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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FQB20N06TM DISTI # FQB20N06TM-ND | ON Semiconductor | MOSFET N-CH 60V 20A D2PAK Min Qty: 800 Container: Tape & Reel (TR) | Limited Supply - Call | |
| FQB20N06TM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 20A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 1550 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: FQB22P10TM-F085 OMO.#: OMO-FQB22P10TM-F085 |
MOSFET P-Chan, -100V, -22A 0.125HM@VGS=-10V |
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Mfr.#: FQB22910 OMO.#: OMO-FQB22910-1190 |
Neu und Original |
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Mfr.#: FQB2532 OMO.#: OMO-FQB2532-1190 |
Neu und Original |
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Mfr.#: FQB25N33TM-F085 |
MOSFET N-CH 330V 25A D2PAK |
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Mfr.#: FQB27N25TM OMO.#: OMO-FQB27N25TM-1190 |
Power Field-Effect Transistor, 25.5A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: FQB2N50TM-NL OMO.#: OMO-FQB2N50TM-NL-1190 |
Neu und Original |
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Mfr.#: FQB2N60TM-NL OMO.#: OMO-FQB2N60TM-NL-1190 |
Neu und Original |
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Mfr.#: FQB2N90TM |
MOSFET N-CH 900V 2.2A D2PAK |
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Mfr.#: FQB2NA90 OMO.#: OMO-FQB2NA90-1190 |
Neu und Original |
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Mfr.#: FQB25N33TM_F085 OMO.#: OMO-FQB25N33TM-F085-126 |
IGBT Transistors MOSFET 330V NCH MOSFET |