OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

AOTS40B65H1

AOTS40B65H1
Mfr. #:
AOTS40B65H1
Hersteller:
Alpha & Omega Semiconductor Inc
Beschreibung:
IGBT 650V 40A TO220
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AOTS40B65H1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
AOTS40B65H1 DatasheetAOTS40B65H1 Datasheet (P4-P6)AOTS40B65H1 Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Alpha & Omega Semiconductor Inc.
Produktkategorie
IGBTs - Single
Serie
Alpha-IGBT
Verpackung
Rohr
Paket-Koffer
TO-220-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-220
Leistung max
300W
Reverse-Recovery-Time-trr
-
Strom-Kollektor-Ic-Max
80A
Spannungs-Kollektor-Emitter-Breakdown-Max
650V
IGBT-Typ
-
Strom-Kollektor-gepulster-Icm
120A
Vce-on-Max-Vge-Ic
2.4V @ 15V, 40A
Schaltenergie
1.27mJ (on), 460μJ (off)
Gate-Gebühr
63nC
Td-ein-aus-25°C
41ns/130ns
Testbedingung
400V, 40A, 7.5 Ohm, 15V
Tags
AOTS, AOT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ha & Omega Semiconductor SCT
650V, 40A Alpha IGBT (TM), TO220-3, RoHS
***i-Key
IGBT 650V 40A TO220
***ical
Trans IGBT Chip N-CH 650V 60A 260000mW 3-Pin(3+Tab) TO-220 Tube
***icroelectronics
Trench gate field-stop IGBT, H series 600 V, 30 A high speed
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***ical
Trans IGBT Chip N-CH 600V 80A 62500mW 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ark
IGBT, SINGLE, 600V, 80A, TO-220AB; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:283W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
***ical
Trans IGBT Chip N-CH 650V 30A 31000mW 3-Pin(3+Tab) TO-220FP Tube
***icroelectronics
Trench gate field-stop IGBT M series, 650 V 15 A low loss
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***ical
Trans IGBT Chip N-CH 650V 10.8A 31200mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
IKA08N65H5 Series 650 V 10.8 A Through Hole DuoPack IGBT - TO-220-3
***ineon SCT
650 V, 8 A IGBT with anti-parallel diode in TO-220 package, PG-TO220-3, RoHS
***nell
IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 31.2W; Collector Emitter Voltage V(br)ceo: 650V; Transistor ; Available until stocks are exhausted
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***ical
Trans IGBT Chip N-CH 650V 10.8A 3-Pin(3+Tab) TO-220FP Tube
***ark
Igbt Single Transistor, 8 A, 1.6 V, 31.2 W, 650 V, To-220, 3 Rohs Compliant: Yes
***ineon SCT
High Speed 650 V, 8 A hard-switching TRENCHSTOP™ IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS
***nell
IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 31.2W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins; O
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***ical
Trans IGBT Chip N-CH 650V 30000mW 3-Pin(3+Tab) TO-220F Rail
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Using innovative field stop IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for IPL (Intense Pulsed Light).
Teil # Mfg. Beschreibung Aktie Preis
AOTS40B65H1
DISTI # 785-1774-ND		Alpha & Omega SemiconductorIGBT 650V 40A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		532In Stock
  • 5000:$1.0850
  • 3000:$1.0986
  • 1000:$1.1799
  • 500:$1.4241
  • 250:$1.6275
  • 100:$1.8309
  • 25:$2.0344
  • 10:$2.2790
  • 1:$2.5200
Bild Teil # Beschreibung
AOTS40B65H1

Mfr.#: AOTS40B65H1

OMO.#: OMO-AOTS40B65H1-ALPHA-AND-OMEGA-SEMICONDUCTOR

 IGBT 650V 40A TO220
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von AOTS40B65H1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,63 $
1,63 $
10
1,55 $
15,46 $
100
1,46 $
146,48 $
500
1,38 $
691,70 $
1000
1,30 $
1 302,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
More Newest Products
Top