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IPB027N10N3GATMA1

IPB027N10N3GATMA1
Mfr. #:
IPB027N10N3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB027N10N3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PG-TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
120 A
Rds On - Drain-Source-Widerstand:
2.7 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
155 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
300 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
94 S
Abfallzeit:
28 ns
Produktart:
MOSFET
Anstiegszeit:
58 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
84 ns
Typische Einschaltverzögerungszeit:
34 ns
Teil # Aliase:
G IPB027N10N3 IPB27N1N3GXT SP000506508
Gewichtseinheit:
0.068654 oz
Tags
IPB027N10N3, IPB027, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 4.5 mOhm 206 nC OptiMOS™ Power Mosfet - D2PAK
***ow.cn
Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; On Resistance Rds(On):0.0023Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V Rohs Compliant: Yes
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Teil # Mfg. Beschreibung Aktie Preis
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2767In Stock
  • 500:$3.7670
  • 100:$4.6520
  • 10:$5.6730
  • 1:$6.3500
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2767In Stock
  • 500:$3.7670
  • 100:$4.6520
  • 10:$5.6730
  • 1:$6.3500
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		2000In Stock
  • 1000:$3.0845
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB027N10N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$2.6900
  • 2000:$2.6900
  • 4000:$2.6900
  • 6000:$2.6900
  • 10000:$2.6900
IPB027N10N3GATMA1
DISTI # SP000506508		Infineon Technologies AGTrans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: SP000506508)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€2.6900
  • 2000:€2.5900
  • 4000:€2.4900
  • 6000:€2.2900
  • 10000:€2.0900
IPB027N10N3GATMA1
DISTI # 85X6013		Infineon Technologies AGMOSFET, N-CH, 100V, 120A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes156
  • 1:$5.3100
  • 10:$4.5100
  • 25:$4.3100
  • 50:$4.1100
  • 100:$3.9100
  • 250:$3.7100
  • 500:$3.3300
IPB027N10N3GATMA1.
DISTI # 27AC6718		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:300W,No. of Pins:3Pins RoHS Compliant: Yes0
    IPB027N10N3GATMA1Infineon Technologies AGSingle N-Channel 100 V 4.5 mOhm 206 nC OptiMOS Power Mosfet - D2PAK
    RoHS: Not Compliant    		2000Reel
    • 1000:$3.0800
    IPB027N10N3 G
    DISTI # 726-IPB027N10N3G    		Infineon Technologies AGMOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		5900
    • 1:$5.3100
    • 10:$4.5100
    • 100:$3.9100
    • 250:$3.7100
    • 500:$3.3300
    • 1000:$2.8100
    IPB027N10N3GATMA1
    DISTI # 726-IPB027N10N3GATMA    		Infineon Technologies AGMOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		757
    • 1:$5.3100
    • 10:$4.5100
    • 100:$3.9100
    • 250:$3.7100
    • 500:$3.3300
    • 1000:$2.8100
    IPB027N10N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		10
    • 1000:$2.4200
    • 500:$2.5500
    • 100:$2.6500
    • 25:$2.7700
    • 1:$2.9800
    IPB027N10N3GATMA1
    DISTI # 8259235    		Infineon Technologies AGMOSFET N-CH 120A 100V OPTIMOS3 TO263, PK184
    • 2:£3.9150
    • 10:£2.9900
    • 50:£2.7250
    • 250:£2.4600
    • 500:£2.2150
    IPB027N10N3GATMA1
    DISTI # 8259235P    		Infineon Technologies AGMOSFET N-CH 120A 100V OPTIMOS3 TO263, RL922
    • 10:£2.9900
    • 50:£2.7250
    • 250:£2.4600
    • 500:£2.2150
    IPB027N10N3GATMA1
    DISTI # 2443379    		Infineon Technologies AGMOSFET, N CH, 100V, 120A, TO-263-3
    RoHS: Compliant    		154
    • 1:$8.4000
    • 10:$7.1400
    • 100:$6.1900
    • 250:$5.8700
    • 500:$5.2800
    • 1000:$4.4500
    IPB027N10N3GATMA1
    DISTI # 2443379RL    		Infineon Technologies AGMOSFET, N CH, 100V, 120A, TO-263-3
    RoHS: Compliant    		0
    • 1:$8.4000
    • 10:$7.1400
    • 100:$6.1900
    • 250:$5.8700
    • 500:$5.2800
    • 1000:$4.4500
    IPB027N10N3GATMA1
    DISTI # 2443379    		Infineon Technologies AGMOSFET, N CH, 100V, 120A, TO-263-3
    RoHS: Compliant    		254
    • 1:£3.7700
    • 10:£2.7600
    • 100:£2.4800
    • 250:£2.3000
    • 500:£2.1100
    IPB027N10N3GATMA1
    DISTI # XSFP00000103332    		Infineon Technologies AG 
    RoHS: Compliant    		1346
    • 1000:$4.1100
    • 1346:$3.8500
    Bild Teil # Beschreibung
    FMMT593TA

    Mfr.#: FMMT593TA

    OMO.#: OMO-FMMT593TA

    		 Bipolar Transistors - BJT PNP Medium Power
    LL4148-GS08

    Mfr.#: LL4148-GS08

    OMO.#: OMO-LL4148-GS08

    		 Diodes - General Purpose, Power, Switching 100V Io/150mA T/R
    ERM8-050-01-L-D-RA-TR

    Mfr.#: ERM8-050-01-L-D-RA-TR

    OMO.#: OMO-ERM8-050-01-L-D-RA-TR

    		 Board to Board & Mezzanine Connectors 0.80 mm Edge Rate Rugged High-Speed Terminal Strip
    SRP1265A-3R3M

    Mfr.#: SRP1265A-3R3M

    OMO.#: OMO-SRP1265A-3R3M

    		 Fixed Inductors 3.3uH 20% SMD 1265 AEC-Q200
    C3225X5R1A336M200AC

    Mfr.#: C3225X5R1A336M200AC

    OMO.#: OMO-C3225X5R1A336M200AC

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 10V 33uF X5R 20% T: 2mm
    AC0805KKX7R0BB104

    Mfr.#: AC0805KKX7R0BB104

    OMO.#: OMO-AC0805KKX7R0BB104

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT .1uF 100V 10% AEC-Q200
    C1005X7S2A103K050BB

    Mfr.#: C1005X7S2A103K050BB

    OMO.#: OMO-C1005X7S2A103K050BB

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 100V 0.01uF X7S 10% T: 0.5mm
    ERM8-050-01-L-D-RA-TR

    Mfr.#: ERM8-050-01-L-D-RA-TR

    OMO.#: OMO-ERM8-050-01-L-D-RA-TR-SAMTEC

    		 Conn Micro High Speed Terminal Strip HDR 100 POS 0.8mm Solder RA SMD T/R
    LL4148-GS08

    Mfr.#: LL4148-GS08

    OMO.#: OMO-LL4148-GS08-VISHAY

    		 Diodes - General Purpose, Power, Switching 100V Io/150mA T/R
    AC0805KKX7R0BB104

    Mfr.#: AC0805KKX7R0BB104

    OMO.#: OMO-AC0805KKX7R0BB104-YAGEO

    		 SURFACE MOUNT MULTILAYERCERAMIC CAPACITORS
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1987
    Menge eingeben:
    Der aktuelle Preis von IPB027N10N3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    5,30 $
    5,30 $
    10
    4,50 $
    45,00 $
    100
    3,90 $
    390,00 $
    250
    3,70 $
    925,00 $
    500
    3,32 $
    1 660,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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