SI2312BDS-T1-E3

Mfr. #:: SI2312BDS-T1-E3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET N-Channel 20V 3.9A
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI2312BDS-T1-E3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI2312BDS-T1-E3 Datasheet SI2312BDS-T1-E3 Datasheet (P4-P6)SI2312BDS-T1-E3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:: SI2312BDS-T1-E3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SOT-23-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 20 V

Id - Kontinuierlicher Drainstrom:: 5 A

Rds On - Drain-Source-Widerstand:: 31 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 450 mV

Vgs - Gate-Source-Spannung:: 4.5 V

Qg - Gate-Ladung:: 12 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 1.25 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: TrenchFET

Verpackung:: Spule

Höhe:: 1.45 mm

Länge:: 2.9 mm

Serie:: SI2

Transistortyp:: 1 N-Channel

Breite:: 1.6 mm

Marke:: Vishay / Siliconix

Vorwärtstranskonduktanz - Min:: 30 S

Abfallzeit:: 10 ns

Produktart:: MOSFET

Anstiegszeit:: 30 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 35 ns

Typische Einschaltverzögerungszeit:: 9 ns

Teil # Aliase:: SI2312BDS-E3

Gewichtseinheit:: 0.000282 oz

Tags: SI2312BDS-T, SI2312BDS, SI2312B, SI2312, SI231, SI23, SI2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2312BDS-T1-E3 Beschreibung

***ure Electronics: Single N-Channel 20 V 0.031 Ohms Surface Mount Power Mosfet - SOT-23

***ical: Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

***ark: Mosfet, N Channel, 20V, 0.025Ohm, 3.9A, Sot-23-3, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; On Resistance Rds(On):0.025Ohm; Transistor Mounting:surface Mount; Msl:- Rohs Compliant: No

***ment14 APAC: MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:2312; Current Id Max:5A; Package / Case:SOT-23; Power Dissipation Pd:750µW; Pulse Current Idm:15A; SMD Marking:M2; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:850mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:0.85V; Voltage Vgs th Min:0.45V

