SIR606DP-T1-GE3

SIR606DP-T1-GE3
Mfr. #:
SIR606DP-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 100V Vds 20V Vgs PowerPAK SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIR606DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR606DP-T1-GE3 DatasheetSIR606DP-T1-GE3 Datasheet (P4-P6)SIR606DP-T1-GE3 Datasheet (P7-P9)SIR606DP-T1-GE3 Datasheet (P10-P12)SIR606DP-T1-GE3 Datasheet (P13)
ECAD Model:
Mehr Informationen:
SIR606DP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Höhe:
1.04 mm
Länge:
6.15 mm
Serie:
HERR
Breite:
5.15 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.017870 oz
Tags
SIR60, SIR6, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
N-Channel 100 V 16.2 mOhm 44.5 W TrenchFET Power Mosfet - PowerPAK SO-8
***ical
Trans MOSFET N-CH 100V 37A 8-Pin PowerPAK SO EP T/R
***ark
N-Channel 100-V (D-S) Mosfet
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SIR606DP-T1-GE3
DISTI # V72:2272_17580893
Vishay IntertechnologiesN-Channel 100 V (D-S) MOSFET5051
  • 3000:$0.5979
  • 1000:$0.6215
  • 500:$0.8261
  • 250:$0.9319
  • 100:$0.9415
  • 25:$1.2353
  • 10:$1.2479
  • 1:$1.6760
SIR606DP-T1-GE3
DISTI # V36:1790_17580893
Vishay IntertechnologiesN-Channel 100 V (D-S) MOSFET0
  • 6000000:$0.6020
  • 3000000:$0.6022
  • 600000:$0.6182
  • 60000:$0.6447
  • 6000:$0.6490
SIR606DP-T1-GE3
DISTI # SIR606DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 100V 37A POWERPAKSO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5997In Stock
  • 1000:$0.7162
  • 500:$0.9072
  • 100:$1.0982
  • 10:$1.4090
  • 1:$1.5800
SIR606DP-T1-GE3
DISTI # SIR606DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 100V 37A POWERPAKSO
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5997In Stock
  • 1000:$0.7162
  • 500:$0.9072
  • 100:$1.0982
  • 10:$1.4090
  • 1:$1.5800
SIR606DP-T1-GE3
DISTI # SIR606DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 100V 37A POWERPAKSO
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 15000:$0.5934
  • 6000:$0.6166
  • 3000:$0.6490
SIR606DP-T1-GE3
DISTI # 25817568
Vishay IntertechnologiesN-Channel 100 V (D-S) MOSFET5051
  • 11:$1.6760
SIR606DP-T1-GE3
DISTI # SIR606DP-T1-GE3
Vishay IntertechnologiesMOSFET N-Channel 100V 37A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR606DP-T1-GE3)
RoHS: Not Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 60000:$0.5659
  • 30000:$0.5809
  • 18000:$0.5979
  • 12000:$0.6229
  • 6000:$0.6419
SIR606DP-T1-GE3
DISTI # 20AC3885
Vishay IntertechnologiesN-CHANNEL 100-V (D-S) MOSFET0
  • 10000:$0.5610
  • 6000:$0.5740
  • 4000:$0.5960
  • 2000:$0.6630
  • 1000:$0.7290
  • 1:$0.7600
SIR606DP-T1-GE3
DISTI # 78-SIR606DP-T1-GE3
Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant
3949
  • 1:$1.5400
  • 10:$1.2700
  • 100:$0.9750
  • 500:$0.8380
  • 1000:$0.6620
  • 3000:$0.6180
  • 6000:$0.5870
  • 9000:$0.5740
Bild Teil # Beschreibung
P5DF081HNT1AD2060,

Mfr.#: P5DF081HNT1AD2060,

OMO.#: OMO-P5DF081HNT1AD2060-

RFID Transponders MIFARE SAM AV2
TJA1044GTK/3Z

Mfr.#: TJA1044GTK/3Z

OMO.#: OMO-TJA1044GTK-3Z

CAN Interface IC TJA1044GTK/HVSON8//3/REEL 13 Q1 NDP SSB
ZXTN2007GTA

Mfr.#: ZXTN2007GTA

OMO.#: OMO-ZXTN2007GTA

Bipolar Transistors - BJT 30V NPN Low Sat
AS4C256M16D3LB-12BIN

Mfr.#: AS4C256M16D3LB-12BIN

OMO.#: OMO-AS4C256M16D3LB-12BIN

DRAM 4G, 1.35V, 800Mhz 256M x 16 30nm DDR3
JD2-0001NL

Mfr.#: JD2-0001NL

OMO.#: OMO-JD2-0001NL

Modular Connectors / Ethernet Connectors 100Base-T NonPoE 1-Port RJ45 THT
EDH476M100A9PAA

Mfr.#: EDH476M100A9PAA

OMO.#: OMO-EDH476M100A9PAA

Aluminum Electrolytic Capacitors - SMD 100V 47uF 20%
BMD-340-A-R

Mfr.#: BMD-340-A-R

OMO.#: OMO-BMD-340-A-R

Bluetooth Modules (802.15.1) BMD-340-A-R with nRF52840 processor
PA4342.103NLT

Mfr.#: PA4342.103NLT

OMO.#: OMO-PA4342-103NLT-PULSE-ELECTRONICS

Inductor Power Shielded/Molded Wirewound 10uH 20% 100KHz 7.5A 30mOhm DCR 4040 Automotive T/R
AS4C256M16D3LB-12BIN

Mfr.#: AS4C256M16D3LB-12BIN

OMO.#: OMO-AS4C256M16D3LB-12BIN-ALLIANCE-MEMORY

IC DRAM 4G PARALLEL 96FBGA
JD2-0001NL

Mfr.#: JD2-0001NL

OMO.#: OMO-JD2-0001NL-PULSE-ELECTRONICS

CONN MAGJACK 1PORT 100 BASE-TX
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von SIR606DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,54 $
1,54 $
10
1,27 $
12,70 $
100
0,98 $
97,50 $
500
0,84 $
419,00 $
1000
0,66 $
662,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
  • -12 V and -20 V P-Channel Gen III MOSFETs
    Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
  • DG2788A Dual DPDT / Quad SPDT Analog Switch
    Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
  • Smart Load Switches
    Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
  • Compare SIR606DP-T1-GE3
    SIR604ADPT1E3 vs SIR604ADPT1GE3 vs SIR606BDPT1RE3
  • SUM70101EL 100 V P-Channel MOSFET
    Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
  • DGQ2788A AEC-Q100 Qualified Analog Switch
    The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
Top