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SISH112DN-T1-GE3

SISH112DN-T1-GE3
Mfr. #:
SISH112DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 12V Vgs PowerPAK 1212-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SISH112DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SISH112DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-1212-8SH
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
17.8 A
Rds On - Drain-Source-Widerstand:
7.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
600 mV
Vgs - Gate-Source-Spannung:
12 V
Qg - Gate-Ladung:
27 nC
Minimale Betriebstemperatur:
- 50 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
3.8 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Serie:
SIS
Transistortyp:
1 N-Channel TrenchFET Power MOSFET
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
97 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
65 ns
Typische Einschaltverzögerungszeit:
10 ns
Tags
SISH11, SISH1, SISH, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SISH112DN-T1-GE3
DISTI # V99:2348_22712067		Vishay IntertechnologiesN-Channel 30 V (D-S) Fast Switching MOSFET PowerPAK 1212-8SH 300M , 7.5 m @ 10V m @ 7.5V 8.2 m @ 4.56000
  • 3000:$0.5823
  • 1000:$0.6228
  • 500:$0.7961
  • 100:$0.9453
  • 10:$1.2084
  • 1:$1.6317
SISH112DN-T1-GE3
DISTI # SISH112DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V PPAK 1212-8SH
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6050In Stock
  • 1000:$0.6976
  • 500:$0.8836
  • 100:$1.0696
  • 10:$1.3720
  • 1:$1.5300
SISH112DN-T1-GE3
DISTI # SISH112DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V PPAK 1212-8SH
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6050In Stock
  • 1000:$0.6976
  • 500:$0.8836
  • 100:$1.0696
  • 10:$1.3720
  • 1:$1.5300
SISH112DN-T1-GE3
DISTI # SISH112DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 1212-8 PPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 15000:$0.5779
  • 6000:$0.6005
  • 3000:$0.6321
SISH112DN-T1-GE3
DISTI # 31579471		Vishay IntertechnologiesN-Channel 30 V (D-S) Fast Switching MOSFET PowerPAK 1212-8SH 300M , 7.5 m @ 10V m @ 7.5V 8.2 m @ 4.56000
  • 3000:$0.5823
  • 1000:$0.6228
  • 500:$0.7961
  • 100:$0.9453
  • 11:$1.2084
SISH112DN-T1-GE3
DISTI # SISH112DN-T1-GE3		Vishay IntertechnologiesN-CH 30-V (D-S) FAST SWITCHING MOSFE - Tape and Reel (Alt: SISH112DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.5509
  • 30000:$0.5659
  • 18000:$0.5819
  • 12000:$0.6069
  • 6000:$0.6249
SISH112DN-T1-GE3
DISTI # 81AC3493		Vishay IntertechnologiesN-CH 30-V (D-S) FAST SWITCHING MOSFE0
  • 10000:$0.5470
  • 6000:$0.5590
  • 4000:$0.5810
  • 2000:$0.6450
  • 1000:$0.7100
  • 1:$0.7400
SISH112DN-T1-GE3
DISTI # 99AC9582		Vishay IntertechnologiesMOSFET, N-CH, 30V, 11.3A, 150DEG C, 1.5W,Transistor Polarity:N Channel,Continuous Drain Current Id:11.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,PowerRoHS Compliant: Yes50
  • 500:$0.8260
  • 250:$0.8930
  • 100:$0.9610
  • 50:$1.0500
  • 25:$1.1500
  • 10:$1.2400
  • 1:$1.5200
SISH112DN-T1-GE3
DISTI # 78-SISH112DN-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 12V Vgs PowerPAK 1212-8
RoHS: Compliant		5944
  • 1:$1.5000
  • 10:$1.2300
  • 100:$0.9500
  • 500:$0.8170
  • 1000:$0.6440
  • 3000:$0.6010
  • 6000:$0.5710
  • 9000:$0.5500
SISH112DN-T1-GE3
DISTI # 3019128		Vishay IntertechnologiesMOSFET, N-CH, 30V, 11.3A, 150DEG C, 1.5W
RoHS: Compliant		50
  • 5000:$0.9140
  • 1000:$0.9200
  • 500:$1.1400
  • 250:$1.2500
  • 100:$1.3600
  • 25:$1.7400
  • 5:$1.9100
SISH112DN-T1-GE3
DISTI # 3019128		Vishay IntertechnologiesMOSFET, N-CH, 30V, 11.3A, 150DEG C, 1.5W50
  • 500:£0.5930
  • 250:£0.6420
  • 100:£0.6900
  • 10:£0.9380
  • 1:£1.2400
Bild Teil # Beschreibung
NJW3281G

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FDMC6675BZ

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SP-3541

Mfr.#: SP-3541

OMO.#: OMO-SP-3541

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JMK107BC6226MA-T

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 Multilayer Ceramic Capacitors MLCC - SMD/SMT 22uF 6.3V X6S 20% 0603 Gen Purp
RC0402FR-07100KL

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OMO.#: OMO-RC0402FR-07100KL

 Thick Film Resistors - SMD 100K OHM 1%
L135-G525003500000

Mfr.#: L135-G525003500000

OMO.#: OMO-L135-G525003500000

 High Power LEDs - Single Color Green 520nm-540nm
L135-G525003500000

Mfr.#: L135-G525003500000

OMO.#: OMO-L135-G525003500000-LUMILEDS

 3535L GREEN
EMK316BB7226ML-T

Mfr.#: EMK316BB7226ML-T

OMO.#: OMO-EMK316BB7226ML-T-TAIYO-YUDEN

 CAP CER 22UF 16V X7R 1206
FDMC6675BZ

Mfr.#: FDMC6675BZ

OMO.#: OMO-FDMC6675BZ-ON-SEMICONDUCTOR

 MOSFET P-CH 30V 9.5A POWER33
NJW3281G

Mfr.#: NJW3281G

OMO.#: OMO-NJW3281G-ON-SEMICONDUCTOR

 Bipolar Transistors - BJT 200 W BETA AUDIO
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von SISH112DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,50 $
1,50 $
10
1,23 $
12,30 $
100
0,95 $
95,00 $
500
0,82 $
408,50 $
1000
0,64 $
644,00 $
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