IXFQ28N60P3

IXFQ28N60P3
Mfr. #:
IXFQ28N60P3
Hersteller:
Littelfuse
Beschreibung:
MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFQ28N60P3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFQ28N60P3 DatasheetIXFQ28N60P3 Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFQ28N60P3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-3P-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
28 A
Rds On - Drain-Source-Widerstand:
260 mOhms
Vgs th - Gate-Source-Schwellenspannung:
5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
50 nC
Pd - Verlustleistung:
695 W
Aufbau:
Single
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
IXFQ28N60
Transistortyp:
1 N-Channel
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
30 S, 18 S
Abfallzeit:
19 ns
Produktart:
MOSFET
Anstiegszeit:
18 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.056438 oz
Tags
IXFQ2, IXFQ, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
PolarP3™ Power MOSFETs
IXYS PolarP3™ HiPerFET product family is the latest addition to IXYS' benchmark high-performance Polar-Series product line. These MOSFETs combine IXYS' latest PolarP3™ Technology platform and HiPerFET™ process to bring superior performance and energy savings to a variety of applications. Featuring low on state resistances and extremely low gate charge values, IXYS PolarP3™ HiPerFETs enable the development of more efficient power subsystems in applications such as switch/resonant-mode power supplies and UPS' for telecommunication, base stations, servers and server farms and energy efficient consumer appliances. Other applications that will benefit from the MOSFETs include power factor correction circuits, motor drives, lamp ballasts, laser drivers, DC-DC converters, battery chargers, robotic and servo control.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXFQ28N60P3
DISTI # IXFQ28N60P3-ND
IXYS CorporationMOSFET N-CH 600V 28A TO3P
RoHS: Compliant
Min Qty: 1
Container: Tube
59In Stock
  • 2520:$2.5760
  • 510:$3.0544
  • 120:$3.7720
  • 30:$4.1400
  • 10:$4.6000
  • 1:$5.1500
IXFQ28N60P3
DISTI # 02AC9819
IXYS CorporationMOSFET, N-CH, 600V, 28A, TO-3P,Transistor Polarity:N Channel,Continuous Drain Current Id:28A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.26ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation RoHS Compliant: Yes25
  • 500:$3.5500
  • 250:$3.7400
  • 100:$4.3800
  • 50:$4.5600
  • 25:$4.6500
  • 10:$5.3400
  • 1:$5.9800
IXFQ28N60P3
DISTI # 747-IXFQ28N60P3
IXYS CorporationMOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET
RoHS: Compliant
48
  • 1:$5.9200
  • 10:$5.2900
  • 25:$4.6000
  • 50:$4.5100
  • 100:$4.3400
  • 250:$3.7000
  • 500:$3.5100
  • 1000:$2.9600
  • 2500:$2.5400
IXFQ28N60P3
DISTI # 8024451P
IXYS CorporationMOSFET NCH 600V 28A POLAR3 HIPERFET TO3P, TU48
  • 120:£2.6900
  • 60:£2.9750
  • 30:£3.0400
  • 10:£3.1150
IXFQ28N60P3
DISTI # 2674766
IXYS CorporationMOSFET, N-CH, 600V, 28A, TO-3P
RoHS: Compliant
25
  • 510:$4.6400
  • 120:$5.7300
  • 30:$6.2800
  • 1:$7.8100
IXFQ28N60P3
DISTI # 2674766
IXYS CorporationMOSFET, N-CH, 600V, 28A, TO-3P
RoHS: Compliant
25
  • 500:£2.2600
  • 250:£2.5300
  • 100:£2.7800
  • 10:£3.0600
  • 1:£4.4600
Bild Teil # Beschreibung
STTH1210DI

Mfr.#: STTH1210DI

OMO.#: OMO-STTH1210DI

Rectifiers Ultrafast recovery high voltage diode
FKP1O132207F00JSSD

Mfr.#: FKP1O132207F00JSSD

OMO.#: OMO-FKP1O132207F00JSSD-1190

Film Capacitors 0.22 uF 1000 VDC 5%
STTH1210DI

Mfr.#: STTH1210DI

OMO.#: OMO-STTH1210DI-STMICROELECTRONICS

DIODE GEN PURP 1KV 12A TO220INS
Verfügbarkeit
Aktie:
46
Auf Bestellung:
2029
Menge eingeben:
Der aktuelle Preis von IXFQ28N60P3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
5,92 $
5,92 $
10
5,29 $
52,90 $
25
4,60 $
115,00 $
50
4,51 $
225,50 $
100
4,34 $
434,00 $
250
3,70 $
925,00 $
500
3,51 $
1 755,00 $
1000
2,96 $
2 960,00 $
2500
2,54 $
6 350,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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