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IPN95R2K0P7ATMA1

IPN95R2K0P7ATMA1
Mfr. #:
IPN95R2K0P7ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 950 V CoolMOS P7
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPN95R2K0P7ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPN95R2K0P7ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-223-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
950 V
Id - Kontinuierlicher Drainstrom:
4 A
Rds On - Drain-Source-Widerstand:
2 Ohms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
10 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
7 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Spule
Serie:
P7
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
18 ns
Produktart:
MOSFET
Anstiegszeit:
13 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
41 ns
Typische Einschaltverzögerungszeit:
6 ns
Teil # Aliase:
IPN95R2K0P7
Tags
IPN95, IPN9, IPN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
950V CoolMOS™ P7 SJ MOSFETs
Infineon Technologies 950V CoolMOS™ P7 SJ MOSFETs employs 950V super junction technology and combines best-in-class performance with state of the art ease-of-use. These MOSFETs come with an integrated Zener diode Electro Static Discharge (ESD) protection. The integrated diode improves ESD robustness that reduces ESD-related yield loss and provides exceptional ease-of-use levels. These MOSFETs offer 3V VGS(th) and narrow tolerance of only ±0.5V that makes it easy to drive and design-in. The 950V SJ MOSFETs provide low DPAK RDS(on) that enables higher density while decreasing BOM and assembly cost.
Teil # Mfg. Beschreibung Aktie Preis
IPN95R2K0P7ATMA1
DISTI # 32361393		Infineon Technologies AGLOW POWER_NEW3000
  • 15000:$0.3915
  • 6000:$0.4052
  • 3000:$0.4054
  • 1000:$0.4526
  • 500:$0.5606
  • 250:$0.6270
  • 100:$0.6281
  • 50:$0.7911
  • 25:$0.7930
  • 18:$0.7950
IPN95R2K0P7ATMA1
DISTI # IPN95R2K0P7ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 950V 4A SOT223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3321In Stock
  • 1000:$0.5483
  • 500:$0.6794
  • 100:$0.8597
  • 10:$1.0730
  • 1:$1.2100
IPN95R2K0P7ATMA1
DISTI # IPN95R2K0P7ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 950V 4A SOT223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3321In Stock
  • 1000:$0.5483
  • 500:$0.6794
  • 100:$0.8597
  • 10:$1.0730
  • 1:$1.2100
IPN95R2K0P7ATMA1
DISTI # IPN95R2K0P7ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 950V 4A SOT223
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 15000:$0.4623
  • 6000:$0.4782
  • 3000:$0.5005
IPN95R2K0P7ATMA1
DISTI # V72:2272_22601859		Infineon Technologies AGLOW POWER_NEW3000
  • 75000:$0.3531
  • 30000:$0.3532
  • 15000:$0.3642
  • 6000:$0.3769
  • 3000:$0.3771
  • 1000:$0.4210
  • 500:$0.5215
  • 250:$0.5833
  • 100:$0.5843
  • 50:$0.7359
  • 25:$0.7377
  • 10:$0.7395
  • 1:$0.8500
IPN95R2K0P7ATMA1
DISTI # IPN95R2K0P7ATMA1		Infineon Technologies AGTrans MOSFET N-CH 950V 4A 3-Pin SOT-223 T/R - Tape and Reel (Alt: IPN95R2K0P7ATMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.4159
  • 6000:$0.4009
  • 12000:$0.3869
  • 18000:$0.3739
  • 30000:$0.3669
IPN95R2K0P7ATMA1
DISTI # SP001821834		Infineon Technologies AGTrans MOSFET N-CH 950V 4A 3-Pin SOT-223 T/R (Alt: SP001821834)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.5349
  • 6000:€0.4379
  • 12000:€0.4009
  • 18000:€0.3699
  • 30000:€0.3439
IPN95R2K0P7ATMA1
DISTI # 71AC0394		Infineon Technologies AGMOSFET, 950V, 4A, 150DEG C, 7W,Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:950V,On Resistance Rds(on):1.71ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes375
  • 1000:$0.4340
  • 500:$0.5500
  • 250:$0.5870
  • 100:$0.6230
  • 50:$0.6850
  • 25:$0.7480
  • 10:$0.8100
  • 1:$0.9500
IPN95R2K0P7ATMA1
DISTI # 726-IPN95R2K0P7ATMA1		Infineon Technologies AGMOSFET 950 V CoolMOS P7
RoHS: Compliant		3393
  • 1:$0.9500
  • 10:$0.8100
  • 100:$0.6230
  • 500:$0.5500
  • 1000:$0.4340
  • 3000:$0.3850
  • 9000:$0.3710
IPN95R2K0P7ATMA1
DISTI # 2916133		Infineon Technologies AGMOSFET, 950V, 4A, 150DEG C, 7W
RoHS: Compliant		410
  • 500:£0.4970
  • 250:£0.5690
  • 100:£0.6410
  • 25:£0.8110
  • 5:£0.9000
IPN95R2K0P7ATMA1
DISTI # 2916133		Infineon Technologies AGMOSFET, 950V, 4A, 150DEG C, 7W
RoHS: Compliant		375
  • 5000:$0.6490
  • 1000:$0.6840
  • 500:$0.7240
  • 250:$0.8360
  • 100:$0.9900
  • 25:$1.2100
  • 5:$1.3900
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OMO.#: OMO-DGH106Q2R7-ILLINOIS-CAPACITOR

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von IPN95R2K0P7ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,95 $
0,95 $
10
0,81 $
8,10 $
100
0,62 $
62,30 $
500
0,55 $
275,00 $
1000
0,43 $
434,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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