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SIHB12N50C-E3

SIHB12N50C-E3
Mfr. #:
SIHB12N50C-E3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET N-Channel 500V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHB12N50C-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB12N50C-E3 DatasheetSIHB12N50C-E3 Datasheet (P4-P6)SIHB12N50C-E3 Datasheet (P7-P9)SIHB12N50C-E3 Datasheet (P10)
ECAD Model:
Mehr Informationen:
SIHB12N50C-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
560 V
Id - Kontinuierlicher Drainstrom:
12 A
Rds On - Drain-Source-Widerstand:
555 mOhms
Vgs th - Gate-Source-Schwellenspannung:
5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
32 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
208 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Schüttgut
Marke:
Vishay / Siliconix
Abfallzeit:
6 ns
Produktart:
MOSFET
Anstiegszeit:
35 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
23 ns
Typische Einschaltverzögerungszeit:
18 ns
Gewichtseinheit:
0.050717 oz
Tags
SIHB12N5, SIHB12N, SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIHB12N50C-E3 N-channel MOSFET Transistor; 12 A; 500 V; 3-Pin D2PAK
***et
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK
*** Europe
N-CH SINGLE 500V TO263
SiHx12N50C-E3 500V N-Channel Power MOSFETs
Vishay Siliconix SiHx12N50C-E3 500V, 12A N-Channel Power MOSFETs with ultra-low 0.555-Ω maximum on-resistance at a 10V gate drive and an improved gate charge of 48nC. The low on-resistance of the Vishay Siliconix SiHP12N50C-E3 (TO-220 package), SiHF12N50C-E3 (TO-220 FULLPAK), and SiHB12N50C-E3 (D²PAK) translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, pulse width modulation (PWM) half bridges, and LLC topologies in a wide range of applications, including notebook computer AC adapters, PCs, LCD TVs, and open-frame power supplies. SiHx12N50C-E3 500V Power MOSFETs feature a gate charge of 48nC. Gate charge times on-resistance is a low 26.54Ω-nC. These Vishay Siliconix Power MOSFETs are produced using Vishay Planar Cell technology, which has been tailored to minimize on-state resistance and withstand high energy pulses in the avalanche and commutation mode. The SiHP12N50C-E3, SiHG12N50C-E3, and SiHB12N50C-E3 offer improved switching speed and conduction losses compared to previous-generation MOSFETs.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SIHB12N50C-E3
DISTI # SIHB12N50C-E3-ND		Vishay SiliconixMOSFET N-CH 500V 12A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$2.9106
SIHB12N50C-E3
DISTI # SIHB12N50C-E3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: SIHB12N50C-E3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$2.6900
  • 2000:$2.5900
  • 4000:$2.4900
  • 6000:$2.3900
  • 10000:$2.3900
SIHB12N50C-E3
DISTI # 70616559		Vishay SiliconixSIHB12N50C-E3 N-channel MOSFET Transistor,12 A,500 V,3-Pin D2PAK
RoHS: Compliant		0
  • 100:$3.2400
  • 250:$2.7400
  • 500:$2.5400
  • 1000:$2.3700
SIHB12N50C-E3
DISTI # 781-SIHB12N50C-E3		Vishay IntertechnologiesMOSFET N-Channel 500V
RoHS: Compliant		1000
  • 1:$5.3000
  • 10:$4.3900
  • 100:$3.6100
  • 250:$3.5000
  • 500:$3.1400
  • 1000:$2.6500
  • 2000:$2.5200
SIHB12N50C-E3Vishay IntertechnologiesMOSFET N-Channel 500V
RoHS: Compliant		Americas -
    Bild Teil # Beschreibung
    SIHB12N50E-GE3

    Mfr.#: SIHB12N50E-GE3

    OMO.#: OMO-SIHB12N50E-GE3

    		 MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
    SIHB12N60E-GE3

    Mfr.#: SIHB12N60E-GE3

    OMO.#: OMO-SIHB12N60E-GE3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB12N65E-GE3

    Mfr.#: SIHB12N65E-GE3

    OMO.#: OMO-SIHB12N65E-GE3-VISHAY

    		 IGBT Transistors MOSFET 650V 392mOhm@10V 12A N-Ch E-SRS
    SIHB12N50C-E3

    Mfr.#: SIHB12N50C-E3

    OMO.#: OMO-SIHB12N50C-E3-VISHAY

    		 IGBT Transistors MOSFET N-Channel 500V
    SIHB12N50E-GE3

    Mfr.#: SIHB12N50E-GE3

    OMO.#: OMO-SIHB12N50E-GE3-VISHAY

    		 IGBT Transistors MOSFET N-Channel 500V
    SIHB12N50C

    Mfr.#: SIHB12N50C

    OMO.#: OMO-SIHB12N50C-1190

    		 Neu und Original
    SIHB12N60E

    Mfr.#: SIHB12N60E

    OMO.#: OMO-SIHB12N60E-1190

    		 Neu und Original
    SIHB12N60EGE3

    Mfr.#: SIHB12N60EGE3

    OMO.#: OMO-SIHB12N60EGE3-1190

    		 Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    SIHB120N60E-GE3

    Mfr.#: SIHB120N60E-GE3

    OMO.#: OMO-SIHB120N60E-GE3-VISHAY

    		 MOSFET N-CHAN 650V D2PAK (TO-263
    SIHB12N60ET1-GE3

    Mfr.#: SIHB12N60ET1-GE3

    OMO.#: OMO-SIHB12N60ET1-GE3-VISHAY

    		 MOSFET N-CH 600V 12A TO263
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3000
    Menge eingeben:
    Der aktuelle Preis von SIHB12N50C-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1000
    2,64 $
    2 640,00 $
    2000
    2,51 $
    5 020,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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