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IXTQ170N10P

IXTQ170N10P
Mfr. #:
IXTQ170N10P
Hersteller:
Littelfuse
Beschreibung:
MOSFET 170 Amps 100V 0.009 Ohm Rds
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTQ170N10P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTQ170N10P DatasheetIXTQ170N10P Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-3P-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
170 A
Rds On - Drain-Source-Widerstand:
9 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
714 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
20.3 mm
Länge:
15.8 mm
Serie:
IXTQ170N10
Transistortyp:
1 N-Channel
Breite:
4.9 mm
Marke:
IXYS
Abfallzeit:
33 ns
Produktart:
MOSFET
Anstiegszeit:
50 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
90 ns
Typische Einschaltverzögerungszeit:
35 ns
Gewichtseinheit:
0.194007 oz
Tags
IXTQ1, IXTQ, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop
Trans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-3P
***ark
MOSFET, N, TO-3P; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:170A; Resistance, Rds On:0.009ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-3P; Termination ;RoHS Compliant: Yes
***nell
MOSFET, N, TO-3P; Transistor Polarity: N Channel; Continuous Drain Current Id: 170A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 15V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 714W; Transistor Case Style: TO-3P; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (12-Jan-2017); Capacitance Ciss Typ: 6000pF; Current Id Max: 170A; Junction to Case Thermal Resistance A: 0.21°C/W; N-channel Gate Charge: 198nC; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Reverse Recovery Time trr Max: 120ns; Termination Type: Through Hole; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 5.6 Milliohms;ID 130A;TO-220AB;PD 300W
***ure Electronics
Single N-Channel 100 V 7 mOhm 250 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 100V 130A 3-Pin(3+Tab) TO-220AB - Rail/Tube
*** Stop Electro
Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ark
N Channel Mosfet, 100V, 130A, To-220Ab; Channel Type:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:130A; Transistor Mounting:through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:140A; On Resistance, Rds(on):7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***ark
Mosfet Transistor, N Channel, 180 A, 100 V, 0.0025 Ohm, 15 V, 4 V
***ical
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220 Tube
***emi
Power MOSFET, 100V, 3.0mΩ, 180A, N-Channel
***nell
MOSFET, N-CH, 100V, 180A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 15V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 200W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)
***icroelectronics
N-CHANNEL 75V - 0.0065 OHM -120A TO-220 STripFET II MOSFET
***ure Electronics
N-Channel 75 V 7.5 mO Flange Mount STripFET™III Power MosFet - TO-220
***ical
Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB Tube
***(Formerly Allied Electronics)
MOSFET N-Ch 75V 120A UltraFET III TO220
***nell
MOSFET, N CH, 75V, 120A, TO220; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 120A I(D), 75V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 0.0078Ohm;ID 130A;TO-220AB;PD 330W;VGS +/-20
***ure Electronics
Single N-Channel 75 V 7.8 mOhm 160 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***eco
MOSFET, 75V, 130A, 7.8 MOHM, 160 NC QG, TO-220AB
***Yang
Trans MOSFET N-CH 80V 130A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***ment14 APAC
MOSFET, N, 75V, 130A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:130A; Junction to Case Thermal Resistance A:0.45°C/W; On State resistance @ Vgs = 10V:7.8ohm; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:520A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***icroelectronics
N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package
*** Source Electronics
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N CH 100V 180A TO-220
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; On Resistance Rds(On):0.0023Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Msl:- Rohs Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Teil # Mfg. Beschreibung Aktie Preis
IXTQ170N10P
DISTI # V36:1790_15876307		IXYS CorporationTrans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-3P
RoHS: Compliant		20
  • 2500:$4.0480
  • 1000:$4.7080
  • 500:$4.9660
  • 250:$5.4580
  • 100:$5.9860
  • 50:$6.1730
  • 25:$6.6620
  • 10:$7.9230
  • 1:$8.7760
IXTQ170N10P
DISTI # IXTQ170N10P-ND		IXYS CorporationMOSFET N-CH 100V 170A TO-3P
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$6.8677
IXTQ170N10P
DISTI # 32022822		IXYS CorporationTrans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-3P
RoHS: Compliant		20
  • 2500:$4.0480
  • 1000:$4.7080
  • 500:$4.9660
  • 250:$5.4580
  • 100:$5.9860
  • 50:$6.1730
  • 25:$6.6620
  • 10:$7.9230
  • 2:$8.7760
IXTQ170N10P
DISTI # 31673116		IXYS CorporationTrans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-3P
RoHS: Compliant		10
  • 2500:$4.2816
  • 1000:$4.9920
  • 500:$5.2320
  • 250:$5.7408
  • 100:$6.2880
  • 50:$6.4320
  • 25:$6.9216
  • 10:$8.3232
  • 3:$9.2448
IXTQ170N10P
DISTI # 747-IXTQ170N10P		IXYS CorporationMOSFET 170 Amps 100V 0.009 Ohm Rds
RoHS: Compliant		730
  • 1:$9.6300
  • 10:$8.6700
  • 25:$6.8600
  • 50:$6.7000
  • 100:$6.5500
  • 250:$5.9800
  • 500:$5.4500
  • 1000:$5.2000
IXTQ170N10P
DISTI # IXTQ170N10P		IXYS CorporationTransistor: N-MOSFET,Polar™,unipolar,100V,170A,715W,TO3P26
  • 1:$7.1300
  • 3:$6.4200
  • 10:$5.6700
  • 30:$5.0900
IXTQ170N10P
DISTI # 1427383		IXYS CorporationMOSFET, N, TO-3P
RoHS: Compliant		0
  • 1000:$7.8400
  • 500:$8.2100
  • 250:$9.0100
  • 100:$9.8700
  • 50:$10.1000
  • 25:$10.3400
  • 10:$13.0700
  • 1:$14.5100
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Verfügbarkeit
Aktie:
679
Auf Bestellung:
2662
Menge eingeben:
Der aktuelle Preis von IXTQ170N10P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
9,63 $
9,63 $
10
8,67 $
86,70 $
25
6,86 $
171,50 $
50
6,70 $
335,00 $
100
6,55 $
655,00 $
250
5,98 $
1 495,00 $
500
5,45 $
2 725,00 $
1000
5,20 $
5 200,00 $
2500
4,46 $
11 150,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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