IPB034N06L3 G

IPB034N06L3 G
Mfr. #:
IPB034N06L3 G
Hersteller:
Infineon Technologies
Beschreibung:
Darlington Transistors MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB034N06L3 G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB034N06L3 G Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
OptiMOS 3
Verpackung
Spule
Teil-Aliasnamen
IPB034N06L3GATMA1 IPB034N06L3GXT SP000398062
Gewichtseinheit
0.068654 oz
Montageart
SMD/SMT
Handelsname
OptiMOS
Paket-Koffer
TO-263-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
167 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
13 ns
Anstiegszeit
78 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
90 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Rds-On-Drain-Source-Widerstand
3.4 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
64 ns
Typische-Einschaltverzögerungszeit
25 ns
Kanal-Modus
Erweiterung
Tags
IPB034N06L3G, IPB034N06L, IPB034N06, IPB034, IPB03, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IPB034N06L3GATMA1
DISTI # IPB034N06L3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 90A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 1000:$0.8174
IPB034N06L3GATMA1
DISTI # IPB034N06L3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 60V 90A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 500:$1.0162
  • 100:$1.3065
  • 10:$1.6260
  • 1:$1.8000
IPB034N06L3GATMA1
DISTI # IPB034N06L3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 60V 90A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 500:$1.0162
  • 100:$1.3065
  • 10:$1.6260
  • 1:$1.8000
IPB034N06L3 G
DISTI # SP000398062
Infineon Technologies AGTrans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R (Alt: SP000398062)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€1.0129
  • 2000:€0.8499
  • 4000:€0.7099
  • 6000:€0.6179
  • 10000:€0.5789
IPB034N06L3GXT
DISTI # IPB034N06L3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB034N06L3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$0.5899
  • 2000:$0.5689
  • 4000:$0.5479
  • 6000:$0.5299
  • 10000:$0.5199
IPB034N06L3GATMA1
DISTI # SP000398062
Infineon Technologies AGTrans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R (Alt: SP000398062)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€0.8499
  • 2000:€0.6949
  • 4000:€0.6369
  • 6000:€0.5879
  • 10000:€0.5459
IPB034N06L3GATMA1
DISTI # 50Y2003
Infineon Technologies AGMOSFET, N-CH, 60V, 90A, 175DEG C, 167W,Transistor Polarity:N Channel,Continuous Drain Current Id:90A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes0
  • 1:$1.5100
  • 10:$1.2900
  • 25:$1.2000
  • 50:$1.1200
  • 100:$1.0300
  • 250:$0.9640
  • 500:$0.8970
IPB034N06L3 G
DISTI # 726-IPB034N06L3G
Infineon Technologies AGMOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
RoHS: Compliant
13
  • 1:$1.5100
  • 10:$1.2900
  • 100:$1.0300
  • 500:$0.8970
  • 1000:$0.7440
IPB034N06L3GATMA1
DISTI # 726-IPB034N06L3GATMA
Infineon Technologies AGMOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
RoHS: Compliant
60
  • 1:$1.5100
  • 10:$1.2900
  • 100:$1.0300
  • 500:$0.8970
  • 1000:$0.7440
IPB034N06L3GInfineon Technologies AGINSTOCK770
    IPB034N06L3GInfineon Technologies AG60V,3.4m,90A,N-Channel Power MOSFET500
    • 1:$1.1900
    • 100:$0.9900
    • 500:$0.8700
    • 1000:$0.8500
    IPB034N06L3GATMA1
    DISTI # 2480798
    Infineon Technologies AGMOSFET, N-CH, 60V, 90A, TO-263-3
    RoHS: Compliant
    6
    • 1:$2.4000
    • 10:$2.0400
    • 100:$1.6300
    • 500:$1.4200
    • 1000:$1.1800
    IPB034N06L3GATMA1
    DISTI # 2480798RL
    Infineon Technologies AGMOSFET, N-CH, 60V, 90A, TO-263-3
    RoHS: Compliant
    0
    • 1:$2.4000
    • 10:$2.0400
    • 100:$1.6300
    • 500:$1.4200
    • 1000:$1.1800
    IPB034N06L3GATMA1
    DISTI # 2480798
    Infineon Technologies AGMOSFET, N-CH, 60V, 90A, TO-263-3
    RoHS: Compliant
    11
    • 5:£1.0400
    • 25:£0.9210
    • 100:£0.7880
    • 250:£0.7550
    • 500:£0.6850
    Bild Teil # Beschreibung
    IPB034N03L G

    Mfr.#: IPB034N03L G

    OMO.#: OMO-IPB034N03L-G

    MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS 3
    IPB034N06L3 G

    Mfr.#: IPB034N06L3 G

    OMO.#: OMO-IPB034N06L3-G

    MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
    IPB034N06L3GXT

    Mfr.#: IPB034N06L3GXT

    OMO.#: OMO-IPB034N06L3GXT-1190

    Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB034N06L3GATMA1)
    IPB034N03LGXT

    Mfr.#: IPB034N03LGXT

    OMO.#: OMO-IPB034N03LGXT-1190

    Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB034N03LGATMA1)
    IPB034N03L

    Mfr.#: IPB034N03L

    OMO.#: OMO-IPB034N03L-1190

    Neu und Original
    IPB034N06L3

    Mfr.#: IPB034N06L3

    OMO.#: OMO-IPB034N06L3-1190

    Neu und Original
    IPB034N06L3G

    Mfr.#: IPB034N06L3G

    OMO.#: OMO-IPB034N06L3G-1190

    60V,3.4m��,90A,N-Channel Power MOSFET
    IPB034N06N3

    Mfr.#: IPB034N06N3

    OMO.#: OMO-IPB034N06N3-1190

    Neu und Original
    IPB034N06N3GATMA1

    Mfr.#: IPB034N06N3GATMA1

    OMO.#: OMO-IPB034N06N3GATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 60V 100A TO263-7
    IPB034N06N3 G

    Mfr.#: IPB034N06N3 G

    OMO.#: OMO-IPB034N06N3-G-126

    IGBT Transistors MOSFET N-Ch 60V 100A D2PAK-6
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2500
    Menge eingeben:
    Der aktuelle Preis von IPB034N06L3 G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,96 $
    0,96 $
    10
    0,91 $
    9,13 $
    100
    0,87 $
    86,54 $
    500
    0,82 $
    408,65 $
    1000
    0,77 $
    769,20 $
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