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STP25NM60ND

STP25NM60ND
Mfr. #:
STP25NM60ND
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-channel 600V, 21A FDMesh II
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STP25NM60ND Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STP25NM60ND Mehr Informationen STP25NM60ND Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
21 A
Rds On - Drain-Source-Widerstand:
160 mOhms
Vgs - Gate-Source-Spannung:
25 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
160 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
9.15 mm
Länge:
10.4 mm
Serie:
STB25NM60N
Transistortyp:
1 N-Channel
Breite:
4.6 mm
Marke:
STMicroelectronics
Abfallzeit:
40 ns
Produktart:
MOSFET
Anstiegszeit:
30 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
50 ns
Typische Einschaltverzögerungszeit:
60 ns
Gewichtseinheit:
0.011640 oz
Tags
STP25NM60N, STP25NM6, STP25NM, STP25N, STP25, STP2, STP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
N-Channel MOSFET, 21 A, 600 V, 3-Pin TO-220 STMicroelectronics STP25NM60ND
***ure Electronics
N-Channel 600 V 0.16 Ohm Flange Mount FDmesh™ II Power MosFet - TO-220
***et Europe
Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220 Tube
***ponent Electronics
TRANSISTOR MOSFET 600V 21A TO-220
***ied Electronics & Automation
MOSFET N-Channel 600V 21A TO220
***i-Key
MOSFET N-CH 600V 21A TO-220
***ronik
N-CH 600V 21A 160mOhm TO220-3
***ark
Mosfet, N Ch, 600V, 21A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.13Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pins Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 600V, 21A, TO 220; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:160W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)
***nell
MOSFET, CANALE N, 600V, 21A, TO 220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:21A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.13ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:160W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
Teil # Mfg. Beschreibung Aktie Preis
STP25NM60ND
DISTI # 497-8446-5-ND		STMicroelectronicsMOSFET N-CH 600V 21A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    STP25NM60ND
    DISTI # STP25NM60ND    		STMicroelectronicsTrans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220 Tube (Alt: STP25NM60ND)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1:€5.8596
    • 25:€5.5518
    • 100:€4.4574
    • 250:€4.0698
    • 500:€4.0584
    • 1000:€4.0470
    • 2000:€4.0356
    STP25NM60ND
    DISTI # 511-STP25NM60ND    		STMicroelectronicsMOSFET N-channel 600V, 21A FDMesh II
    RoHS: Compliant    		0
    • 1:$6.8700
    • 10:$6.2100
    • 25:$5.9200
    • 100:$5.1400
    • 250:$4.9100
    • 500:$4.4700
    • 1000:$3.9000
    • 2000:$3.7500
    STP25NM60NDSTMicroelectronics 730
      STP25NM60NDSTMicroelectronics 
      RoHS: Compliant      		Europe - 100
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        Verfügbarkeit
        Aktie:
        990
        Auf Bestellung:
        2973
        Menge eingeben:
        Der aktuelle Preis von STP25NM60ND dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        6,87 $
        6,87 $
        10
        6,21 $
        62,10 $
        25
        5,92 $
        148,00 $
        100
        5,14 $
        514,00 $
        250
        4,91 $
        1 227,50 $
        500
        4,47 $
        2 235,00 $
        1000
        3,90 $
        3 900,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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