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IRFP4321PBF

IRFP4321PBF
Mfr. #:
IRFP4321PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFT 150V 78A 15.5mOhm 71nC Qg
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFP4321PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFP4321PBF DatasheetIRFP4321PBF Datasheet (P4-P6)IRFP4321PBF Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
150 V
Id - Kontinuierlicher Drainstrom:
78 A
Rds On - Drain-Source-Widerstand:
12 mOhms
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
71 nC
Pd - Verlustleistung:
310 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
20.7 mm
Länge:
15.87 mm
Transistortyp:
1 N-Channel
Breite:
5.31 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
400
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001575756
Gewichtseinheit:
1.340411 oz
Tags
IRFP4321P, IRFP432, IRFP43, IRFP4, IRFP, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
IRFP4321PBF N-channel MOSFET Transistor, 78 A, 150 V, 3-Pin TO-247AC
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: TO-247 Power dissipation: 310 W
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ure Electronics
Single N-Channel 150 V 15.5 Ohm 110 nC HEXFET® Power Mosfet - TO-247AC
***ment14 APAC
MOSFET, N, 150V, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:78A; Drain Source Voltage Vds:150V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:310mW; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4321; Current Id Max:78A; Package / Case:TO-247AC; Power Dissipation Pd:310mW; Pulse Current Idm:330A; SMD Marking:310; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***trelec
MOSFET Operating temperature: -40...175 °C Housing type: TO-247 Power dissipation: 330 W
***ure Electronics
Single N-Channel 200 V 25 mOhm 70 nC HEXFET® Power Mosfet - TO-247AC
*** Source Electronics
Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 200V 65A TO-247AC
*** Stop Electro
Power Field-Effect Transistor, 65A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
MOSFET, N, 200V, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:330W; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:46A; Cont Current Id @ 25°C:65A; Current Id Max:65A; Package / Case:TO-247; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:260A; Rth:0.45; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:240V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
*** Electronics
MOSFET Operating temperature: -40...+175 °C Housing type: TO-247 Power dissipation: 150 W
***ineon SCT
250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-247AC package, TO247-3, RoHS
***(Formerly Allied Electronics)
MOSFET, N Ch., 250V, 44A, 46 MOHM, 72 NC QG, TO-247AC, Pb-Free
***ure Electronics
Single N-Channel 250 V 46 mOhm 110 nC HEXFET® Power Mosfet - TO-247AC
***ment14 APAC
MOSFET, N, 250V, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:300V; On Resistance Rds(on):38mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:310mW; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4229; Current Id Max:44A; Package / Case:TO-247AC; Power Dissipation Pd:310mW; Pulse Current Idm:180A; SMD Marking:310; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 55 V 5.3 mOhm 120 nC HEXFET® Power Mosfet - TO-247-3AC
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 55V, 160A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:55V; On Resistance Rds(on):5.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:95A; Junction to Case Thermal Resistance A:0.49°C/W; On State resistance @ Vgs = 10V:5.3ohm; Package / Case:TO-247AC; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:640A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 95 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 5.3 / Gate-Source Voltage V = 20 / Fall Time ns = 150 / Rise Time ns = 160 / Turn-OFF Delay Time ns = 140 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 310
***ure Electronics
IRFP21N60L Series N-Channel 600 V 320 mOhm 330 W Power Mosfet - TO-247AC
***nell
MOSFET, N, 600V, 21A, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.32ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 21A I(D), 600V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ure Electronics
Single N-Channel 60 V 0.014 Ohms Flange Mount Power Mosfet - TO-247
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:70A; On Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:10V; Drain Source On Resistance @ 10V:14mohm RoHS Compliant: Yes
