IPB80N03S4L-02

Mfr. #:: IPB80N03S4L-02
Hersteller:: Infineon Technologies
Beschreibung:: Darlington Transistors MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPB80N03S4L-02 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: IPB80N03S4L-02 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller: INFINEON

Produktkategorie: FETs - Einzeln

Serie: OptiMOS-T2

Verpackung: Spule

Teil-Aliasnamen: IPB80N03S4L02ATMA1 IPB80N03S4L02XT SP000273282

Gewichtseinheit: 0.139332 oz

Montageart: SMD/SMT

Handelsname: OptiMOS

Paket-Koffer: TO-252-3

Technologie: Si

Anzahl der Kanäle: 1 Channel

Aufbau: Single

Transistor-Typ: 1 N-Channel

Pd-Verlustleistung: 136 W

Maximale-Betriebstemperatur: + 175 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 13 ns

Anstiegszeit: 9 ns

Vgs-Gate-Source-Spannung: 16 V

ID-Dauer-Drain-Strom: 80 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Rds-On-Drain-Source-Widerstand: 2.4 mOhms

Transistor-Polarität: N-Kanal

Typische-Ausschaltverzögerungszeit: 62 ns

Typische-Einschaltverzögerungszeit: 14 ns

Kanal-Modus: Erweiterung

Tags: IPB80N03S4L-0, IPB80N03S, IPB80N03, IPB80N0, IPB80N, IPB8, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB80N03S4L-02 Mehr Informationen

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

20V to 40V N-Channel Automotive MOSFETs: Infineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8), TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPB80N03S4L02ATMA1 DISTI # IPB80N03S4L02ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 80A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$0.8879
IPB80N03S4L02ATMA1 DISTI # IPB80N03S4L02ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB80N03S4L02ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$0.8019 2000:$0.7729 4000:$0.7449 6000:$0.7199 10000:$0.7069
IPB80N03S4L02ATMA1 DISTI # SP000273282	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 (Alt: SP000273282) RoHS: Compliant Min Qty: 1000	Europe - 0	1000:€1.1889 2000:€0.9269 4000:€0.8289 6000:€0.7539 10000:€0.7069
IPB80N03S4L02ATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 80A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	16735	1000:$0.5500 500:$0.5800 100:$0.6100 25:$0.6300 1:$0.6800
IPB80N03S4L-02 DISTI # 726-IPB80N03S4L-02	Infineon Technologies AG	MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2 RoHS: Compliant	1105	1:$1.5100 10:$1.2800 100:$1.0300 500:$0.8940 1000:$0.7410
IPB80N03S4L02ATMA1 DISTI # 8268954P	Infineon Technologies AG	MOSFET N-CH 80A 30V OPTIMOS-T2 TO263, RL	1175	125:£0.7720 500:£0.6700 1250:£0.6370

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IPB80N06S405ATMA2 OMO.#: OMO-IPB80N06S405ATMA2	MOSFET N-Ch 60V 80A D2PAK-2
	Mfr.#: IPB80N08S207ATMA1 OMO.#: OMO-IPB80N08S207ATMA1	MOSFET N-CHANNEL_75/80V
	Mfr.#: IPB80N04S404ATMA1 OMO.#: OMO-IPB80N04S404ATMA1	MOSFET N-CHANNEL_30/40V
	Mfr.#: IPB80N04S403ATMA1 OMO.#: OMO-IPB80N04S403ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 40V 80A TO263-3-2
	Mfr.#: IPB80N08S207ATMA1 OMO.#: OMO-IPB80N08S207ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 75V 80A TO263-3
	Mfr.#: IPB80N04S2H4ATMA2 OMO.#: OMO-IPB80N04S2H4ATMA2-INFINEON-TECHNOLOGIES	MOSFET N-CHANNEL_30/40V
	Mfr.#: IPB80N06S2-09(2N0609) OMO.#: OMO-IPB80N06S2-09-2N0609--1190	Neu und Original
	Mfr.#: IPB80N06S4L05ATMA1 OMO.#: OMO-IPB80N06S4L05ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 80A TO263-3
	Mfr.#: IPB80N08S2L OMO.#: OMO-IPB80N08S2L-1190	Neu und Original
	Mfr.#: IPB80N06S2-05 OMO.#: OMO-IPB80N06S2-05-317	RF Bipolar Transistors MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3000
Menge eingeben:

Der aktuelle Preis von IPB80N03S4L-02 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,11 $~~; ~~1,11 $~~

10: ~~1,06 $~~; ~~10,56 $~~

100: ~~1,00 $~~; ~~100,04 $~~

500: ~~0,94 $~~; ~~472,40 $~~

1000: ~~0,89 $~~; ~~889,20 $~~

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IPB80N03S4L-02

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes