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FDG311N

FDG311N
Mfr. #:
FDG311N
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET N-CH 20V 1.9A SC70-6
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDG311N Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
FAIRCHILD
Produktkategorie
FETs - Einzeln
Verpackung
Spule
Teil-Aliasnamen
FDG311N_NL
Gewichtseinheit
0.000988 oz
Montageart
SMD/SMT
Paket-Koffer
SC-70-6
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single Quad Drain
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
750 mW
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
9 ns
Anstiegszeit
9 ns
Vgs-Gate-Source-Spannung
8 V
ID-Dauer-Drain-Strom
1.9 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Rds-On-Drain-Source-Widerstand
115 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
10 ns
Typische-Einschaltverzögerungszeit
5 ns
Vorwärts-Transkonduktanz-Min
6 S
Kanal-Modus
Erweiterung
Tags
FDG311N, FDG311, FDG31, FDG3, FDG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel PowerTrench® MOSFET, 2.5V Specified, 1.9 A, 115 mΩ
***et Europe
Trans MOSFET N-CH 20V 1.9A 6-Pin SC-70 T/R
***ark
20V N-Fet 130 Mo To220 Rohs Compliant: Yes
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
Teil # Mfg. Beschreibung Aktie Preis
FDG311N
DISTI # V36:1790_06300670		ON SemiconductorFDG311N3000
  • 30000:$0.1115
  • 15000:$0.1162
  • 6000:$0.1291
  • 3000:$0.1434
FDG311N
DISTI # V72:2272_06300670		ON SemiconductorFDG311N677
  • 500:$0.1755
  • 250:$0.1949
  • 100:$0.2166
  • 25:$0.3516
  • 10:$0.3908
  • 1:$0.4702
FDG311N
DISTI # FDG311NCT-ND		ON SemiconductorMOSFET N-CH 20V 1.9A SC70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7492In Stock
  • 1000:$0.1903
  • 500:$0.2463
  • 100:$0.3134
  • 10:$0.4200
  • 1:$0.4900
FDG311N
DISTI # FDG311NDKR-ND		ON SemiconductorMOSFET N-CH 20V 1.9A SC70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7492In Stock
  • 1000:$0.1903
  • 500:$0.2463
  • 100:$0.3134
  • 10:$0.4200
  • 1:$0.4900
FDG311N
DISTI # FDG311NTR-ND		ON SemiconductorMOSFET N-CH 20V 1.9A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 30000:$0.1391
  • 15000:$0.1467
  • 6000:$0.1576
  • 3000:$0.1684
FDG311N
DISTI # 26620175		ON SemiconductorFDG311N21000
  • 3000:$0.1434
FDG311N
DISTI # 25743388		ON SemiconductorFDG311N677
  • 56:$0.4702
FDG311N
DISTI # FDG311N		ON SemiconductorTrans MOSFET N-CH 20V 1.9A 6-Pin SC-70 T/R (Alt: FDG311N)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1109
  • 18000:€0.1199
  • 12000:€0.1419
  • 6000:€0.1739
  • 3000:€0.2229
FDG311N
DISTI # FDG311N		ON SemiconductorTrans MOSFET N-CH 20V 1.9A 6-Pin SC-70 T/R - Tape and Reel (Alt: FDG311N)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.2339
  • 18000:$0.2399
  • 12000:$0.2429
  • 6000:$0.2459
  • 3000:$0.2479
FDG311N
DISTI # FDG311N		ON SemiconductorTrans MOSFET N-CH 20V 1.9A 6-Pin SC-70 T/R (Alt: FDG311N)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel		Asia - 0
  • 300000:$0.1475
  • 150000:$0.1500
  • 60000:$0.1552
  • 30000:$0.1607
  • 18000:$0.1667
  • 12000:$0.1731
  • 6000:$0.1800
FDG311N
DISTI # FDG311N		ON SemiconductorTrans MOSFET N-CH 20V 1.9A 6-Pin SC-70 T/R - Bulk (Alt: FDG311N)
RoHS: Compliant
Min Qty: 1667
Container: Bulk		Americas - 0
  • 16670:$0.1849
  • 8335:$0.1889
  • 5001:$0.1919
  • 3334:$0.1939
  • 1667:$0.1959
FDG311N
DISTI # 58K8833		ON SemiconductorN CHANNEL MOSFET, 20V, 1.9A, SC-70,Transistor Polarity:N Channel,Continuous Drain Current Id:1.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.115ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:900mV RoHS Compliant: Yes0
  • 1000:$0.1820
  • 500:$0.1990
  • 250:$0.2170
  • 100:$0.2340
  • 50:$0.3070
  • 25:$0.3800
  • 1:$0.4660
FDG311N.
DISTI # 29AC6255		Fairchild Semiconductor Corporation20V N-FET 130 MO TO220 ROHS COMPLIANT: YES0
  • 30000:$0.1660
  • 18000:$0.1700
  • 12000:$0.1730
  • 6000:$0.1750
  • 1:$0.1760
FDG311N
DISTI # 512-FDG311N		ON SemiconductorMOSFET SC70-6 N-CH 20V
RoHS: Compliant		9130
  • 1:$0.4500
  • 10:$0.3740
  • 100:$0.2280
  • 1000:$0.1760
  • 3000:$0.1510
  • 9000:$0.1400
  • 24000:$0.1330
  • 45000:$0.1300
FDG311N_Q
DISTI # 512-FDG311N_Q		ON SemiconductorMOSFET SC70-6 N-CH 20V
RoHS: Not compliant		0
    FDG311NFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 1.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		295554
    • 1000:$0.2000
    • 500:$0.2100
    • 100:$0.2200
    • 25:$0.2300
    • 1:$0.2400
    FDG311NFairchild Semiconductor Corporation1900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET1538
    • 1171:$0.1330
    • 235:$0.1710
    • 1:$0.3800
    FDG311NFairchild Semiconductor Corporation1900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET718
    • 235:$0.1710
    • 36:$0.2138
    • 1:$0.3800
    FDG311N
    DISTI # 8063374P    		ON SemiconductorMOSFETFAIRCHILDFDG311N, RL1880
    • 500:£0.0970
    FDG311N
    DISTI # 3003818    		ON SemiconductorMOSFET, N-CH, 1.9A, 20V, SC-703000
    • 500:£0.1320
    • 250:£0.1520
    • 100:£0.1710
    • 25:£0.3010
    • 5:£0.3170
    FDG311N
    DISTI # 3003818    		ON SemiconductorMOSFET, N-CH, 1.9A, 20V, SC-70
    RoHS: Compliant    		3000
    • 1000:$0.2540
    • 500:$0.2820
    • 250:$0.3180
    • 100:$0.3620
    • 25:$0.4310
    • 5:$0.5100
    Bild Teil # Beschreibung
    FDG8850NZ