***nell
MOSFET, N, 60V, 70A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:70A; Resistance, Rds On:0.014ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:360A; Power Dissipation:230W; Power, Pd:230W; Resistance, Rds on @ Vgs = 10V:14ohm; Thermal Resistance, Junction to Case A:0.65°C/W; Voltage, Vds Max:60V
***(Formerly Allied Electronics)
SIHG20N50C-E3 N-channel MOSFET Transistor; 20 A; 500 V; 3-Pin TO-247AC
***ure Electronics
SiHG20N50C Series 500 V 20 A 270 mOhm Power MOSFET - TO-247AC
***ment14 APAC
MOSFET, N-CH, 500V, 20A, TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:500V; On Resistance Rds(on):225mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:292W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:20A; Power Dissipation Pd:292W; Voltage Vgs Max:30V
Teil # Mfg. Beschreibung Aktie Preis
IRFP4321PBF
DISTI # V99:2348_13892477		Infineon Technologies AGTrans MOSFET N-CH 150V 78A 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant		400
  • 2500:$1.3919
  • 1000:$1.4729
  • 500:$1.7200
  • 250:$1.9110
  • 100:$2.0130
  • 10:$2.2670
  • 1:$2.6220
IRFP4321PBF
DISTI # IRFP4321PBF-ND		Infineon Technologies AGMOSFET N-CH 150V 78A TO-247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		4084In Stock
  • 1200:$2.1753
  • 800:$2.3306
  • 400:$2.8744
  • 10:$3.8840
  • 1:$4.3500
IRFP4321PBF
DISTI # 30177189		Infineon Technologies AGTrans MOSFET N-CH 150V 78A 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant		660
  • 300:$1.8528
  • 50:$2.1792
  • 8:$2.3712
IRFP4321PBF
DISTI # 31230656		Infineon Technologies AGTrans MOSFET N-CH 150V 78A 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant		400
  • 250:$1.9110
  • 100:$2.0130
  • 10:$2.2660
  • 4:$2.6220
IRFP4321PBF
DISTI # IRFP4321PBF		Infineon Technologies AGTrans MOSFET N-CH 150V 78A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRFP4321PBF)
RoHS: Compliant
Min Qty: 400
Container: Tube		Americas - 30
  • 400:$2.9900
  • 402:$2.9900
  • 802:$2.3900
  • 2000:$2.2900
  • 4000:$2.2900
IRFP4321PBF
DISTI # 61M6840		Infineon Technologies AGMOSFET Transistor, N Channel, 78 A, 150 V, 12 mohm, 10 V, 5 V RoHS Compliant: Yes0
  • 1:$3.9800
  • 10:$3.4300
  • 25:$3.2900
  • 50:$3.1500
  • 100:$3.0100
  • 250:$2.8700
  • 500:$2.6100
IRFP4321PBF
DISTI # 70017931		Infineon Technologies AGMOSFET,N Ch.,150V,78A,15.5 MOHM,71NC QG,TO-247AC,Pb-Free
RoHS: Compliant		0
  • 225:$3.8600
IRFP4321PBFInfineon Technologies AGSingle N-Channel 150 V 15.5 Ohm 110 nC HEXFET Power Mosfet - TO-247AC
RoHS: Compliant		456Tube
  • 5:$2.2600
  • 50:$2.0900
  • 300:$1.7900
IRFP4321PBF
DISTI # 942-IRFP4321PBF		Infineon Technologies AGMOSFET MOSFT 150V 78A 15.5mOhm 71nC Qg
RoHS: Compliant		525
  • 1:$3.7400
  • 10:$3.1800
  • 100:$2.7600
  • 250:$2.6200
  • 500:$2.3500
IRFP4321PBF
DISTI # 6887005		Infineon Technologies AGMOSFET N-CHANNEL 150V 78A HEXFET TO247AC, PK564
  • 2:£2.9900
  • 12:£2.6850
IRFP4321PBF
DISTI # IRFP4321PBF		Infineon Technologies AGN-Ch 150V 78A 310W 0,0155R TO247AC
RoHS: Compliant		295
  • 5:€2.1100
  • 25:€1.5100
  • 100:€1.3100
  • 200:€1.2600
IRFP4321PBF
DISTI # TMOSP12224		Infineon Technologies AGN-CH 150V 78A 15,5mOhm TO247
RoHS: Compliant		Stock DE - 0Stock US - 0
  • 400:$1.7300
IRFP4321PBF
DISTI # C1S327400166292		Infineon Technologies AGTrans MOSFET N-CH 150V 78A 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant		2459
  • 100:$1.9300
  • 50:$2.1700
  • 10:$2.5700
  • 1:$3.6300
IRFP4321PBF
DISTI # C1S322000570340		Infineon Technologies AGTrans MOSFET N-CH 150V 78A 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant		660
  • 500:$1.7600
  • 100:$2.3100
  • 50:$2.5100
  • 10:$3.0600
  • 1:$4.7100
IRFP4321PBF
DISTI # 1436965		Infineon Technologies AGMOSFET, N, 150V, TO-247AC
RoHS: Compliant		0
  • 1:$5.9300
  • 10:$5.0300
  • 100:$4.3700
  • 250:$4.1500
  • 500:$3.7200
  • 1000:$3.1300
  • 2500:$2.9800
  • 5000:$2.8700
IRFP4321PBF
DISTI # 1436965		Infineon Technologies AGMOSFET, N, 150V, TO-247AC
RoHS: Compliant		0
  • 1:£3.0200
  • 10:£2.3700
  • 100:£2.0100
  • 250:£1.9200
  • 500:£1.8000
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Verfügbarkeit
Aktie:
324
Auf Bestellung:
2307
Menge eingeben:
Der aktuelle Preis von IRFP4321PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,73 $
3,73 $
10
3,17 $
31,70 $
100
2,75 $
275,00 $
250
2,61 $
652,50 $
500
2,34 $
1 170,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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