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SI3417DV-T1-GE3

SI3417DV-T1-GE3
Mfr. #:
SI3417DV-T1-GE3
Hersteller:
Vishay
Beschreibung:
IGBT Transistors MOSFET -30V .0252ohm@-10V -8A P-Ch T-FET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI3417DV-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI3417DV-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Gewichtseinheit
0.000705 oz
Montageart
SMD/SMT
Handelsname
TrenchFET
Paket-Koffer
TSOP-6
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 P-Channel
Pd-Verlustleistung
4.2 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
16 ns
Anstiegszeit
35 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
8 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Vgs-th-Gate-Source-Threshold-Voltage
- 3 V
Rds-On-Drain-Source-Widerstand
30 mOhms
Transistor-Polarität
P-Kanal
Typische-Ausschaltverzögerungszeit
40 ns
Typische-Einschaltverzögerungszeit
42 ns
Qg-Gate-Ladung
32 nC
Vorwärts-Transkonduktanz-Min
23 S
Tags
SI341, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
P-Channel 30 V 29 mOhm Surface Mount Enhancement Mode Mosfet - SOT-223
***ark
P-Ch MOSFET TSOP-6 Copper 30V 25.2mohm @ 10V
***ical
Trans MOSFET P-CH 30V 7.3A 6-Pin TSOP T/R
***et Europe
Trans MOSFET P-CH 30V 8A 6-Pin TSOP T/R
***et
P-CH MOSFET TSOP-6 COPPER 30V 25.2MOHM @ 10V
***i-Key
MOSFET P-CH 30V 8A TSOP-6
***ronik
P-CH -30V -8A 25,2mOhm TSOP-6
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI3417DV-T1-GE3
DISTI # V72:2272_09216613		Vishay IntertechnologiesTrans MOSFET P-CH 30V 7.3A 6-Pin TSOP T/R
RoHS: Compliant		1206
  • 1000:$0.1376
  • 500:$0.1805
  • 250:$0.2153
  • 100:$0.2175
  • 25:$0.2952
  • 10:$0.2980
  • 1:$0.4084
SI3417DV-T1-GE3
DISTI # SI3417DV-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 30V 8A TSOP-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		210In Stock
  • 1000:$0.1743
  • 500:$0.2256
  • 100:$0.3076
  • 10:$0.4100
  • 1:$0.4900
SI3417DV-T1-GE3
DISTI # SI3417DV-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 30V 8A TSOP-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		210In Stock
  • 1000:$0.1743
  • 500:$0.2256
  • 100:$0.3076
  • 10:$0.4100
  • 1:$0.4900
SI3417DV-T1-GE3
DISTI # SI3417DV-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 30V 8A TSOP-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.1543
SI3417DV-T1-GE3
DISTI # 26717986		Vishay IntertechnologiesTrans MOSFET P-CH 30V 7.3A 6-Pin TSOP T/R
RoHS: Compliant		1206
  • 1000:$0.1376
  • 500:$0.1805
  • 250:$0.2153
  • 100:$0.2175
  • 56:$0.2952
SI3417DV-T1-GE3
DISTI # SI3417DV-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 8A 6-Pin TSOP T/R (Alt: SI3417DV-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel		Asia - 30000
  • 3000:$1.5000
  • 6000:$1.0345
  • 9000:$0.7692
  • 15000:$0.6250
  • 30000:$0.5660
  • 75000:$0.5454
  • 150000:$0.5263
SI3417DV-T1-GE3
DISTI # SI3417DV-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3417DV-T1-GE3)
RoHS: Not Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 6000:$0.1309
  • 12000:$0.1269
  • 18000:$0.1219
  • 30000:$0.1189
  • 60000:$0.1159
SI3417DV-T1-GE3
DISTI # 67X6854		Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET0
  • 1:$0.1900
  • 5000:$0.1800
  • 10000:$0.1570
  • 20000:$0.1400
  • 30000:$0.1290
  • 50000:$0.1170
SI3417DV-T1-GE3
DISTI # 78-SI3417DV-T1-GE3		Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs TSOP-6
RoHS: Compliant		0
  • 1:$0.4300
  • 10:$0.3270
  • 100:$0.2430
  • 500:$0.2000
  • 1000:$0.1540
  • 3000:$0.1410
  • 6000:$0.1320
  • 9000:$0.1230
SI3417DV-T1-GE3
DISTI # C1S803605131865		Vishay IntertechnologiesMOSFETs
RoHS: Compliant		1206
  • 250:$0.2153
  • 100:$0.2175
  • 25:$0.2952
  • 10:$0.2980
Bild Teil # Beschreibung
SI3417DV-T1-GE3

Mfr.#: SI3417DV-T1-GE3

OMO.#: OMO-SI3417DV-T1-GE3

 MOSFET -30V Vds 20V Vgs TSOP-6
SI3417DV-T1-GE3

Mfr.#: SI3417DV-T1-GE3

OMO.#: OMO-SI3417DV-T1-GE3-VISHAY

 IGBT Transistors MOSFET -30V .0252ohm@-10V -8A P-Ch T-FET
SI3417DV-T1-GE3-CUT TAPE

Mfr.#: SI3417DV-T1-GE3-CUT TAPE

OMO.#: OMO-SI3417DV-T1-GE3-CUT-TAPE-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von SI3417DV-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,17 $
0,17 $
10
0,17 $
1,65 $
100
0,16 $
15,65 $
500
0,15 $
73,90 $
1000
0,14 $
139,10 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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