    Mfr.#: FDG8850NZ

    OMO.#: OMO-FDG8850NZ-ON-SEMICONDUCTOR

    		 MOSFET 2N-CH 30V 0.75A SC70-6
    FDG318P

    Mfr.#: FDG318P

    OMO.#: OMO-FDG318P-1190

    		 MOSFET DISC BY MFG 2/02
    FDG35010

    Mfr.#: FDG35010

    OMO.#: OMO-FDG35010-1190

    		 Neu und Original
    FDG6301Y

    Mfr.#: FDG6301Y

    OMO.#: OMO-FDG6301Y-1190

    		 Neu und Original
    FDG6316P , 1N5230BTR

    Mfr.#: FDG6316P , 1N5230BTR

    OMO.#: OMO-FDG6316P-1N5230BTR-1190

    		 Neu und Original
    FDG6320C_D87Z

    Mfr.#: FDG6320C_D87Z

    OMO.#: OMO-FDG6320C-D87Z-ON-SEMICONDUCTOR

    		 MOSFET N/P-CH 25V SC70-6
    FDG6324L-NL

    Mfr.#: FDG6324L-NL

    OMO.#: OMO-FDG6324L-NL-1190

    		 Neu und Original
    FDG6304P-CUT TAPE

    Mfr.#: FDG6304P-CUT TAPE

    OMO.#: OMO-FDG6304P-CUT-TAPE-1190

    		 Neu und Original
    FDG6303N_G

    Mfr.#: FDG6303N_G

    OMO.#: OMO-FDG6303N-G-ON-SEMICONDUCTOR

    		 INTEGRATED CIRCUIT
    FDG6301N_D87Z

    Mfr.#: FDG6301N_D87Z

    OMO.#: OMO-FDG6301N-D87Z-ON-SEMICONDUCTOR

    		 MOSFET 2N-CH 25V 0.22A SC70-6
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von FDG311N dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,15 $
    0,15 $
    10
    0,14 $
    1,42 $
    100
    0,14 $
    13,50 $
    500
    0,13 $
    63,75 $
    1000
    0,12 $
    120,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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