We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RF1S25N06 DISTI # RF1S25N06 | Renesas Electronics Corporation | - Bulk (Alt: RF1S25N06) RoHS: Not Compliant Min Qty: 893 Container: Bulk | Americas - 0 |
|
| RF1S25N06 DISTI # 512-RF1S25N06 | ON Semiconductor | MOSFET Power MOSFET N-Ch 60V/25a/0.047 Ohm RoHS: Not compliant | 0 | |
| RF1S25N06 | Harris Semiconductor | Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | 400 |
|
| RF1S25N06SM | Harris Semiconductor | Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 3005 |
|
| RF1S25N06SM9A | Harris Semiconductor | Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 4000 |
|
| RF1S25N06SMR4643 | Harris Semiconductor | RoHS: Not Compliant | 3200 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: F1S200 OMO.#: OMO-F1S200-1190 |
Neu und Original |
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Mfr.#: F1S22N10 OMO.#: OMO-F1S22N10-1190 |
Neu und Original |
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|
Mfr.#: F1S256U1M3R OMO.#: OMO-F1S256U1M3R-1190 |
Neu und Original |
|
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Mfr.#: F1S256U1MK OMO.#: OMO-F1S256U1MK-1190 |
Neu und Original |
|
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Mfr.#: F1S25N06 OMO.#: OMO-F1S25N06-1190 |
Neu und Original |
|
|
Mfr.#: F1S25N08 OMO.#: OMO-F1S25N08-1190 |
Neu und Original |