SI2312BDS-T1-E3 Mehr Informationen

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI2312BDS-T1-E3 DISTI # V72:2272_09216792	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	3	1:$0.5768
SI2312BDS-T1-E3 DISTI # V36:1790_09216792	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	0
SI2312BDS-T1-E3 DISTI # SI2312BDS-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 20V 3.9A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	117509In Stock	1000:$0.1798 500:$0.2327 100:$0.2961 10:$0.3970 1:$0.4600
SI2312BDS-T1-E3 DISTI # SI2312BDS-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 20V 3.9A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	117509In Stock	1000:$0.1798 500:$0.2327 100:$0.2961 10:$0.3970 1:$0.4600
SI2312BDS-T1-E3 DISTI # SI2312BDS-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 20V 3.9A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	117000In Stock	75000:$0.1301 30000:$0.1314 15000:$0.1386 6000:$0.1489 3000:$0.1592
SI2312BDS-T1-E3 DISTI # 33694263	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	24000	3000:$0.2203
SI2312BDS-T1-E3 DISTI # SI2312BDS-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Cut TR (SOS) (Alt: SI2312BDS-T1-E3) RoHS: Compliant Min Qty: 1 Container: Cut Tape	Americas - 890	30000:$0.0980 18000:$0.1005 12000:$0.1031 6000:$0.1059 1:$0.1088
SI2312BDS-T1-E3 DISTI # SI2312BDS-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R (Alt: SI2312BDS-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1919 18000:€0.2059 12000:€0.2239 6000:€0.2599 3000:€0.3809
SI2312BDS-T1-E3 DISTI # SI2312BDS-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2312BDS-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1018 18000:$0.1046 12000:$0.1076 6000:$0.1121 3000:$0.1156
SI2312BDS-T1-E3 DISTI # SI2312BDS-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R (Alt: SI2312BDS-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI2312BDS-T1-E3 DISTI # 51K6950	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 51K6950) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.2700 500:$0.3490 250:$0.3880 100:$0.4250 50:$0.4990 25:$0.5730 1:$0.7500
SI2312BDS-T1-E3 DISTI # 85W0175	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: 85W0175) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.2250 18000:$0.2280 12000:$0.2310 6000:$0.2410 1:$0.2540
SI2312BDS-T1-E3 DISTI # 85W0175	Vishay Intertechnologies	MOSFET, N CHANNEL, 20V, 0.025OHM, 3.9A, SOT-23-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,MSL:- RoHS Compliant: Yes	0	1:$0.2820 3000:$0.2820
SI2312BDS-T1-E3 DISTI # 51K6950	Vishay Intertechnologies	N CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:850mV,Power Dissipation Pd:750mW RoHS Compliant: Yes	14208	1:$0.1890 25:$0.1890 50:$0.1890 100:$0.1890 250:$0.1890 500:$0.1890
SI2312BDS-T1-E3. DISTI # 26AC3318	Vishay Intertechnologies	N-CHANNEL 20-V (D-S) MOSFET ROHS COMPLIANT: NO	0	1:$0.2820 3000:$0.2820
SI2312BDS-T1-E3 DISTI # 70026195	Vishay Siliconix	N-CHANNEL 20-V (D-S) MOSFET RoHS: Compliant	0	3000:$0.3030 6000:$0.2970 15000:$0.2880 30000:$0.2760 75000:$0.2580
SI2312BDS-T1-E3/BKN DISTI # 70026355	Vishay Siliconix	N-CHANNEL 20-V (D-S) MOSFET RoHS: Compliant	0	1:$0.2900 2:$0.2840 5:$0.2760 10:$0.2640 25:$0.2470
SI2312BDS-T1-E3 DISTI # 781-SI2312BDS-E3	Vishay Intertechnologies	MOSFET N-Channel 20V 3.9A RoHS: Compliant	58264	1:$0.5900 10:$0.4570 100:$0.3390 500:$0.2780 1000:$0.2150 3000:$0.1960 6000:$0.1830 9000:$0.1710
SI2312BDS-T1-E3	Vishay Intertechnologies	Single N-Channel 20 V 0.031 Ohms Surface Mount Power Mosfet - SOT-23 RoHS: Compliant	2537Cut Tape/Mini-Reel	1:$0.2600 100:$0.2000 250:$0.1920 500:$0.1850 1500:$0.1740
SI2312BDS-T1-E3	Vishay Intertechnologies	Single N-Channel 20 V 0.031 Ohms Surface Mount Power Mosfet - SOT-23 RoHS: Compliant	36000Reel	3000:$0.1570
SI2312BDS-T1-E3	Vishay Intertechnologies		511
SI2312BDS-T1-E3	Vishay Intertechnologies	MOSFET Transistor, N-Channel, SOT-23	498	162:$0.2070 19:$0.3105 1:$0.6900
SI2312BDST1E3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 RoHS: Compliant	3000
SI2312BDS-T1-E3 DISTI # XSFP00000027021	Vishay Siliconix	RoHS: Compliant	31370 in Stock0 on Order	31370:$0.2093 3000:$0.2243
SI2312BDS-T1-E3	Vishay Intertechnologies	MOSFET N-Channel 20V 3.9A RoHS: Compliant	Americas - 75000
SI2312BDS-T1-E3 DISTI # 2396085	Vishay Intertechnologies	MOSFET, N-CH, 20V, 3.9A, SOT-23-3 RoHS: Compliant	26506	500:$0.3510 100:$0.4470 10:$0.5980 1:$0.6900
SI2312BDS-T1-E3 DISTI # 2367266	Vishay Intertechnologies	MOSFET, N CHANNEL, 20V, 0.025OHM, 3.9A, RoHS: Compliant	0	3000:$0.2880
SI2312BDS-T1-E3 DISTI # 2396085RL	Vishay Intertechnologies	MOSFET, N-CH, 20V, 3.9A, SOT-23-3 RoHS: Compliant	0	500:$0.3510 100:$0.4470 10:$0.5980 1:$0.6900
SI2312BDS-T1-E3 DISTI # 1497608	Vishay Intertechnologies	MOSFET, N, SOT-23 RoHS: Compliant	0	500:$0.3510 100:$0.4470 10:$0.5980 1:$0.6900
SI2312BDS-T1-E3 DISTI # 2396085	Vishay Intertechnologies	MOSFET, N-CH, 20V, 3.9A, SOT-23-3	26062	500:£0.1940 250:£0.2290 100:£0.2640 10:£0.3940 1:£0.4890

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Verfügbarkeit

Aktie:: 58
Auf Bestellung:: 2041
Menge eingeben:

Der aktuelle Preis von SI2312BDS-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,59 $~~; ~~0,59 $~~

10: ~~0,46 $~~; ~~4,57 $~~

100: ~~0,34 $~~; ~~33,90 $~~

500: ~~0,28 $~~; ~~139,00 $~~

1000: ~~0,22 $~~; ~~215,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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SI2312BDS-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes