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IXXH40N65B4

IXXH40N65B4
Mfr. #:
IXXH40N65B4
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXXH40N65B4 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IXXH40N65B4 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
IGBTs - Single
Serie
GenX4, XPT
Verpackung
Rohr
Gewichtseinheit
0.158733 oz
Montageart
Durchgangsloch
Handelsname
XPT
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-247 (IXXH)
Aufbau
Single
Leistung max
455W
Reverse-Recovery-Time-trr
-
Strom-Kollektor-Ic-Max
120A
Spannungs-Kollektor-Emitter-Breakdown-Max
650V
IGBT-Typ
PT
Strom-Kollektor-gepulster-Icm
240A
Vce-on-Max-Vge-Ic
1.8V @ 15V, 40A
Schaltenergie
1.4mJ (on), 560μJ (off)
Gate-Gebühr
77nC
Td-ein-aus-25°C
28ns/144ns
Testbedingung
400V, 40A, 5 Ohm, 15V
Pd-Verlustleistung
455 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
650 V
Kollektor-Emitter-Sättigungsspannung
1.5 V
Kontinuierlicher Kollektorstrom-bei-25-C
120 A
Gate-Emitter-Leckstrom
100 nA
Maximale Gate-Emitter-Spannung
20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
40 A
Tags
IXXH40N65B, IXXH4, IXXH, IXX
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IXXH40N65B4
DISTI # IXXH40N65B4-ND		IXYS CorporationIGBT 650V 120A 455W TO247AD
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$4.3707
IXXH40N65B4D1
DISTI # IXXH40N65B4D1-ND		IXYS CorporationIGBT
RoHS: Not compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$5.5533
IXXH40N65B4H1
DISTI # IXXH40N65B4H1-ND		IXYS CorporationIGBT 650V 120A 455W TO247AD
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$6.5007
IXXH40N65B4
DISTI # 747-IXXH40N65B4		IXYS CorporationIGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT
RoHS: Compliant		62
  • 1:$5.6000
  • 10:$5.0000
  • 25:$4.3700
  • 50:$4.1600
  • 100:$4.1000
  • 250:$3.7000
  • 500:$2.9100
  • 1000:$2.7200
  • 2500:$2.6200
IXXH40N65B4H1
DISTI # 747-IXXH40N65B4H1		IXYS CorporationIGBT Transistors
RoHS: Compliant		10
  • 1:$7.9300
  • 10:$7.1400
  • 25:$6.5000
  • 50:$5.9400
  • 100:$5.8700
  • 250:$5.3500
  • 500:$4.9200
  • 1000:$4.2800
Bild Teil # Beschreibung
IXXH40N65B4D1

Mfr.#: IXXH40N65B4D1

OMO.#: OMO-IXXH40N65B4D1

 Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD
IXXH40N65C4D1

Mfr.#: IXXH40N65C4D1

OMO.#: OMO-IXXH40N65C4D1

 Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD
IXXH40N65B4

Mfr.#: IXXH40N65B4

OMO.#: OMO-IXXH40N65B4

 IGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT
IXXH40N65B4H1

Mfr.#: IXXH40N65B4H1

OMO.#: OMO-IXXH40N65B4H1

 IGBT Transistors DISC IGBT XPT-GENX4
IXXH40N65B4D1

Mfr.#: IXXH40N65B4D1

OMO.#: OMO-IXXH40N65B4D1-IXYS-CORPORATION

 IGBT
IXXH40N65B4H1

Mfr.#: IXXH40N65B4H1

OMO.#: OMO-IXXH40N65B4H1-IXYS-CORPORATION

 IGBT 650V 120A 455W TO247AD
IXXH40N65B4

Mfr.#: IXXH40N65B4

OMO.#: OMO-IXXH40N65B4-IXYS-CORPORATION

 IGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1500
Menge eingeben:
Der aktuelle Preis von IXXH40N65B4 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,93 $
3,93 $
10
3,73 $
37,34 $
100
3,54 $
353,70 $
500
3,34 $
1 670,25 $
1000
3,14 $
3 144,00 $
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