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IXFB52N90P

IXFB52N90P
Mfr. #:
IXFB52N90P
Hersteller:
Littelfuse
Beschreibung:
MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFB52N90P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFB52N90P DatasheetIXFB52N90P Datasheet (P4)
ECAD Model:
Mehr Informationen:
IXFB52N90P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
PLUS-264-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
900 V
Id - Kontinuierlicher Drainstrom:
52 A
Rds On - Drain-Source-Widerstand:
160 mOhms
Vgs th - Gate-Source-Schwellenspannung:
6.5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
308 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.25 kW
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Höhe:
26.59 mm
Länge:
20.29 mm
Serie:
IXFB52N90
Transistortyp:
1 N-Channel
Breite:
5.31 mm
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
35 S
Abfallzeit:
42 ns
Produktart:
MOSFET
Anstiegszeit:
80 ns
Werkspackungsmenge:
25
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
95 ns
Typische Einschaltverzögerungszeit:
63 ns
Gewichtseinheit:
0.373904 oz
Tags
IXFB, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ment14 APAC
MOSFET,N CH,900V,52A,PLUS264
***th Star Micro
MOSFET N-CH TO-264
***ark
N Channel Polar Power Mosfet, Hiperfet, 900V, 52A, Plus264; Transistor Polarity:n Channel; Continuous Drain Current Id:52A; Drain Source Voltage Vds:900V; On Resistance Rds(On):0.16Ohm; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pinsrohs Compliant: Yes
***nell
MOSFET,N CH,900V,52A,PLUS264; Transistor Polarity:N Channel; Current Id Max:52A; Drain Source Voltage Vds:900V; On State Resistance:160mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:30V; Power Dissipation:1.25kW; Operating Temperature Range:-55°C to +150°C; No. of Pins:3
900V Polar HiPerFET Power MOSFETs
IXYS 900V Polar HiPerFET™ Power MOSFETs are available with drain current ratings from 10.5A to 56A and combine the advantages derived from the IXYS Polar Technology platform and HiPerFET process to provide improved power efficiency and reliability in demanding high-voltage conversion systems that require bus voltage operation of up to 700V. IXYS 900V Polar HiPerFET Power MOSFETs are tailored to minimize on-state resistance while maintaining low gate charge, resulting in a substantial reduction in conduction and switching losses. These IXYS devices feature a fast intrinsic diode for low reverse recovery charge and improved turn-off dV/dt immunity. These high reliability Polar HiPerFET Power MOSFETs are ideal for use in a variety of applications, including switch-mode / resonant-mode power supplies, DC/DC converters, laser drivers, and more.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXFB52N90P
DISTI # IXFB52N90P-ND		IXYS CorporationMOSFET N-CH TO-264
RoHS: Compliant
Min Qty: 25
Container: Tube		Temporarily Out of Stock
  • 25:$23.4684
IXFB52N90P
DISTI # 747-IXFB52N90P		IXYS CorporationMOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
RoHS: Compliant		0
  • 25:$21.3400
  • 50:$20.4300
  • 100:$19.8300
  • 250:$18.2000
IXFB52N90P
DISTI # 1829764		IXYS CorporationMOSFET,N CH,900V,52A,PLUS264
RoHS: Compliant		0
  • 1:£16.1400
  • 5:£15.9100
  • 10:£15.6900
  • 50:£15.4600
  • 100:£13.7700
Bild Teil # Beschreibung
IXFB50N80Q2

Mfr.#: IXFB50N80Q2

OMO.#: OMO-IXFB50N80Q2

 MOSFET 50 Amps 800V
IXFB52N90P

Mfr.#: IXFB52N90P

OMO.#: OMO-IXFB52N90P

 MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
IXFB50N80Q2

Mfr.#: IXFB50N80Q2

OMO.#: OMO-IXFB50N80Q2-IXYS-CORPORATION

 MOSFET 50 Amps 800V
IXFB52N90P

Mfr.#: IXFB52N90P

OMO.#: OMO-IXFB52N90P-IXYS-CORPORATION

 MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1500
Menge eingeben:
Der aktuelle Preis von IXFB52N90P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
25
21,34 $
533,50 $
50
20,43 $
1 021,50 $
100
19,83 $
1 983,00 $
250
18,20 $
4 550,00 $
500
17,32 $
8 660,00 $
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