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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RFD16N03L DISTI # 512-RFD16N03L | ON Semiconductor | MOSFET TO-251 RoHS: Not compliant | 0 | |
| RFD16N03LSM | Harris Semiconductor | Power Field-Effect Transistor, 16A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 2057 |
|
| RFD16N03LSM9A | Harris Semiconductor | Power Field-Effect Transistor, 16A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 1540 |
|
| RFD16N03LSM | Harris Semiconductor | 50 |
| |
| RFD16N03LSM9A | HARTING Technology Group | 763 | ||
| RFD16N03LSM | Intersil Corporation | 16 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 992 |
|
| RFD16N03LSM | Motorola Semiconductor Products | 16 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 7 |
|
| RFD16N03LSM | Harris Semiconductor | 16 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 40 |
|
| RFD16N03 | HARTING Technology Group | Power Field-Effect Transistor, 16A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Not Compliant | 1405 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: RFD14N05L OMO.#: OMO-RFD14N05L |
MOSFET TO-251AA N-Ch Power |
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Mfr.#: RFD14N05LSM OMO.#: OMO-RFD14N05LSM |
MOSFET TO-252AA N-Ch Power |
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Mfr.#: RFD11N06RLESM OMO.#: OMO-RFD11N06RLESM-1190 |
Neu und Original |
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Mfr.#: RFD14N05SM9 OMO.#: OMO-RFD14N05SM9-1190 |
Neu und Original |
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Mfr.#: RFD14N05SM96156 OMO.#: OMO-RFD14N05SM96156-1190 |
Neu und Original |
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Mfr.#: RFD14N05SM9A-NL OMO.#: OMO-RFD14N05SM9A-NL-1190 |
Neu und Original |
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Mfr.#: RFD14P05 OMO.#: OMO-RFD14P05-1190 |
Neu und Original |
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Mfr.#: RFD16N05+ OMO.#: OMO-RFD16N05--1190 |
MOSFET N-CH 50V 16A I-PAK |
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Mfr.#: RFD16N05LSM6A OMO.#: OMO-RFD16N05LSM6A-1190 |
Neu und Original |
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Mfr.#: RFD16N06LE OMO.#: OMO-RFD16N06LE-1190 |
Neu und Original |