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FCMT299N60

FCMT299N60
Mfr. #:
FCMT299N60
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET SF2 600V 299MOHM F PQFN88
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FCMT299N60 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FCMT299N60 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-88-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
12 A
Rds On - Drain-Source-Widerstand:
299 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
39 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
125 W
Aufbau:
Single
Handelsname:
SuperFET II
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
8 mm
Serie:
FCMT299N60
Transistortyp:
1 N-Channel
Breite:
8 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
12 S
Abfallzeit:
7 ns
Produktart:
MOSFET
Anstiegszeit:
9 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
51 ns
Typische Einschaltverzögerungszeit:
19 ns
Gewichtseinheit:
0.015839 oz
Tags
FCMT, FCM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 12 A, 299 mΩ, Power88
***ical
Trans MOSFET N-CH 600V 12A 4-Pin Power 88 EP T/R
***ark
TAPE REEL / PQFN88 PKG, 199mohm, 600V, SuperFET2
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as server/telecom power, adaptor and solar inverter applications.The Power88 package is an ultra-slim surface-mount package (1 mm high) with a low profile and small footprint (8x8 mm2). SuperFET II MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources. Power88 offers Moisture Sensitivity Level 1 (MSL 1).
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
Teil # Mfg. Beschreibung Aktie Preis
FCMT299N60
DISTI # V36:1790_06337774		ON SemiconductorPQFN88 PKG, 199MOHM, 600V, SUP0
  • 3000000:$0.9974
  • 1500000:$0.9987
  • 300000:$1.0620
  • 30000:$1.1520
  • 3000:$1.1660
FCMT299N60
DISTI # V72:2272_06337774		ON SemiconductorPQFN88 PKG, 199MOHM, 600V, SUP0
    FCMT299N60
    DISTI # FCMT299N60TR-ND    		ON SemiconductorMOSFET N-CH 600V 12A POWER88
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		On Order
    • 6000:$1.1233
    • 3000:$1.1665
    FCMT299N60
    DISTI # FCMT299N60CT-ND    		ON SemiconductorMOSFET N-CH 600V 12A POWER88
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$1.2905
    • 500:$1.5574
    • 100:$1.8956
    • 10:$2.3580
    • 1:$2.6300
    FCMT299N60
    DISTI # FCMT299N60DKR-ND    		ON SemiconductorMOSFET N-CH 600V 12A POWER88
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$1.2905
    • 500:$1.5574
    • 100:$1.8956
    • 10:$2.3580
    • 1:$2.6300
    FCMT299N60
    DISTI # FCMT299N60    		ON SemiconductorTrans MOSFET N-CH 600V 12A 4-Pin Power 88 T/R - Tape and Reel (Alt: FCMT299N60)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$1.0149
    • 18000:$1.0409
    • 12000:$1.0549
    • 6000:$1.0679
    • 3000:$1.0749
    FCMT299N60
    DISTI # FCMT299N60    		ON SemiconductorTrans MOSFET N-CH 600V 12A 4-Pin Power 88 T/R (Alt: FCMT299N60)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.9539
    • 18000:€1.0219
    • 12000:€1.0999
    • 6000:€1.1919
    • 3000:€1.4309
    FCMT299N60
    DISTI # 40Y7271    		ON SemiconductorSF2 600V 299MOHM F PQFN88 / REEL0
    • 1:$1.4300
    FCMT299N60
    DISTI # 99AC9139    		ON SemiconductorMOSFET, N-CH, 12A, 600V, PQFN,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.25ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power Dissipation RoHS Compliant: Yes0
    • 1000:$1.2000
    • 500:$1.4500
    • 250:$1.5600
    • 100:$1.6600
    • 50:$1.7900
    • 25:$1.9300
    • 10:$2.0700
    • 1:$2.4400
    FCMT299N60
    DISTI # 512-FCMT299N60    		ON SemiconductorMOSFET SF2 600V 299MOHM F PQFN88
    RoHS: Compliant    		0
    • 1:$2.4200
    • 10:$2.0500
    • 100:$1.6400
    • 500:$1.4400
    • 1000:$1.1900
    • 3000:$1.1100
    • 6000:$1.0600
    FCMT299N60
    DISTI # 3018889    		ON SemiconductorMOSFET, N-CH, 12A, 600V, PQFN0
    • 500:£1.1200
    • 250:£1.1500
    • 100:£1.1900
    • 10:£1.4800
    • 1:£1.9800
    FCMT299N60
    DISTI # 3018889    		ON SemiconductorMOSFET, N-CH, 12A, 600V, PQFN
    RoHS: Compliant    		0
    • 1000:$1.8900
    • 500:$2.2900
    • 250:$2.5500
    • 100:$2.7400
    • 10:$3.3600
    • 1:$4.3900
    Bild Teil # Beschreibung
    STL33N60DM2

    Mfr.#: STL33N60DM2

    OMO.#: OMO-STL33N60DM2

    		 MOSFET N-channel 600 V, 0.115 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package
    STL22N65M5

    Mfr.#: STL22N65M5

    OMO.#: OMO-STL22N65M5

    		 MOSFET N-Ch 650V .198Ohm 15A MDmesh M5
    STL22N65M5

    Mfr.#: STL22N65M5

    OMO.#: OMO-STL22N65M5-STMICROELECTRONICS

    		 MOSFET N CH 650V 15A PWRFLT8X8HV
    STL33N60DM2

    Mfr.#: STL33N60DM2

    OMO.#: OMO-STL33N60DM2-STMICROELECTRONICS

    		 N-CHANNEL 600 V, 0.115 OHM TYP.,
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1986
    Menge eingeben:
    Der aktuelle Preis von FCMT299N60 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,42 $
    2,42 $
    10
    2,05 $
    20,50 $
    100
    1,64 $
    164,00 $
    500
    1,44 $
    720,00 $
    1000
    1,19 $
    1 190,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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