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IRFR3708TRLPBF

IRFR3708TRLPBF
Mfr. #:
IRFR3708TRLPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 30V 61A DPAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFR3708TRLPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRFR3708TRLPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Internationaler Gleichrichter
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
87 W
Vgs-Gate-Source-Spannung
12 V
ID-Dauer-Drain-Strom
61 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Widerstand
14 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
24 nC
Tags
IRFR3708T, IRFR3708, IRFR370, IRFR37, IRFR3, IRFR, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRFR3708TRLPBF
DISTI # 29497858		Infineon Technologies AGTrans MOSFET N-CH 30V 61A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		3000
  • 3000:$0.5760
IRFR3708TRLPBF
DISTI # IRFR3708TRLPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 61A DPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.6160
IRFR3708TRLPBF
DISTI # C1S322000697188		Infineon Technologies AGMOSFETs
RoHS: Compliant		3000
  • 3000:$0.4370
IRFR3708TRLPBF
DISTI # IRFR3708TRLPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 61A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR3708TRLPBF)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.4609
  • 6000:$0.4439
  • 12000:$0.4279
  • 18000:$0.4129
  • 30000:$0.4059
IRFR3708TRLPBF
DISTI # 32AC7465		Infineon Technologies AGMOSFET, N-CH, 30V, 61A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:61A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation RoHS Compliant: Yes2057
  • 1:$1.3200
  • 10:$1.1200
  • 25:$1.0300
  • 50:$0.9470
  • 100:$0.8610
  • 250:$0.8110
  • 500:$0.7610
  • 1000:$0.6000
IRFR3708TRLPBF
DISTI # 70017764		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 8.5 Milliohms,ID 61A,D-Pak (TO-252AA),PD 87W
RoHS: Compliant		0
  • 3000:$1.5600
  • 6000:$1.5290
  • 15000:$1.4820
  • 30000:$1.4200
  • 75000:$1.3260
IRFR3708TRLPBF
DISTI # 942-IRFR3708TRLPBF		Infineon Technologies AGMOSFET MOSFT 30V 61A 12.5mOhm 24nC
RoHS: Compliant		3000
  • 1:$1.3200
  • 10:$1.1200
  • 100:$0.8610
  • 500:$0.7610
  • 1000:$0.6000
IRFR3708TRLPBF
DISTI # 2777390		Infineon Technologies AGMOSFET, N-CH, 30V, 61A, TO-252
RoHS: Compliant		2107
  • 5:£1.2200
  • 25:£1.1000
  • 100:£0.8500
IRFR3708TRLPBF
DISTI # 2777390		Infineon Technologies AGMOSFET, N-CH, 30V, 61A, TO-252
RoHS: Compliant		2057
  • 5:$1.6000
  • 25:$1.3900
  • 100:$1.1400
Bild Teil # Beschreibung
IRFR3709ZTRRPBF

Mfr.#: IRFR3709ZTRRPBF

OMO.#: OMO-IRFR3709ZTRRPBF

 MOSFET 30V 1 N-CH HEXFET 6.5mOhms 17nC
IRFR3708TRRPBF

Mfr.#: IRFR3708TRRPBF

OMO.#: OMO-IRFR3708TRRPBF

 MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC
IRFR3707TRLPBF

Mfr.#: IRFR3707TRLPBF

OMO.#: OMO-IRFR3707TRLPBF

 MOSFET MOSFT 30V 61A 13mOhm 19nC
IRFR3707TRR

Mfr.#: IRFR3707TRR

OMO.#: OMO-IRFR3707TRR-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 61A DPAK
IRFR3708TR

Mfr.#: IRFR3708TR

OMO.#: OMO-IRFR3708TR-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 61A DPAK
IRFR3706CTRLPBF

Mfr.#: IRFR3706CTRLPBF

OMO.#: OMO-IRFR3706CTRLPBF-INFINEON-TECHNOLOGIES

 MOSFET N-CH 20V 75A DPAK
IRFR3707ZCTRLP

Mfr.#: IRFR3707ZCTRLP

OMO.#: OMO-IRFR3707ZCTRLP-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 56A DPAK
IRFR3706TRLPBF

Mfr.#: IRFR3706TRLPBF

OMO.#: OMO-IRFR3706TRLPBF-INFINEON-TECHNOLOGIES

 IGBT Transistors MOSFET MOSFT 20V 75A 9mOhm 23nC
IRFR3708TRRPBF

Mfr.#: IRFR3708TRRPBF

OMO.#: OMO-IRFR3708TRRPBF-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC
IRFR3709ZTRRPBF

Mfr.#: IRFR3709ZTRRPBF

OMO.#: OMO-IRFR3709ZTRRPBF-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 6.5mOhms 17nC
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von IRFR3708TRLPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,61 $
0,61 $
10
0,58 $
5,78 $
100
0,55 $
54,80 $
500
0,52 $
258,75 $
1000
0,49 $
487,10 $
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