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A2I20H080GNR1

A2I20H080GNR1
Mfr. #:
A2I20H080GNR1
Hersteller:
NXP Semiconductors
Beschreibung:
RF Amplifier AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS 1800-2200 MHz, 12.5 W AVG, 28 V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
A2I20H080GNR1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
A2I20H080GNR1 Mehr Informationen A2I20H080GNR1 Product Details
Produkteigenschaft
Attributwert
Hersteller
NXP / Freescale
Produktkategorie
HF-Verstärker
Tags
A2I20H08, A2I20H, A2I20, A2I2, A2I
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
Amplifier,1800 to 2200 MHz, 70 W, Typ Gain in dB is 28.2 @ 1840 MHz, 30 V, LDMOS, SOT1722
***escale Semiconductor
AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS 1800-2200 MHz, 12.5 W AVG., 28 V
***hardson RFPD
RF & MW POWER AMPLIFIER
***et
Wideband IC LDMOS 1800-2200MHz 13.5W 30V Airfast
***i-Key
AIRFAST RF LDMOS WIDEBAND INTEGR
NXP RF-IF Solutions
NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More
Teil # Mfg. Beschreibung Aktie Preis
A2I20H080GNR1
DISTI # A2I20H080GNR1-ND		NXP SemiconductorsAIRFAST RF LDMOS WIDEBAND INTEGR
RoHS: Not compliant
Min Qty: 500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 500:$43.4128
A2I20H080GNR1
DISTI # A2I20H080GNR1		NXP SemiconductorsWideband IC LDMOS 1800-2200MHz 13.5W 30V Airfast - Tape and Reel (Alt: A2I20H080GNR1)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 500:$43.1900
  • 1000:$41.4900
  • 2000:$39.8900
  • 3000:$38.3900
  • 5000:$37.6900
A2I20H080GNR1
DISTI # 841-A2I20H080GNR1		NXP SemiconductorsRF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 1800-2200 MHz, 12.5 W Avg., 30 V
RoHS: Compliant		0
  • 500:$43.4200
A2I20H080GNR1
DISTI # A2I20H080GNR1		NXP SemiconductorsRF & MW POWER AMPLIFIER
RoHS: Compliant		490
  • 1:$66.3000
  • 10:$59.9200
  • 25:$56.6500
Bild Teil # Beschreibung
A2I20H060NR1

Mfr.#: A2I20H060NR1

OMO.#: OMO-A2I20H060NR1

 RF Amplifier A2I20H060N/FM15F///REEL 13 Q2 DP
A2I20H080NR1

Mfr.#: A2I20H080NR1

OMO.#: OMO-A2I20H080NR1

 RF Amplifier A2I20H080N/FM15F///REEL 13 Q2 DP
A2I20H080GNR1

Mfr.#: A2I20H080GNR1

OMO.#: OMO-A2I20H080GNR1

 RF Amplifier A2I20H080GN/FM15F///REEL 13 Q2 DP
A2I20H060GNR1

Mfr.#: A2I20H060GNR1

OMO.#: OMO-A2I20H060GNR1

 RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 1805-2170 MHz, 12 W Avg., 28 V
A2I20H060GNR1

Mfr.#: A2I20H060GNR1

OMO.#: OMO-A2I20H060GNR1-NXP-SEMICONDUCTORS

 RF Amplifier AIRFAST RF POWER LDMOS TRANSISTORS 1805-2170 MHz, 12 W AVG, 28 V
A2I20H060NR1

Mfr.#: A2I20H060NR1

OMO.#: OMO-A2I20H060NR1-NXP-SEMICONDUCTORS

 RF Amplifier AIRFAST RF POWER LDMOS TRANSISTORS 1805-2170 MHz, 12 W AVG, 28 V
A2I20H080GNR1

Mfr.#: A2I20H080GNR1

OMO.#: OMO-A2I20H080GNR1-NXP-SEMICONDUCTORS

 RF Amplifier AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS 1800-2200 MHz, 12.5 W AVG, 28 V
A2I20H060N:

Mfr.#: A2I20H060N:

OMO.#: OMO-A2I20H060N--1190

 Neu und Original
A2I20H080N

Mfr.#: A2I20H080N

OMO.#: OMO-A2I20H080N-1190

 Neu und Original
A2I20H080NQQ1633J

Mfr.#: A2I20H080NQQ1633J

OMO.#: OMO-A2I20H080NQQ1633J-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von A2I20H080GNR1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
56,54 $
56,54 $
10
53,71 $
537,08 $
100
50,88 $
5 088,15 $
500
48,05 $
24 027,40 $
1000
45,23 $
45 228,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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