RS1E130GNTB

Mfr. #:: RS1E130GNTB
Hersteller:: Rohm Semiconductor
Beschreibung:: MOSFET 4.5V Drive Nch MOSFET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: RS1E130GNTB Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: RS1E130GNTB Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: ROHM Halbleiter

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: HSOP-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 13 A

Rds On - Drain-Source-Widerstand:: 11.7 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 2.5 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 7.9 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 3 W

Aufbau:: Single

Verpackung:: Spule

Transistortyp:: 1 N-Channel

Marke:: ROHM Halbleiter

Vorwärtstranskonduktanz - Min:: 8 S

Abfallzeit:: 3.1 ns

Produktart:: MOSFET

Anstiegszeit:: 4.3 ns

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 22.4 ns

Typische Einschaltverzögerungszeit:: 8.4 ns

Teil # Aliase:: RS1E130GN

Gewichtseinheit:: 0.002490 oz

Tags: RS1E130G, RS1E13, RS1E1, RS1E, RS1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RS1E130GNTB Beschreibung

***p One Stop Global: Trans MOSFET N-CH 30V 13A Automotive 8-Pin HSOP EP T/R

***et: 4.5V DRIVE NCH MOSFET, HSOP8(SINGLE), NCH, DISCRETE

***: 4.5V N-CHANNEL

***(Formerly Allied Electronics): IRF8714PBF N-channel MOSFET Transistor; 14 A; 30 V; 8-Pin SOIC

***roFlash: Single N-Channel 30 V 8.7 mOhm 8.1 nC HEXFET¬Æ Power Mosfet - SOIC-8

***nell: MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0087ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation P

***ure Electronics: Single N-Channel 30 V 8.5 mOhm 8.3 nC HEXFET® Power Mosfet - SOIC-8

***(Formerly Allied Electronics): MOSFET; N Ch.; 30V; 14A; 8.5 MOHM; 8.3 NC QG; SO-8; Pb-Free

***ical: Trans MOSFET N-CH Si 30V 14A 8-Pin SOIC Tube

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:14A; On Resistance Rds(On):0.0069Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V Rohs Compliant: Yes

***roFlash: Power Field-Effect Transistor, 14A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ure Electronics: N-Channel 30 V 9 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***Yang: Trans MOSFET N-CH 30V 13.5A 8-Pin SOIC N T/R - Tape and Reel

***emi: N-Channel PowerTrench® SyncFET™, 30V, 13.5A, 9.0mΩ

***nell: MOSFET, N-CH, 30V, 13.5A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V;

***rchild Semiconductor: The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

***emi: Single N-Channel Power MOSFET 30V, 40A, 9.4mΩ

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; On Resistance Rds(On):0.0075Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V Rohs Compliant: Yes

***nell: MOSFET, AEC-Q101, N-CH, 30V, WDFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V; Power Dissipation Pd: 26W; Transistor Case Style: WDFN; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***emi: N-Channel Power Trench® MOSFET 30V, 13.3A, 8.5mΩ

***ure Electronics: Single N-Channel 30 V 2.3 W 29 nC PowerTrench Surface Mount Mosfet - MLP-3.3x3.3

***nell: MOSFET, N CH, 30V, 16A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:29W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

RS1E130GNTB Mehr Informationen

Silicon Power MOSFETs: ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.

