STGW40NC60KD

Mfr. #:: STGW40NC60KD
Hersteller:: STMicroelectronics
Beschreibung:: IGBT Transistors 40A - 600V Short circuit rugged IGBT
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: STGW40NC60KD Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: STGW40NC60KD Mehr Informationen STGW40NC60KD Product Details

Produkteigenschaft
Attributwert

Hersteller:: STMicroelectronics

Produktkategorie:: IGBT-Transistoren

RoHS:: Y

Technologie:: Si

Paket / Koffer:: TO-247-3

Montageart:: Durchgangsloch

Aufbau:: Single

Kollektor- Emitterspannung VCEO Max:: 600 V

Maximale Gate-Emitter-Spannung:: 20 V

Pd - Verlustleistung:: 250 W

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Serie:: STGW40NC60KD

Verpackung:: Rohr

Kontinuierlicher Kollektorstrom Ic Max:: 70 A

Höhe:: 20.15 mm

Länge:: 15.75 mm

Breite:: 5.15 mm

Marke:: STMicroelectronics

Produktart:: IGBT-Transistoren

Werkspackungsmenge:: 600

Unterkategorie:: IGBTs

Gewichtseinheit:: 1.340411 oz

Tags: STGW40NC, STGW40N, STGW40, STGW4, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGW40NC60KD Beschreibung

***ical: Trans IGBT Chip N-CH 600V 70A 250000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: STGW Series Trade Switching Low On State Through hole IGBT - TO-247-3

***icroelectronics: 40 A - 600 V - short circuit rugged IGBT

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247

***et: STMICROELECTRONICS STGW40NC60KD IGBTS

***ure Electronics: Very Fast 600 V 80 A 250 W Flange Mount PowerMESH IGBT - TO-247LL

***ical: Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-247 Tube

***el Electronic: PMIC Solutions Power Management IC, i.MX6, no-prog ,4/6 buck, 6 LDO, 1 boost, QFN 56, Reel

***icroelectronics: 40 A, 600 V, very fast IGBT with Ultrafast diode

***nell: IGBT, N 600V 40A TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O

***p One Stop: Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***(Formerly Allied Electronics): IRG4PC50FPBF, IGBT Transistor, 70 A 600V, 3-Pin TO-247AC

***ure Electronics: IRG4PC50 Series 600 V 39 A N-Channel Fast Speed IGBT - TO-247AC

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.6 V Current release time: 230 ns Power dissipation: 200 W

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:70A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes

***ment14 APAC: IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:70A; Current Temperature:25°C; Fall Time Max:130ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:280A; Rise Time:25ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***p One Stop Global: Trans IGBT Chip N-CH 600V 60A 308000mW 3-Pin(3+Tab) TO-247AC Tube

***ure Electronics: IRGP35B60PDPBF Series 600 V 34 A N-Channel UltraFast IGBT - TO-247AC

***ineon SCT: 600V Warp2 150kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.85 V Current release time: 8 ns Power dissipation: 308 W

***ment14 APAC: IGBT, 600V, 40A, TO-247AC; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:2.15V; Power Dissipation Pd:308W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Package / Case:TO-247AC; Power Dissipation Max:308W; Power Dissipation Pd:308W; Power Dissipation Pd:308W; Pulsed Current Icm:120A; Rise Time:6ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***p One Stop Global: Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***ure Electronics: IRG4PC50SPBF Series 600 V 41 A N-Channel Standard Speed IGBT - TO-247AC

***ineon SCT: 600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package, TO247-3, RoHS

***el Electronic: In a Tube of 25, Infineon IRG4PC50SPBF IGBT, 70 A 600 V, 3-Pin TO-247AC

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.36 V Current release time: 620 ns Power dissipation: 200 W

***nell: IGBT, 600V, 70A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current Ic Continuous a Max:70A; Voltage, Vce Sat Max:1.36V; Power Dissipation:200W; Case Style:TO-247AC; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:140A; No. of Pins:3; Power, Pd:200W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:600ns; Time, Rise:30ns; Transistors, No. of:1

***icroelectronics: Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

***ical: Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, 600V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 600V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 1.55V; Transistor Case Style: TO-247; No. of Pins

***ical: Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube

***icroelectronics: New short circuit rugged "K" series

***r Electronics: Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247

***(Formerly Allied Electronics): IGBT N-Channel 30A 600V TO-247

***ark: Igbt, Single, 600V, 60A, To-247-3; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):2.1V; Power Dissipation Pd:200W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***DA Technology Co., Ltd.: Product Description Demo for Development.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
STGW40NC60KD DISTI # V79:2366_17781904	STMicroelectronics	Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	200	5000:$2.0410 2500:$2.1000 1000:$2.1740 500:$2.5990 250:$2.8600 100:$3.0440 10:$3.5430 1:$4.6144
STGW40NC60KD DISTI # V36:1790_06560768	STMicroelectronics	Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0
STGW40NC60KD DISTI # 497-8441-5-ND	STMicroelectronics	IGBT 600V 70A 250W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	1226In Stock	2520:$2.2344 510:$2.7818 120:$3.2678 30:$3.7707 10:$3.9880 1:$4.4400
STGW40NC60KD DISTI # 26113382	STMicroelectronics	Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	200	5000:$2.0410 2500:$2.1000 1000:$2.1740 500:$2.5990 250:$2.8600 100:$3.0440 10:$3.5430 4:$4.1950
STGW40NC60KD DISTI # STGW40NC60KD	STMicroelectronics	Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube (Alt: STGW40NC60KD) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€1.7900 100:€1.9900 500:€1.9900 50:€2.0900 25:€2.1900 10:€2.2900 1:€2.4900
STGW40NC60KD DISTI # STGW40NC60KD	STMicroelectronics	Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STGW40NC60KD) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	3600:$1.9900 6000:$1.9900 2400:$2.0900 1200:$2.1900 600:$2.2900
STGW40NC60KD DISTI # 09R5998	STMicroelectronics	PTD HIGH VOLTAGE	0	500:$2.0800 250:$2.1400 100:$2.5600 50:$2.9600 25:$3.1500 10:$3.6000 1:$4.1500
STGW40NC60KD DISTI # 511-STGW40NC60KD	STMicroelectronics	IGBT Transistors 40A - 600V Short circuit rugged IGBT RoHS: Compliant	226	1:$4.2300 10:$3.6000 100:$3.1200 250:$2.9600 500:$2.6500 1000:$2.2400 2500:$2.1300
STGW40NC60KD	STMicroelectronics		300
STGW40NC60KD	STMicroelectronics	Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247 RoHS: Compliant	Europe - 285

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Verfügbarkeit

Aktie:: 826
Auf Bestellung:: 2809
Menge eingeben:

Der aktuelle Preis von STGW40NC60KD dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~4,23 $~~; ~~4,23 $~~

10: ~~3,60 $~~; ~~36,00 $~~

100: ~~3,12 $~~; ~~312,00 $~~

250: ~~2,96 $~~; ~~740,00 $~~

500: ~~2,65 $~~; ~~1 325,00 $~~

1000: ~~2,24 $~~; ~~2 240,00 $~~

2500: ~~2,13 $~~; ~~5 325,00 $~~

5000: ~~2,05 $~~; ~~10 250,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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STGW40NC60KD

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes