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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BUZ50A DISTI # 09P9956 | Solid State Devices Inc (SSDI) | TO 220 HV N-Channel Mosfet / BULK RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| BUZ50A DISTI # 70911156 | Solid State Manufacturing | TO 220 HV N-Channel Mosfet RoHS: Not Compliant | 0 |
|
| BUZ50A-220M | TT Electronics plc | Bipolar Transistors - BJT N-CHANNEL TO220M | Americas - | |
| BUZ50A | Solid State Devices Inc (SSDI) | 3 | ||
| BUZ50A | 232 | |||
| BUZ50A | Infineon Technologies AG | Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | Europe - 340 | |
| BUZ50A | ISC | TO-3 | 5000 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: BUZ104E3046 OMO.#: OMO-BUZ104E3046-1190 |
Neu und Original |
|
Mfr.#: BUZ111SL-E3045 OMO.#: OMO-BUZ111SL-E3045-1190 |
Neu und Original |
|
Mfr.#: BUZ11R4676 OMO.#: OMO-BUZ11R4676-1190 |
Neu und Original |
|
Mfr.#: BUZ32E3045 OMO.#: OMO-BUZ32E3045-1190 |
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BUZ338 OMO.#: OMO-BUZ338-1190 |
Neu und Original |
|
Mfr.#: BUZ37 OMO.#: OMO-BUZ37-1190 |
Neu und Original |
|
Mfr.#: BUZ45. OMO.#: OMO-BUZ45--1190 |
Neu und Original |
|
Mfr.#: BUZ60B OMO.#: OMO-BUZ60B-1190 |
Neu und Original |
|
Mfr.#: BUZZER_SMQS-85401-32C0 |
Neu und Original |
|
Mfr.#: BUZ30A H OMO.#: OMO-BUZ30A-H-124 |
Darlington Transistors MOSFET N-Ch 200V 21A TO220FP-3 |