Medium Power MOSFETs: ROHM Medium Power MOSFETs are low ON-resistance devices useful for a wide range of applications. They feature a broad lineup with compact, high-power and complex types to meet various needs. They come in high-power small mold packages and typical applications are for DC/DC converters and load switches.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
RS1E130GNTB DISTI # C1S625901169847	ROHM Semiconductor	Trans MOSFET N-CH 30V 13A Automotive 8-Pin HSOP EP T/R RoHS: Compliant	40	10:$0.1820
RS1E130GNTB DISTI # RS1E130GNTBCT-ND	ROHM Semiconductor	MOSFET N-CH 30V 13A 8-HSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2290In Stock	1000:$0.2084 500:$0.2697 100:$0.3432 10:$0.4600 1:$0.5400
RS1E130GNTB DISTI # RS1E130GNTBDKR-ND	ROHM Semiconductor	MOSFET N-CH 30V 13A 8-HSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2290In Stock	1000:$0.2084 500:$0.2697 100:$0.3432 10:$0.4600 1:$0.5400
RS1E130GNTB DISTI # RS1E130GNTBTR-ND	ROHM Semiconductor	MOSFET N-CH 30V 13A 8-HSOP RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	25000:$0.1583 12500:$0.1606 5000:$0.1726 2500:$0.1845
RS1E130GNTB DISTI # RS1E130GNTB	ROHM Semiconductor	4.5V DRIVE NCH MOSFET, HSOP8(SINGLE), NCH, DISCRETE - Tape and Reel (Alt: RS1E130GNTB) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0
RS1E130GNTB DISTI # 755-RS1E130GNTB	ROHM Semiconductor	MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant	1960	1:$0.5100 10:$0.4300 100:$0.2620 1000:$0.2030 2500:$0.1730 10000:$0.1610 25000:$0.1530 50000:$0.1490
RS1E130GNTB	ROHM Semiconductor		33	21:$0.7500 5:$1.0000 1:$1.2500
RS1E130GNTB	ROHM Semiconductor		100	1:¥5.3321 100:¥3.0233 1250:¥1.9168 2500:¥1.4280
RS1E130GNTB	ROHM Semiconductor	MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant	Americas -
RS1E130GNTB	ROHM Semiconductor	RoHS(ship within 1day)	42	1:$0.9900 10:$0.5800 50:$0.3600 100:$0.3100 500:$0.2600 1000:$0.2500

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: RD3L050SNTL1 OMO.#: OMO-RD3L050SNTL1	MOSFET Nch 60V 5A TO-252(DPAK)
	Mfr.#: RD3P100SNTL1 OMO.#: OMO-RD3P100SNTL1	MOSFET Nch 100V 10A TO-252 (DPAK)
	Mfr.#: RD3T050CNTL1 OMO.#: OMO-RD3T050CNTL1	MOSFET Nch 200V 5A TO-252 (DPAK)
	Mfr.#: CC0402KRX7R7BB104 OMO.#: OMO-CC0402KRX7R7BB104	Multilayer Ceramic Capacitors MLCC - SMD/SMT 100nF 16V X7R 10%
	Mfr.#: R1580N003A-TR-FE OMO.#: OMO-R1580N003A-TR-FE-176	LED Lighting Drivers Flickerless by linear output, Input voltage 3.6V to 34.0V, PWM Duty Accuracy =1.0% Loert Stand=28uA
	Mfr.#: RD3L050SNTL1 OMO.#: OMO-RD3L050SNTL1-ROHM-SEMI	NCH 60V 5A POWER MOSFET
	Mfr.#: RD3P100SNTL1 OMO.#: OMO-RD3P100SNTL1-ROHM-SEMI	NCH 100V 10A POWER MOSFET
	Mfr.#: RD3T050CNTL1 OMO.#: OMO-RD3T050CNTL1-ROHM-SEMI	NCH 200V 5A POWER MOSFET
	Mfr.#: MAXM22511GLH+ OMO.#: OMO-MAXM22511GLH--MAXIM-INTEGRATED	Neu und Original
	Mfr.#: CC0402KRX7R7BB104 OMO.#: OMO-CC0402KRX7R7BB104-YAGEO	Multilayer Ceramic Capacitors MLCC - SMD/SMT 100nF 16V X7R 10%

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1984
Menge eingeben:

Der aktuelle Preis von RS1E130GNTB dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,51 $~~; ~~0,51 $~~

10: ~~0,43 $~~; ~~4,30 $~~

100: ~~0,26 $~~; ~~26,20 $~~

1000: ~~0,20 $~~; ~~203,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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RS1E130GNTB

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes