SI5904DC-T1-E3

SI5904DC-T1-E3
Mfr. #:
SI5904DC-T1-E3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET RECOMMENDED ALT 78-SI5908DC-T1-GE3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI5904DC-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI5904DC-T1-E3 DatasheetSI5904DC-T1-E3 Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
ChipFET-8
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
3.05 mm
Serie:
SI5
Breite:
1.65 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SI5904DC-E3
Gewichtseinheit:
0.002998 oz
Tags
SI5904DC-T, SI5904, SI590, SI59, SI5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 20V 3.1A 8-Pin Chip FET T/R
***i-Key
MOSFET 2N-CH 20V 3.1A 1206-8
***ser
Dual MOSFETs 20V 4.2A 2.1W
***
DUAL N-CH 2.5V (G-S) RATED
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:4200mA; On Resistance, Rds(on):0.134ohm; Rds(on) Test Voltage, Vgs:12V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, DUAL N CH, 20V, 3.1A, 1206; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:2.1W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:1206; No. of Pins:8; MSL:-
Teil # Mfg. Beschreibung Aktie Preis
SI5904DC-T1-E3
DISTI # SI5904DC-T1-E3TR-ND
Vishay SiliconixMOSFET 2N-CH 20V 3.1A 1206-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SI5904DC-T1-E3
    DISTI # SI5904DC-T1-E3CT-ND
    Vishay SiliconixMOSFET 2N-CH 20V 3.1A 1206-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SI5904DC-T1-E3
      DISTI # SI5904DC-T1-E3DKR-ND
      Vishay SiliconixMOSFET 2N-CH 20V 3.1A 1206-8
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SI5904DC-T1-E3
        DISTI # 781-SI5904DC-E3
        Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SI5908DC-T1-GE3
        RoHS: Compliant
        0
          SI5904DC-T1
          DISTI # 781-SI5904DC
          Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SI5908DC-T1-GE3
          RoHS: Not compliant
          0
            SI5904DC-T1-E3Vishay Intertechnologies 66
            • 32:$7.4000
            • 10:$8.0000
            • 1:$12.0000
            Bild Teil # Beschreibung
            SI5904DC-T1-E3

            Mfr.#: SI5904DC-T1-E3

            OMO.#: OMO-SI5904DC-T1-E3

            MOSFET RECOMMENDED ALT 78-SI5908DC-T1-GE3
            SI5904DC-T1-GE3

            Mfr.#: SI5904DC-T1-GE3

            OMO.#: OMO-SI5904DC-T1-GE3

            MOSFET DUAL N-CH 2.5V (G-S) RATED MOSFET
            SI5904DC

            Mfr.#: SI5904DC

            OMO.#: OMO-SI5904DC-1190

            Neu und Original
            SI5904DC-T1

            Mfr.#: SI5904DC-T1

            OMO.#: OMO-SI5904DC-T1-1190

            MOSFET RECOMMENDED ALT 78-SI5908DC-T1-GE3
            SI5904DC-T1-E3

            Mfr.#: SI5904DC-T1-E3

            OMO.#: OMO-SI5904DC-T1-E3-VISHAY

            MOSFET 2N-CH 20V 3.1A 1206-8
            SI5904DC-T1-GE3

            Mfr.#: SI5904DC-T1-GE3

            OMO.#: OMO-SI5904DC-T1-GE3-VISHAY

            MOSFET 2N-CH 20V 3.1A 1206-8
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            5500
            Menge eingeben:
            Der aktuelle Preis von SI5904DC-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
            Beginnen mit
            Neueste Produkte
            • -12 V and -20 V P-Channel Gen III MOSFETs
              Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
            • DG2788A Dual DPDT / Quad SPDT Analog Switch
              Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
            • Compare SI5904DC-T1-E3
              SI5904DCT1 vs SI5904DCT1E3 vs SI5904DCT1GE3
            • Smart Load Switches
              Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
            • SUM70101EL 100 V P-Channel MOSFET
              Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
            • DGQ2788A AEC-Q100 Qualified Analog Switch
              The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
            Top