BSZ16DN25NS3GATMA1

Mfr. #:: BSZ16DN25NS3GATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-CH 250V 10.9A 8TSDSON
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSZ16DN25NS3GATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Tags: BSZ16D, BSZ16, BSZ1, BSZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSZ16DN25NS3GATMA1 Beschreibung

***ure Electronics: Single N-Channel 250 V 165 mOhm 8.6 nC OptiMOS Power Mosfet - TSDSON-8

***ical: Trans MOSFET N-CH 250V 10.9A Automotive 8-Pin TSDSON EP T/R

***et Europe: Trans MOSFET N-CH 250V 10.9A 8-Pin TSDSON T/R

***p One Stop Japan: Trans MOSFET N-CH 250V 10.9A 8-Pin TSDSON EP

***i-Key: MOSFET N-CH 250V 10.9A 8TDSON

***ronik: N-CH 250V 10,9A 165mOhm TSDSON8

***ark: TRENCH >=100V

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 250V, 10.9A, TSDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:10.9A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.146ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:62.5W; Transistor Case Style:TSDSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 3 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CANALE N, 250V, 10,9A, TSDSON; Polarità Transistor:Canale N; Corrente Continua di Drain Id:10.9A; Tensione Drain Source Vds:250V; Resistenza di Attivazione Rds(on):0.146ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:62.5W; Modello Case Transistor:TSDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS 3 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Infineon's 250V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS comliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest Power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS)

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSZ16DN25NS3GATMA1 DISTI # V36:1790_06383962	Infineon Technologies AG	Trans MOSFET N-CH 250V 10.9A 8-Pin TSDSON EP T/R RoHS: Compliant	5000	5000000:$0.7905 2500000:$0.7909 500000:$0.8333 50000:$0.9128 5000:$0.9263
BSZ16DN25NS3GATMA1 DISTI # V72:2272_06383962	Infineon Technologies AG	Trans MOSFET N-CH 250V 10.9A 8-Pin TSDSON EP T/R RoHS: Compliant	0
BSZ16DN25NS3GATMA1 DISTI # BSZ16DN25NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 250V 10.9A 8TSDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8840In Stock	1000:$0.8868 500:$1.0703 100:$1.3027 10:$1.6210 1:$1.8000
BSZ16DN25NS3GATMA1 DISTI # BSZ16DN25NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 250V 10.9A 8TSDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8840In Stock	1000:$0.8868 500:$1.0703 100:$1.3027 10:$1.6210 1:$1.8000
BSZ16DN25NS3GATMA1 DISTI # BSZ16DN25NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 250V 10.9A 8TSDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	5000In Stock	10000:$0.7521 5000:$0.7719
BSZ16DN25NS3GATMA1 DISTI # BSZ16DN25NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 250V 10.9A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ16DN25NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.7179 30000:$0.7309 20000:$0.7569 10000:$0.7849 5000:$0.8139
BSZ16DN25NS3GATMA1 DISTI # SP000781800	Infineon Technologies AG	Trans MOSFET N-CH 250V 10.9A 8-Pin TSDSON T/R (Alt: SP000781800) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	50000:€0.6589 30000:€0.7089 20000:€0.7689 10000:€0.8379 5000:€1.0249
BSZ16DN25NS3GATMA1 DISTI # 13AC8356	Infineon Technologies AG	MOSFET, N-CH, 250V, 10.9A, TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:10.9A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.146ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	0	1000:$0.8280 500:$1.0000 250:$1.0700 100:$1.1400 50:$1.2400 25:$1.3300 10:$1.4200 1:$1.6800
BSZ16DN25NS3GATMA1 DISTI # 726-BSZ16DN25NS3GATM	Infineon Technologies AG	MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 RoHS: Compliant	9950	1:$1.6600 10:$1.4100 100:$1.1300 500:$0.9900 1000:$0.8200 2500:$0.7640 5000:$0.7360 10000:$0.7070
BSZ16DN25NS3 G DISTI # 726-BSZ16DN25NS3G	Infineon Technologies AG	MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 RoHS: Compliant	4900	1:$1.6600 10:$1.4100 100:$1.1300 500:$0.9900 1000:$0.8200 2500:$0.7640 5000:$0.7360
BSZ16DN25NS3GATMA1 DISTI # 2725827	Infineon Technologies AG	MOSFET, N-CH, 250V, 10.9A, TSDSON RoHS: Compliant	5000	1000:$1.4200 500:$1.7200 100:$2.2100 10:$2.7500 1:$3.0400
BSZ16DN25NS3GATMA1 DISTI # 2725827	Infineon Technologies AG	MOSFET, N-CH, 250V, 10.9A, TSDSON	4985	100:£1.0900 10:£1.4100 1:£1.8200

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: BSZ16DN25NS3 G OMO.#: OMO-BSZ16DN25NS3-G	MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
	Mfr.#: BSZ16DN25NS3GATMA1 OMO.#: OMO-BSZ16DN25NS3GATMA1	MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
	Mfr.#: BSZ16DN25NS3 G OMO.#: OMO-BSZ16DN25NS3-G-1190	MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
	Mfr.#: BSZ16DN25NS3 G(SP0007818 OMO.#: OMO-BSZ16DN25NS3-G-SP0007818-1190	Neu und Original
	Mfr.#: BSZ16DN25NS3G OMO.#: OMO-BSZ16DN25NS3G-1190	Neu und Original
	Mfr.#: BSZ16DN25NS3GATMA1 OMO.#: OMO-BSZ16DN25NS3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 250V 10.9A 8TSDSON

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 5000
Menge eingeben:

Der aktuelle Preis von BSZ16DN25NS3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,06 $~~; ~~1,06 $~~

10: ~~1,01 $~~; ~~10,08 $~~

100: ~~0,95 $~~; ~~95,45 $~~

500: ~~0,90 $~~; ~~450,70 $~~

1000: ~~0,85 $~~; ~~848,40 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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BSZ16DN25NS3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes