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IRLU3103PBF

IRLU3103PBF
Mfr. #:
IRLU3103PBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT 30V 46A 19mOhm 33.3nC LogLvl
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRLU3103PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLU3103PBF DatasheetIRLU3103PBF Datasheet (P4-P6)IRLU3103PBF Datasheet (P7-P9)IRLU3103PBF Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
46 A
Rds On - Drain-Source-Widerstand:
24 mOhms
Vgs - Gate-Source-Spannung:
16 V
Qg - Gate-Ladung:
33.3 nC
Pd - Verlustleistung:
69 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
6.22 mm
Länge:
6.73 mm
Transistortyp:
1 N-Channel
Breite:
2.38 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
75
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001578972
Gewichtseinheit:
0.139332 oz
Tags
IRLU3103, IRLU310, IRLU31, IRLU3, IRLU, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ment14 APAC
MOSFET, N, 30V, 46A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):19mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:107W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:55A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.8°C/W; On State resistance @ Vgs = 10V:19mohm; Package / Case:IPAK; Power Dissipation Pd:107W; Power Dissipation Pd:107W; Pulse Current Idm:220A; Termination Type:Through Hole; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7.5Milliohms;ID 56A;I-Pak (TO-251AA);PD 50W
***ure Electronics
Single N-Channel 30 V 9.5 mOhm 9.6 nC HEXFET® Power Mosfet - TO-251
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ment14 APAC
MOSFET, N, LOGIC, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:50W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:56A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:50W; Power Dissipation Pd:50W; Pulse Current Idm:220A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V
***ser
MOSFETs 30V,58A,10 OHM, NCH PWR TRENCH MOSFET
***Yang
MOSFET N-CH 30V 58A I-PAK - Bulk
***i-Key Marketplace
MOSFET N-CH 30V 13A/58A IPAK
***S
new, original packaged
***el Nordic
Contact for details
***ser
MOSFETs- Power and Small Signal NFET 30V 63A 8MOHM
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:63A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-IPAK ;RoHS Compliant: Yes
***nell
MOSFET, N, 30V, 3 I-PAK; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:63A; Resistance, Rds On:0.008ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.5V; Case Style:I-PAK; Termination Type:Through Hole; Power, Pd:54.6W; Voltage, Vds Max:30V
***ical
Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-251 Tube
***ment14 APAC
MOSFET, N CH, 50A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:47W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:47W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***icroelectronics
N-channel 30 V, 0.0061 Ohm, 65 A, IPAK STripFET(TM) V Power MOSFET
*** Electronic Components
IGBT Transistors MOSFET N-Ch 30V 0.0061Ohm 65A pwr STripFET V
***r Electronics
Power Field-Effect Transistor, 65A I(D), 30V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***emi
Power MOSFET 30V 54A 10 mOhm Single N-Channel DPAK
***ser
MOSFETs- Power and Small Signal NFET 30V 54A 10MOHM
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:54A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):10mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:50W ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
IRLU3103PBF
DISTI # IRLU3103PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 55A I-PAK
RoHS: Compliant
Min Qty: 900
Container: Tube		Limited Supply - Call
    IRLU3103PBF
    DISTI # 70018570    		Infineon Technologies AGIRLU3103PBF N-channel MOSFET Transistor,55 A,30 V,3-Pin IPAK
    RoHS: Compliant    		0
    • 900:$1.6100
    • 1800:$1.5780
    • 4500:$1.5300
    • 9000:$1.4650
    • 22500:$1.3690
    IRLU3103PBFInternational Rectifier 
    RoHS: Not Compliant    		343
    • 1000:$0.5900
    • 500:$0.6200
    • 100:$0.6500
    • 25:$0.6700
    • 1:$0.7200
    IRLU3103PBF
    DISTI # 942-IRLU3103PBF    		Infineon Technologies AGMOSFET MOSFT 30V 46A 19mOhm 33.3nC LogLvl
    RoHS: Compliant    		0
      IRLU3103PBF
      DISTI # 8651361      		Infineon Technologies AGMOSFET, N, 30V, 46A, I-PAK
      RoHS: Compliant      		0
      • 1:$1.9800
      • 10:$1.6300
      • 100:$1.3200
      • 500:$1.1800
      • 1000:$1.0500
      • 2500:$0.9730
      • 5000:$0.9400
      Bild Teil # Beschreibung
      IRLU3110ZPBF

      Mfr.#: IRLU3110ZPBF

      OMO.#: OMO-IRLU3110ZPBF

      		 MOSFET MOSFT 100V 63A 14mOhm 34nC Log Lvl
      IRLU3715ZPBF

      Mfr.#: IRLU3715ZPBF

      OMO.#: OMO-IRLU3715ZPBF

      		 MOSFET MOSFT 20V 49A 11mOhm 7.2nC Qg log lvl
      IRLU3705ZPBF

      Mfr.#: IRLU3705ZPBF

      OMO.#: OMO-IRLU3705ZPBF

      		 MOSFET MOSFT 55V 89A 8mOhm 44nC Log Lvl
      IRLU3636-701PBF

      Mfr.#: IRLU3636-701PBF

      OMO.#: OMO-IRLU3636-701PBF-1190

      		 Neu und Original
      IRLU3714Z

      Mfr.#: IRLU3714Z

      OMO.#: OMO-IRLU3714Z-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 20V 37A I-PAK
      IRLU3105PBF

      Mfr.#: IRLU3105PBF

      OMO.#: OMO-IRLU3105PBF-1190

      		 MOSFET, N, 55V, 25A, I-PAK
      IRLU3103PBF

      Mfr.#: IRLU3103PBF

      OMO.#: OMO-IRLU3103PBF-INFINEON-TECHNOLOGIES

      		 Darlington Transistors MOSFET MOSFT 30V 46A 19mOhm 33.3nC LogLvl
      IRLU3715ZPBF

      Mfr.#: IRLU3715ZPBF

      OMO.#: OMO-IRLU3715ZPBF-INFINEON-TECHNOLOGIES

      		 IGBT Transistors MOSFET MOSFT 20V 49A 11mOhm 7.2nC Qg log lvl
      IRLU3714ZPBF

      Mfr.#: IRLU3714ZPBF

      OMO.#: OMO-IRLU3714ZPBF-INFINEON-TECHNOLOGIES

      		 IGBT Transistors MOSFET MOSFT 20V 37A 15mOhm 4.7nC Qg log lvl
      IRLU3303PBF

      Mfr.#: IRLU3303PBF

      OMO.#: OMO-IRLU3303PBF-INFINEON-TECHNOLOGIES

      		 IGBT Transistors MOSFET MOSFT 30V 33A 31mOhm 17.3nC LogLvl
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5500
      Menge eingeben:
      Der aktuelle Preis von IRLU3103PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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