SI3973DV-T1-GE3

SI3973DV-T1-GE3
Mfr. #:
SI3973DV-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
RF Bipolar Transistors MOSFET 12V 2.7A 1.15W 87mohm @ 4.5V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI3973DV-T1-GE3 Datenblatt
Die Zustellung:
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Zahlung:
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ECAD Model:
Mehr Informationen:
SI3973DV-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Vishay / Siliconix
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Teil-Aliasnamen
SI3973DV-GE3
Gewichtseinheit
0.000705 oz
Montageart
SMD/SMT
Paket-Koffer
TSOP-6
Technologie
Si
Anzahl der Kanäle
2 Channel
Aufbau
Dual
Transistor-Typ
2 P-Channel
Pd-Verlustleistung
830 mW
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Vgs-Gate-Source-Spannung
8 V
ID-Dauer-Drain-Strom
2.4 A
Vds-Drain-Source-Breakdown-Voltage
- 12 V
Rds-On-Drain-Source-Widerstand
87 mOhms
Transistor-Polarität
P-Kanal
Tags
SI397, SI39, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI3973DV-T1-GE3
DISTI # 781-SI3973DV-GE3
Vishay IntertechnologiesMOSFET 12V 2.7A 1.15W 87mohm @ 4.5V
RoHS: Compliant
0
  • 3000:$0.3500
  • 6000:$0.3330
  • 9000:$0.3210
  • 24000:$0.3100
Bild Teil # Beschreibung
SI3973DV-T1-E3

Mfr.#: SI3973DV-T1-E3

OMO.#: OMO-SI3973DV-T1-E3

MOSFET 12V 2.7A 0.83W
SI3973DV-T1-GE3

Mfr.#: SI3973DV-T1-GE3

OMO.#: OMO-SI3973DV-T1-GE3

MOSFET 12V 2.7A 1.15W 87mohm @ 4.5V
SI3973DV-T1-E3

Mfr.#: SI3973DV-T1-E3

OMO.#: OMO-SI3973DV-T1-E3-317

RF Bipolar Transistors MOSFET 12V 2.7A 0.83W
SI3973DV-T1-GE3

Mfr.#: SI3973DV-T1-GE3

OMO.#: OMO-SI3973DV-T1-GE3-317

RF Bipolar Transistors MOSFET 12V 2.7A 1.15W 87mohm @ 4.5V
SI3973DV

Mfr.#: SI3973DV

OMO.#: OMO-SI3973DV-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1500
Menge eingeben:
Der aktuelle Preis von SI3973DV-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,46 $
0,46 $
10
0,44 $
4,42 $
100
0,42 $
41,85 $
500
0,40 $
197,65 $
1000
0,37 $
372,00 $
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