We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| NE3512S02-A DISTI # C1S620200378815 | Renesas Electronics Corporation | Trans JFET N-CH 4V 70mA HJFET 4-Pin Case S-02 RoHS: Compliant | 8 |
|
| NE3512S02-A DISTI # NE3512S02-A-ND | California Eastern Laboratories (CEL) | HJ-FET NCH 13.5DB S02 RoHS: Compliant Min Qty: 90 Container: Bulk | Limited Supply - Call | |
| NE3512S02-T1C-A DISTI # NE3512S02-T1C-ATR-ND | California Eastern Laboratories (CEL) | HJ-FET NCH 13.5DB S02 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| NE3512S02-T1C-A DISTI # NE3512S02-T1C-ACT-ND | California Eastern Laboratories (CEL) | HJ-FET NCH 13.5DB S02 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| NE3512S02-T1C-A DISTI # NE3512S02-T1C-ADKR-ND | California Eastern Laboratories (CEL) | HJ-FET NCH 13.5DB S02 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| NE3512S02-T1D-A DISTI # NE3512S02-T1D-A | Renesas Electronics Corporation | - Bulk (Alt: NE3512S02-T1D-A) Min Qty: 556 Container: Bulk | Americas - 0 |
|
| NE3512S02-T1D-A DISTI # 551-NE3512S02-T1D-A | California Eastern Laboratories (CEL) | RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET RoHS: Compliant | 0 | |
| NE3512S02-A DISTI # 551-NE3512S02-A | California Eastern Laboratories (CEL) | RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch RoHS: Compliant | 0 | |
| NE3512S02-T1C-A DISTI # 551-NE3512S02-T1C-A | California Eastern Laboratories (CEL) | RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET RoHS: Compliant | 0 | |
| NE3512S02-T1C-A | Renesas Electronics Corporation | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET RoHS: Compliant | 6000 |
|
| NE3512S02-T1D-A | Renesas Electronics Corporation | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET RoHS: Compliant | 20000 |
|
| NE3512S02-A DISTI # NE3512S02-A | Renesas Electronics Corporation | RF SMALL SIGNAL TRANSISTOR HFET | 0 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: NE3503M04-T2-A OMO.#: OMO-NE3503M04-T2-A-CEL |
Neu und Original |
|
Mfr.#: NE3515S02-A OMO.#: OMO-NE3515S02-A-CEL |
RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH |
|
|
Mfr.#: NE3515S02-T1C-A OMO.#: OMO-NE3515S02-T1C-A-CEL |
RF JFET Transistors Super Low Noise Pseudomorphic |
|
|
Mfr.#: NE3512S02-T1C-A OMO.#: OMO-NE3512S02-T1C-A-CEL |
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET |
|
Mfr.#: NE3503M04 OMO.#: OMO-NE3503M04-1190 |
Neu und Original |
|
|
Mfr.#: NE3505M04-T2 , EM-0711 |
Neu und Original |
|
|
Mfr.#: NE3508M04-T1-A OMO.#: OMO-NE3508M04-T1-A-1190 |
Neu und Original |
|
|
Mfr.#: NE3508M04T2A OMO.#: OMO-NE3508M04T2A-1190 |
Neu und Original |
|
|
Mfr.#: NE3509M04-EVNF24-A OMO.#: OMO-NE3509M04-EVNF24-A-CEL |
EVAL DEV RF NE3509M04 |
|
|
Mfr.#: NE3510M04 OMO.#: OMO-NE3510M04-1190 |
Neu und Original |