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NSBA123EDXV6T1G

NSBA123EDXV6T1G
Mfr. #:
NSBA123EDXV6T1G
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NSBA123EDXV6T1G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSBA123EDXV6T1G DatasheetNSBA123EDXV6T1G Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren – vorgespannt
RoHS:
Y
Aufbau:
Dual
Polarität des Transistors:
PNP
Typischer Eingangswiderstand:
2.2 kOhms
Typisches Widerstandsverhältnis:
1
Montageart:
SMD/SMT
Paket / Koffer:
SOT-563-6
DC-Kollektor/Basisverstärkung hfe Min:
8
Kollektor- Emitterspannung VCEO Max:
50 V
Kontinuierlicher Kollektorstrom:
- 0.1 A
Spitzen-DC-Kollektorstrom:
100 mA
Pd - Verlustleistung:
357 mW
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
NSBA123EDXV6
Verpackung:
Spule
DC-Stromverstärkung hFE Max:
8
Höhe:
0.55 mm
Länge:
1.6 mm
Breite:
1.2 mm
Marke:
ON Semiconductor
Produktart:
BJTs – Bipolartransistoren – Vorgespannt
Werkspackungsmenge:
4000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.000106 oz
Tags
NSBA123E, NSBA123, NSBA12, NSBA1, NSBA, NSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
***emi
50V Dual PNP Bipolar Digital Transistor
***ical
Trans Digital BJT PNP 50V 100mA 500mW 6-Pin SOT-563 T/R
***ponent Stockers
100 mA 50 V 2 CHANNEL PNP Si SMALL SIGNAL TRANSISTOR
***ark
Brt Transistor, 50V, 2.2K/2.2K, Sot-563; Digital Transistor Polarity:dual Pnp; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:2.2Kohm; Base-Emitter Resistor R2:2.2Kohm Rohs Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
NSBA123EDXV6T1G
DISTI # 26621077		ON SemiconductorTrans Digital BJT PNP 50V 100mA Automotive 6-Pin SOT-563 T/R
RoHS: Compliant		32000
  • 8000:$0.1260
NSBA123EDXV6T1G
DISTI # NSBA123EDXV6T1GOS-ND		ON SemiconductorTRANS 2PNP PREBIAS 0.5W SOT563
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Limited Supply - Call
    NSBA123EDXV6T1G
    DISTI # V36:1790_07278063    		ON SemiconductorTrans Digital BJT PNP 50V 100mA Automotive 6-Pin SOT-563 T/R
    RoHS: Compliant    		0
    • 8000000:$0.0727
    • 4000000:$0.0730
    • 800000:$0.0909
    • 80000:$0.1210
    • 8000:$0.1260
    NSBA123EDXV6T1G
    DISTI # NSBA123EDXV6T1G    		ON SemiconductorTrans Digital BJT PNP 50V 0.1A 6-Pin SOT-563 T/R - Tape and Reel (Alt: NSBA123EDXV6T1G)
    RoHS: Compliant
    Min Qty: 8000
    Container: Reel    		Americas - 0
    • 80000:$0.0739
    • 40000:$0.0749
    • 24000:$0.0759
    • 16000:$0.0769
    • 8000:$0.0779
    NSBA123EDXV6T1G
    DISTI # 49X8922    		ON SemiconductorBRT TRANSISTOR, 50V, 2.2K/2.2K, SOT-563,Digital Transistor Polarity:Dual PNP,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:2.2kohm,Base-Emitter Resistor R2:2.2kohm RoHS Compliant: Yes0
    • 2500:$0.1070
    • 1000:$0.1260
    • 500:$0.1550
    • 250:$0.1820
    • 100:$0.2160
    • 50:$0.2580
    • 25:$0.3090
    • 1:$0.4030
    NSBA123EDXV6T1G
    DISTI # 42K2303    		ON SemiconductorBRT TRANSISTOR, 50V, 2.2K/2.2K, SOT-563,Digital Transistor Polarity:Dual PNP,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:2.2kohm,Base-Emitter Resistor R2:2.2kohm RoHS Compliant: Yes0
    • 30000:$0.0780
    • 18000:$0.0860
    • 12000:$0.0930
    • 6000:$0.1040
    • 3000:$0.1190
    • 1:$0.1260
    NSBA123EDXV6T1G
    DISTI # 863-NSBA123EDXV6T1G    		ON SemiconductorBipolar Transistors - Pre-Biased 100mA 50V Dual PNP
    RoHS: Compliant    		7960
    • 1:$0.3500
    • 10:$0.2660
    • 100:$0.1440
    • 1000:$0.1080
    • 4000:$0.0930
    • 8000:$0.0870
    • 24000:$0.0800
    • 48000:$0.0770
    • 100000:$0.0740
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1990
    Menge eingeben:
    Der aktuelle Preis von NSBA123EDXV6T1G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,35 $
    0,35 $
    10
    0,27 $
    2,66 $
    100
    0,14 $
    14,40 $
    1000
    0,11 $
    108,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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