SI3529DV-T1-GE3

SI3529DV-T1-GE3
Mfr. #:
SI3529DV-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET RECOMMENDED ALT 781-SI3590DV-GE3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI3529DV-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI3529DV-T1-GE3 DatasheetSI3529DV-T1-GE3 Datasheet (P4-P6)SI3529DV-T1-GE3 Datasheet (P7-P9)SI3529DV-T1-GE3 Datasheet (P10-P12)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI3
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SI3529DV-GE3
Gewichtseinheit:
0.000705 oz
Tags
SI3529, SI352, SI35, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***iKey
MOSFETNPCH40V25A6TSOP
***ark
DUALNPCHANNELMOSFET40VTSOP
***nell
MOSFETNPCHDIODE40VTSOP6;TransistorPolarityNandPChannel;ContinuousDrainCurrentId25A;DrainSourceVoltageVds40V;OnResistanceRdson01ohm;RdsonTestVoltageVgs10V;ThresholdVoltageVgs3V;PowerDissipationPd115W;TransistorCaseStyleTSOP;NoofPins6Pins;OperatingTemperatureMax150C;ProductRange;AutomotiveQualificationStandard;MSLMSL1Unlimited;SVHCNoSVHC15Jun2015;ContinuousDrainCurrentIdNChannel25A;ContinuousDrainCurrentIdPChannel195A;CurrentIdMax225A;DrainSourceVoltageVdsNChannel40V;DrainSourceVoltageVdsPChannel40V;ModuleConfigurationDual;OnResistanceRdsonNChannel01ohm;OnResistanceRdsonPChannel0172ohm;OperatingTemperatureMin55C;OperatingTemperatureRange55Cto150C
Teil # Mfg. Beschreibung Aktie Preis
SI3529DV-T1-GE3
DISTI # SI3529DV-T1-GE3-ND
Vishay SiliconixMOSFET N/P-CH 40V 2.5A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SI3529DV-T1-GE3
    DISTI # 781-SI3529DV-GE3
    Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI3590DV-GE3
    RoHS: Compliant
    0
      Bild Teil # Beschreibung
      SI3529DV-T1-GE3

      Mfr.#: SI3529DV-T1-GE3

      OMO.#: OMO-SI3529DV-T1-GE3

      MOSFET RECOMMENDED ALT 781-SI3590DV-GE3
      SI3529DV

      Mfr.#: SI3529DV

      OMO.#: OMO-SI3529DV-1190

      Neu und Original
      SI3529DV-T1-GE3

      Mfr.#: SI3529DV-T1-GE3

      OMO.#: OMO-SI3529DV-T1-GE3-VISHAY

      MOSFET N/P-CH 40V 2.5A 6-TSOP
      SI3529DV-T1-E3

      Mfr.#: SI3529DV-T1-E3

      OMO.#: OMO-SI3529DV-T1-E3-VISHAY

      MOSFET N/P-CH 40V 2.5A 6-TSOP
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3500
      Menge eingeben:
      Der aktuelle Preis von SI3529DV-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Beginnen mit
      Neueste Produkte
      Top