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FQD2N90TF

FQD2N90TF
Mfr. #:
FQD2N90TF
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 900V N-Channel QFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQD2N90TF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
900 V
Id - Kontinuierlicher Drainstrom:
1.7 A
Rds On - Drain-Source-Widerstand:
7.2 Ohms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
2.39 mm
Länge:
6.73 mm
Serie:
FQD2N90
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
6.22 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
1.7 S
Abfallzeit:
30 ns
Produktart:
MOSFET
Anstiegszeit:
35 ns
Werkspackungsmenge:
2000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
20 ns
Typische Einschaltverzögerungszeit:
15 ns
Gewichtseinheit:
0.009184 oz
Tags
FQD2N90T, FQD2N9, FQD2N, FQD2, FQD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel QFET® MOSFET 900V, 1.7A, 7.2Ω
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:900V; Continuous Drain Current, Id:1.7A; On Resistance, Rds(on):7.2ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:5V ;RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
FQD2N90TF
DISTI # FQD2N90TFTR-ND		ON SemiconductorMOSFET N-CH 900V 1.7A DPAK
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Limited Supply - Call
    FQD2N90TF
    DISTI # FQD2N90TFCT-ND    		ON SemiconductorMOSFET N-CH 900V 1.7A DPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      FQD2N90TF
      DISTI # FQD2N90TFDKR-ND      		ON SemiconductorMOSFET N-CH 900V 1.7A DPAK
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        FQD2N90TF
        DISTI # FQD2N90TF        		ON SemiconductorTrans MOSFET N-CH 900V 1.7A 3-Pin(2+Tab) DPAK T/R - Bulk (Alt: FQD2N90TF)
        RoHS: Compliant
        Min Qty: 596
        Container: Bulk        		Americas - 0
        • 5960:$0.5179
        • 2980:$0.5309
        • 1788:$0.5379
        • 1192:$0.5449
        • 596:$0.5489
        FQD2N90TF
        DISTI # 512-FQD2N90TF        		ON SemiconductorMOSFET 900V N-Channel QFET
        RoHS: Compliant        		0
          FQD2N90TFFairchild Semiconductor CorporationPower Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
          RoHS: Compliant          		1054
          • 1000:$0.5500
          • 500:$0.5800
          • 100:$0.6100
          • 25:$0.6300
          • 1:$0.6800
          FQD2N90TFFreescale Semiconductor 1444
          • 477:$0.3640
          • 87:$0.4200
          • 1:$1.4000
          FQD2N90TFFairchild Semiconductor Corporation 1805
          • 5:$1.0500
          • 21:$0.6825
          • 75:$0.3938
          • 255:$0.3360
          • 552:$0.2940
          • 1311:$0.2730
          Bild Teil # Beschreibung
          FQD2N90TF

          Mfr.#: FQD2N90TF

          OMO.#: OMO-FQD2N90TF

          		 MOSFET 900V N-Channel QFET
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          Mfr.#: FQD20N06C

          OMO.#: OMO-FQD20N06C-1190

          		 Neu und Original
          FQD20N06TM-NL

          Mfr.#: FQD20N06TM-NL

          OMO.#: OMO-FQD20N06TM-NL-1190

          		 Neu und Original
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          Mfr.#: FQD24N08TF

          OMO.#: OMO-FQD24N08TF-ON-SEMICONDUCTOR

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          FQD2N40

          Mfr.#: FQD2N40

          OMO.#: OMO-FQD2N40-1190

          		 Neu und Original
          FQD2N50TM

          Mfr.#: FQD2N50TM

          OMO.#: OMO-FQD2N50TM-ON-SEMICONDUCTOR

          		 MOSFET N-CH 500V 1.6A DPAK
          FQD2N60CTF-NL

          Mfr.#: FQD2N60CTF-NL

          OMO.#: OMO-FQD2N60CTF-NL-1190

          		 Neu und Original
          FQD2N60TF

          Mfr.#: FQD2N60TF

          OMO.#: OMO-FQD2N60TF-ON-SEMICONDUCTOR

          		 MOSFET N-CH 600V 2A DPAK
          FQD2N80

          Mfr.#: FQD2N80

          OMO.#: OMO-FQD2N80-1190

          		 Neu und Original
          FQD2N60TM

          Mfr.#: FQD2N60TM

          OMO.#: OMO-FQD2N60TM-ON-SEMICONDUCTOR

          		 MOSFET N-CH 600V 2A DPAK
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          5000
          Menge eingeben:
          Der aktuelle Preis von FQD2N90TF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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