IPP410N30NAKSA1

IPP410N30NAKSA1
Mfr. #:
IPP410N30NAKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MV POWER MOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPP410N30NAKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
PG-TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
300 V
Id - Kontinuierlicher Drainstrom:
44 A
Rds On - Drain-Source-Widerstand:
41 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
65 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
300 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
52 S
Abfallzeit:
9 ns
Produktart:
MOSFET
Anstiegszeit:
9 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
43 ns
Typische Einschaltverzögerungszeit:
16 ns
Teil # Aliase:
IPP410N30N SP001082134
Gewichtseinheit:
0.211644 oz
Tags
IPP41, IPP4, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 300 V 41 mOhm 87 nC OptiMOS™ Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 300V 44A 3-Pin(3+Tab) TO-220 Tube
***ark
Mosfet, N-Ch, 300V, 44A, To-220; Transistor Polarity:n Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:44A; On Resistance Rds(On):0.036Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; No. Of Pins:3Pinsrohs Compliant: Yes
***ineon
The new OptiMOS 300V MOSFETs, incorporating fast diode technology, are especially optimized for body diode hard commutation. The devices not only demonstrate impressive on-state resistance (R DS(on)) and figure of merit (FOM), but also provide high system reliability through the lowest reverse recovery charge (Q rr) available on the market. With the new 300V OptiMOS series, Infineon brings a new level of performance in hard switching applications such as telecom, uninterruptible power supplies (UPS), industrial power supplies, DC-AC inverters and motor control. | Summary of Features: Fast diode technology; Industry best R DS(on) with more than 58% lower FOM; Hard commutation ruggedness; Optimized hard switching behavior | Benefits: Highest efficiency and power density; Board space and system cost reduction; High system reliability; Best switching performance; Easy-to-design products | Target Applications: Telecom; Uninterruptible power supplies; Industrial power supplies; DC-AC inverter; Motor control for 48-110V systems
Teil # Mfg. Beschreibung Aktie Preis
IPP410N30NAKSA1
DISTI # V99:2348_06377238
Infineon Technologies AGTrans MOSFET N-CH 300V 44A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
0
    IPP410N30NAKSA1
    DISTI # V36:1790_06377238
    Infineon Technologies AGTrans MOSFET N-CH 300V 44A 3-Pin(3+Tab) TO-220 Tube
    RoHS: Compliant
    0
    • 500000:$3.7160
    • 250000:$3.7210
    • 50000:$4.5040
    • 5000:$6.1500
    • 500:$6.4400
    IPP410N30NAKSA1
    DISTI # IPP410N30NAKSA1-ND
    Infineon Technologies AGMOSFET N-CH TO220-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    463In Stock
    • 500:$5.1917
    • 100:$5.9621
    • 25:$6.8664
    • 10:$7.2010
    • 1:$7.9700
    IPP410N30NAKSA1
    DISTI # IPP410N30NAKSA1
    Infineon Technologies AGMV POWER MOS - Rail/Tube (Alt: IPP410N30NAKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube
    Americas - 0
    • 5000:$3.9900
    • 3000:$4.0900
    • 2000:$4.1900
    • 1000:$4.3900
    • 500:$4.4900
    IPP410N30NAKSA1
    DISTI # SP001082134
    Infineon Technologies AGMV POWER MOS (Alt: SP001082134)
    RoHS: Compliant
    Min Qty: 1
    Europe - 0
    • 1000:€3.3900
    • 500:€3.6900
    • 100:€3.7900
    • 50:€3.9900
    • 25:€4.0900
    • 10:€4.2900
    • 1:€4.6900
    IPP410N30NAKSA1
    DISTI # 13AC9073
    Infineon Technologies AGMOSFET, N-CH, 300V, 44A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:44A,Drain Source Voltage Vds:300V,On Resistance Rds(on):0.036ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes60
    • 500:$4.9900
    • 250:$5.4700
    • 100:$5.7300
    • 50:$6.1700
    • 25:$6.6100
    • 10:$6.9200
    • 1:$7.6600
    IPP410N30NAKSA1
    DISTI # 726-IPP410N30NAKSA1
    Infineon Technologies AGMOSFET MV POWER MOS
    RoHS: Compliant
    955
    • 1:$7.5800
    • 10:$6.8500
    • 25:$6.5400
    • 100:$5.6700
    • 250:$5.4200
    • 500:$4.9400
    • 1000:$4.3000
    IPP410N30NAKSA1
    DISTI # 2725866
    Infineon Technologies AGMOSFET, N-CH, 300V, 44A, TO-220
    RoHS: Compliant
    50
    • 500:$7.8300
    • 100:$8.9900
    • 25:$10.3500
    • 10:$10.8600
    • 1:$12.0100
    IPP410N30NAKSA1
    DISTI # 2725866
    Infineon Technologies AGMOSFET, N-CH, 300V, 44A, TO-22039
    • 100:£4.3600
    • 50:£4.7100
    • 10:£5.0400
    • 5:£5.8400
    • 1:£6.3700
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    Schottky Diodes & Rectifiers SIC TO220 SBD 10A 650V
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    OMO.#: OMO-FFSP1665A

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    FFSP0665A

    Mfr.#: FFSP0665A

    OMO.#: OMO-FFSP0665A

    Schottky Diodes & Rectifiers SIC TO220 SBD 6A 650V
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    OMO.#: OMO-FFSP0865A

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    OMO.#: OMO-TPS54302DDCR

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    OMO.#: OMO-74437529203221

    Fixed Inductors WE-HCF 2920 220uH 20% 8.8A 36.45mOhm
    Verfügbarkeit
    Aktie:
    908
    Auf Bestellung:
    2891
    Menge eingeben:
    Der aktuelle Preis von IPP410N30NAKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    7,58 $
    7,58 $
    10
    6,85 $
    68,50 $
    25
    6,54 $
    163,50 $
    100
    5,67 $
    567,00 $
    250
    5,42 $
    1 355,00 $
    500
    4,94 $
    2 470,00 $
    1000
    4,30 $
    4 300,00 $
    2500
    4,14 $
    10 350,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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