HUF75329D3ST

HUF75329D3ST
Mfr. #:
HUF75329D3ST
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 20a 55V N-Channel UltraFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HUF75329D3ST Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
55 V
Id - Kontinuierlicher Drainstrom:
20 A
Rds On - Drain-Source-Widerstand:
26 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
128 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
2.39 mm
Länge:
6.73 mm
Serie:
HUF75329D3S
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
6.22 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
33 ns
Produktart:
MOSFET
Anstiegszeit:
30 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
10 ns
Typische Einschaltverzögerungszeit:
7 ns
Teil # Aliase:
HUF75329D3ST_NL
Gewichtseinheit:
0.009184 oz
Tags
HUF75329D3ST, HUF75329D3S, HUF75329D3, HUF75329D, HUF75329, HUF7532, HUF753, HUF75, HUF7, HUF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 10, N-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK ON Semiconductor HUF75329D3ST
***ment14 APAC
Prices include import duty and tax. MOSFET TRANSISTOR;
***Semiconductor
N-Channel UltraFET Power MOSFET 55V, 20A, 26mΩ
***ure Electronics
N-Channel 20 A 55 V 0.026 Ohm SMT UltraFET Mosfet- TO-252-3
***p One Stop Global
Trans MOSFET N-CH 55V 20A 3-Pin(2+Tab) TO-252AA T/R
***ical
Trans MOSFET N-CH 55V 20A 3-Pin(2+Tab) DPAK T/R
***i-Key
MOSFET N-CH 55V 20A DPAK
***ser
MOSFETs 20a, 55V N-Channel UltraFET
***et
TAPE AND REEL HUF75329D3S
***nell
MOSFET TRANSISTOR
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V; Power Dissipation Pd:128W ;RoHS Compliant: Yes
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75329.
Teil # Mfg. Beschreibung Aktie Preis
HUF75329D3ST
DISTI # HUF75329D3STFSCT-ND
ON SemiconductorMOSFET N-CH 55V 20A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1089In Stock
  • 1000:$0.5941
  • 500:$0.7526
  • 100:$0.9704
  • 10:$1.2280
  • 1:$1.3900
HUF75329D3ST
DISTI # HUF75329D3STFSDKR-ND
ON SemiconductorMOSFET N-CH 55V 20A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1089In Stock
  • 1000:$0.5941
  • 500:$0.7526
  • 100:$0.9704
  • 10:$1.2280
  • 1:$1.3900
HUF75329D3ST
DISTI # HUF75329D3STFSTR-ND
ON SemiconductorMOSFET N-CH 55V 20A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.5384
HUF75329D3ST
DISTI # 31043693
ON SemiconductorTrans MOSFET N-CH Si 55V 20A 3-Pin(2+Tab) DPAK T/R2500
  • 2500:$0.4920
HUF75329D3ST
DISTI # HUF75329D3ST
ON SemiconductorTrans MOSFET N-CH 55V 20A 3-Pin(2+Tab) TO-252AA T/R (Alt: HUF75329D3ST)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 182152
  • 2500:€0.4499
  • 5000:€0.3679
  • 10000:€0.3369
  • 15000:€0.3109
  • 25000:€0.2889
HUF75329D3ST
DISTI # HUF75329D3ST
ON SemiconductorTrans MOSFET N-CH 55V 20A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: HUF75329D3ST)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.5959
  • 5000:$0.5919
  • 10000:$0.5839
  • 15000:$0.5769
  • 25000:$0.5619
HUF75329D3ST
DISTI # 05B7196
ON SemiconductorMOSFET Transistor,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:55V,On Resistance Rds(on):22mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs Typ:4V,Power Dissipation Pd:128W RoHS Compliant: Yes0
  • 25000:$0.4580
  • 10000:$0.4720
  • 2500:$0.4900
  • 1:$0.4930
HUF75329D3ST
DISTI # 81R3933
ON SemiconductorMOSFET Transistor,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:128W RoHS Compliant: Yes0
  • 1000:$0.5600
  • 500:$0.7000
  • 250:$0.7440
  • 100:$0.7870
  • 50:$0.8630
  • 25:$0.9380
  • 10:$1.0100
  • 1:$1.1900
HUF75329D3STFairchild Semiconductor Corporation 
RoHS: Not Compliant
63553
  • 1000:$0.6700
  • 500:$0.7100
  • 100:$0.7400
  • 25:$0.7700
  • 1:$0.8300
HUF75329D3ST
DISTI # 512-HUF75329D3ST
ON SemiconductorMOSFET 20a 55V N-Channel UltraFET
RoHS: Compliant
2750
  • 1:$1.1500
  • 10:$0.9790
  • 100:$0.7520
  • 500:$0.6650
  • 1000:$0.5250
HUF75329D3STFairchild Semiconductor Corporation 2379
    HUF75329D3STFairchild Semiconductor Corporation 2286
      HUF75329D3STFairchild Semiconductor CorporationINSTOCK12562
        HUF75329D3ST $ .38 EAHarris Semiconductor 2814
          HUF75329D3STSHarris Semiconductor 2695
            HUF75329D3ST.
            DISTI # 1857262
            ON SemiconductorMOSFET TRANSISTOR
            RoHS: Compliant
            0
            • 2500:£0.4800
            HUF75329D3ST.
            DISTI # 1857262
            ON SemiconductorUnspecified
            RoHS: Compliant
            0
            • 2500:$0.8150
            • 1000:$0.8310
            • 500:$1.0500
            • 100:$1.1900
            • 10:$1.5600
            • 1:$1.8200
            HUF75329D3ST
            DISTI # HUF75329D3ST
            Harris SemiconductorPower Field-Effect Transistor, 20AI(D),55V,0.026ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,TO-252AA
            RoHS: Compliant
            5000
              HUF75329D3ST
              DISTI # XSKDRABV0021052
              ON SEMICONDUCTOR 
              RoHS: Compliant
              147152
              • 147152:$0.4387
              • 2500:$0.4700
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              Verfügbarkeit
              Aktie:
              Available
              Auf Bestellung:
              1985
              Menge eingeben:
              Der aktuelle Preis von HUF75329D3ST dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
              Referenzpreis (USD)
              Menge
              Stückpreis
              ext. Preis
              1
              1,25 $
              1,25 $
              10
              1,06 $
              10,60 $
              100
              0,82 $
              82,00 $
              500
              0,72 $
              362,50 $
              1000
              0,57 $
              572,00 $
              Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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