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DMNH10H028SK3Q-13

DMNH10H028SK3Q-13
Mfr. #:
DMNH10H028SK3Q-13
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET 100V 175c N-Ch FET 28mOhm 10V 55A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DMNH10H028SK3Q-13 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
DMNH10H028SK3Q-13 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
55 A
Rds On - Drain-Source-Widerstand:
28 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
36 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
2 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Verpackung:
Spule
Serie:
DMNH10H028
Transistortyp:
1 N-Channel
Marke:
Eingebaute Dioden
Abfallzeit:
4.8 ns
Produktart:
MOSFET
Anstiegszeit:
5.8 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
17.8 ns
Typische Einschaltverzögerungszeit:
6.4 ns
Gewichtseinheit:
0.139332 oz
Tags
DMNH10H028S, DMNH1, DMNH, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 55A Automotive 3-Pin(2+Tab) DPAK T/R
***ure Electronics
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***des Inc SCT
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MOSFET, N CH, 100V, 59A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Source Voltage Vds:100V; On Resistance
*** Stop Electro
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***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO252-3, RoHS
***nell
MOSFET, N CH, 100V, 59A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 59A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0105ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 94W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ineon SCT
100V, N-Ch, 12.2 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS
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***ineon
Summary of Features: N-channel - Normal Level - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested
***itex
Transistor: N-MOSFET; unipolar; 75V; 42A; 0.026ohm; 110W; -55+175 deg.C; SMD; TO252(DPAK)
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Single N-Channel 75V 26 mOhm 74 nC HEXFET® Power Mosfet - DPAK
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75V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***icontronic
Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET, N, 75V, 42A, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 42A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Diss
***ure Electronics
STD47N10F7AG Series 100V 18 mOhm 45 A N-Channel STripFET™ F7 Power Mosfet-DPAK-3
***icroelectronics
Automotive-grade N-channel 100 V, 0.0125 Ohm typ., 45 A STripFET F7 Power MOSFET in DPAK package
***ical
Trans MOSFET N-CH 100V 45A Automotive 3-Pin(2+Tab) DPAK T/R
***ment14 APAC
DPAK/AUTOMOTIVE-GRADE N-CHANNEL 100 V; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Source Voltage Vds:100V; On Resistance
***nell
DPAK/AUTOMOTIVE-GRADE N-CHANNEL 100 V; Transistor Polarity: N Channel; Continuous Drain Current Id: 45A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017)
***emi
N-Channel MOSFET, UltraFET® Trench, 100V, 44A, 28mΩ
***Yang
Trans MOSFET N-CH 100V 44A Automotive 3-Pin(2+Tab) DPAK T/R
***hard Electronics
100V, 44A, 24mΩ, DPAK N-Channel UltraFET® Trench, TO-252 3L (DPAK), 5000-TAPE REEL
*** Stop Electro
Power Field-Effect Transistor, 44A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
*** International
FDD3672_F085 Fairchild/ON Semiconductor
***ical
Trans MOSFET N-CH 100V 70A Automotive 3-Pin(2+Tab) DPAK T/R
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N-Channel 100 V 0.010 Ohm Surface Mount STripFET™ F7 Power Mosfet - DPAK-3
***icroelectronics
Automotive-grade N-channel 100 V, 0.0085 Ohm typ., 70 A STripFET F7 Power MOSFET in a DPAK package
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MOSFET, AECQ101, N-CH, 100V, 70A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Source Voltage Vds:100V; On
***r Electronics
Power Field-Effect Transistor, 70A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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MOSFET, AECQ101, N-CH, 100V, 70A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 85W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET F7 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Automotive MOSFETs
Diodes Incorporated Automotive MOSFETs meet the stringent requirements of the AEC-Q101 reliability standard of the Automotive Electronics Council. Products with a 'Q' suffix indicate that the product is Automotive grade. This means the device has passed the rigorous AEC-Q101 standard and is fully supported for Automotive applications. The MOSFETs support customers with the PPAP (Production Part Approval Process), and TS16949 approved manufacturing sites.
Teil # Mfg. Beschreibung Aktie Preis
DMNH10H028SK3Q-13
DISTI # V72:2272_13884679		Zetex / Diodes IncTrans MOSFET N-CH 100V 55A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		622
  • 500:$0.9296
  • 250:$1.0712
  • 100:$1.0822
  • 25:$1.3636
  • 10:$1.3773
  • 1:$1.7998
DMNH10H028SK3Q-13
DISTI # V36:1790_13884679		Zetex / Diodes IncTrans MOSFET N-CH 100V 55A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
  • 2500000:$0.6787
  • 1250000:$0.6790
  • 250000:$0.7041
  • 25000:$0.7486
  • 2500:$0.7560
DMNH10H028SK3Q-13
DISTI # DMNH10H028SK3Q-13DICT-ND		Diodes IncorporatedMOSFET N-CH 100V 55A TO252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    DMNH10H028SK3Q-13
    DISTI # DMNH10H028SK3Q-13DIDKR-ND    		Diodes IncorporatedMOSFET N-CH 100V 55A TO252
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      DMNH10H028SK3Q-13
      DISTI # DMNH10H028SK3Q-13DITR-ND      		Diodes IncorporatedMOSFET N-CH 100V 55A TO252
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 2500:$0.7560
      DMNH10H028SK3Q-13
      DISTI # 25804508      		Zetex / Diodes IncTrans MOSFET N-CH 100V 55A Automotive 3-Pin(2+Tab) DPAK T/R
      RoHS: Compliant      		622
      • 9:$1.7998
      DMNH10H028SK3Q-13
      DISTI # DMNH10H028SK3Q-13      		Diodes IncorporatedMOSFET BVDSS: 61V~100V TO252 T&R 2.5K - Tape and Reel (Alt: DMNH10H028SK3Q-13)
      RoHS: Compliant
      Min Qty: 2500
      Container: Reel      		Americas - 0
      • 25000:$0.7149
      • 15000:$0.7309
      • 10000:$0.7659
      • 5000:$0.8029
      • 2500:$0.8439
      DMNH10H028SK3Q-13
      DISTI # 621-DMNH10H028SK3Q13      		Diodes IncorporatedMOSFET 100V 175c N-Ch FET 28mOhm 10V 55A
      RoHS: Compliant      		1681
      • 1:$1.6500
      • 10:$1.4000
      • 100:$1.1200
      • 500:$0.9810
      • 1000:$0.8120
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1984
      Menge eingeben:
      Der aktuelle Preis von DMNH10H028SK3Q-13 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,65 $
      1,65 $
      10
      1,40 $
      14,00 $
      100
      1,12 $
      112,00 $
      500
      0,98 $
      490,50 $
      1000
      0,81 $
      812,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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