S5N015ATMA1		Infineon Technologies AGOptiMOS-5 Power Transistor MOSFET N-Channel 100V 300A 8-Pin PG-HSOF-1 T/R - Tape and Reel (Alt: IAUT300N10S5N015ATMA1)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 20000:$3.6900
  • 12000:$3.7900
  • 8000:$3.8900
  • 4000:$4.0900
  • 2000:$4.1900
IAUT300N10S5N015ATMA1
DISTI # 59AC7037		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, HSOF,Transistor Polarity:N Channel,Continuous Drain Current Id:300A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0013ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes1662
  • 1000:$4.4700
  • 500:$5.1300
  • 250:$5.6200
  • 100:$5.8900
  • 50:$6.3400
  • 25:$6.7800
  • 10:$7.1100
  • 1:$7.8700
IAUT300N10S5N015ATMA1
DISTI # 726-IAUT300N10S5N015		Infineon Technologies AGMOSFET MOSFET_(75V,120V(
RoHS: Compliant		7790
  • 1:$7.0800
  • 10:$6.4000
  • 25:$6.1000
  • 100:$5.3000
  • 250:$5.0600
  • 500:$4.6100
  • 1000:$4.0200
  • 2000:$3.8700
IAUT300N10S5N015ATMA1
DISTI # 2888482		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, HSOF
RoHS: Compliant		1562
  • 1000:$6.0900
  • 500:$6.2100
  • 250:$6.5500
  • 100:$6.9300
  • 10:$7.8300
  • 1:$8.3900
IAUT300N10S5N015ATMA1
DISTI # XSKDRABV0021068		Infineon Technologies AG 
RoHS: Compliant		3900 in Stock0 on Order
  • 3900:$5.3300
  • 2000:$5.7100
IAUT300N10S5N015ATMA1
DISTI # 2888482		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, HSOF1323
  • 100:£4.1300
  • 50:£4.4400
  • 10:£4.7500
  • 5:£5.5100
  • 1:£6.0400
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OMO.#: OMO-AD8418ABRMZ-RL-ANALOG-DEVICES-INC-ADI

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 MOSFET_(75V,120V(
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1989
Menge eingeben:
Der aktuelle Preis von IAUT300N10S5N015ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
7,08 $
7,08 $
10
6,40 $
64,00 $
25
6,10 $
152,50 $
100
5,30 $
530,00 $
250
5,06 $
1 265,00 $
500
4,61 $
2 305,00 $
1000
4,02 $
4 020,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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