SI1427EDH-T1-GE3

Name: Vishay - SI1427EDH-T1-GE3
Brand: Vishay
SKU: OMO-2985695
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI1427EDH-T1-GE3
Hersteller:: Vishay
Beschreibung:: MOSFET P-CH 20V 2A SOT-363
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI1427EDH-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: Vishay Siliconix

Produktkategorie: FETs - Einzeln

Serie: GrabenFETR

Verpackung: Digi-ReelR Alternative Verpackung

Handelsname: TrenchFET

Paket-Koffer: 6-TSSOP, SC-88, SOT-363

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 1 Channel

Lieferanten-Geräte-Paket: SC-70-6 (SOT-363)

FET-Typ: MOSFET P-Kanal, Metalloxid

Leistung max: 2.8W

Transistor-Typ: 1 P-Channel

Drain-zu-Source-Spannung-Vdss: 20V

Eingangskapazität-Ciss-Vds: -

FET-Funktion: Standard

Strom-Dauer-Drain-Id-25°C: 2A (Tc)

Rds-On-Max-Id-Vgs: 64 mOhm @ 3A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

Gate-Lade-Qg-Vgs: 21nC @ 8V

Transistor-Polarität: P-Kanal

Tags: SI142, SI14, SI1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI1427EDH-T1-GE3 Beschreibung

***ark: MOSFET, P CH, W/ESD, 20V, 2A, SOT363; Transistor Polarity:P Channel; Continuous

***ical: Trans MOSFET P-CH 20V 2A 6-Pin SC-70 T/R

***nell: MOSFET, P CH, W/ESD, 20V, 2A, SOT363; Transistor Polarity:P Channel; Continuous Drain Current Id:-2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:2.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-363; No. of Pins:6; MSL:-; Operating Temperature Range:-55°C to +150°C

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI1427EDH-T1-GE3 DISTI # V72:2272_09216753	Vishay Intertechnologies	Trans MOSFET P-CH 20V 2A 6-Pin SC-70 T/R RoHS: Compliant	0
SI1427EDH-T1-GE3 DISTI # V36:1790_09216753	Vishay Intertechnologies	Trans MOSFET P-CH 20V 2A 6-Pin SC-70 T/R RoHS: Compliant	0
SI1427EDH-T1-GE3 DISTI # SI1427EDH-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 20V 2A SOT-363 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	30000:$0.0980 15000:$0.1066 6000:$0.1139 3000:$0.1213
SI1427EDH-T1-GE3 DISTI # SI1427EDH-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 20V 2A SOT-363 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.1363 500:$0.1817 100:$0.2423 10:$0.3560 1:$0.4400
SI1427EDH-T1-GE3 DISTI # SI1427EDH-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 20V 2A SOT-363 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.1363 500:$0.1817 100:$0.2423 10:$0.3560 1:$0.4400
SI1427EDH-T1-GE3 DISTI # SI1427EDH-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 2A 6-Pin SC-70 T/R - Tape and Reel (Alt: SI1427EDH-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.0889 18000:$0.0919 12000:$0.0939 6000:$0.0979 3000:$0.1009
SI1427EDH-T1-GE3 DISTI # 70AC6488	Vishay Intertechnologies	MOSFET, P-CH, -20V, -2A, 150DEG C, 2.8W,Transistor Polarity:P Channel,Continuous Drain Current Id:-2A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.05ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-400mV RoHS Compliant: Yes	0	1000:$0.1270 500:$0.1700 250:$0.1910 100:$0.2120 50:$0.2630 25:$0.3140 1:$0.4650
SI1427EDH-T1-GE3 DISTI # 65T1683	Vishay Intertechnologies	MOSFET Transistor, P Channel, -2 A, -20 V, 0.05 ohm, -4.5 V, -400 mV	0	50000:$0.0910 30000:$0.1000 20000:$0.1080 10000:$0.1220 5000:$0.1390 1:$0.1470
SI1427EDH-T1-GE3 DISTI # 78-SI1427EDH-T1-GE3	Vishay Intertechnologies	MOSFET -20V Vds 8V Vgs SC70-6 RoHS: Compliant	5	1:$0.4500 10:$0.3100 100:$0.2090 500:$0.1670 1000:$0.1250 3000:$0.1150 6000:$0.1080 9000:$0.1010 24000:$0.0930
SI1427EDH-T1-GE3 DISTI # 2056679	Vishay Intertechnologies	MOSFET, P CH, W/ESD, 20V, 2A, SOT363 RoHS: Compliant	0	1000:$0.1940 500:$0.2590 100:$0.3230 10:$0.4790 1:$0.7070
SI1427EDH-T1-GE3 DISTI # 2056679RL	Vishay Intertechnologies	MOSFET, P CH, W/ESD, 20V, 2A, SOT363 RoHS: Compliant	0	1000:$0.1940 500:$0.2590 100:$0.3230 10:$0.4790 1:$0.7070
SI1427EDH-T1-GE3 DISTI # 2056679	Vishay Intertechnologies	MOSFET, P CH, W/ESD, 20V, 2A, SOT363	0	500:£0.1320 250:£0.1490 100:£0.1650 25:£0.2680 5:£0.2790

Verwandte Produkte

Bild

Teil #

Beschreibung

Mfr.#: SI1427EDH-T1-GE3

OMO.#: OMO-SI1427EDH-T1-GE3

MOSFET -20V Vds 8V Vgs SC70-6

Mfr.#: SI1427EDH

OMO.#: OMO-SI1427EDH-1190

Neu und Original

Mfr.#: SI1427EDH-T1-GE3

OMO.#: OMO-SI1427EDH-T1-GE3-VISHAY

MOSFET P-CH 20V 2A SOT-363

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3500
Menge eingeben:

Der aktuelle Preis von SI1427EDH-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,13 $~~; ~~0,13 $~~

10: ~~0,13 $~~; ~~1,27 $~~

100: ~~0,12 $~~; ~~12,00 $~~

500: ~~0,11 $~~; ~~56,65 $~~

1000: ~~0,11 $~~; ~~106,70 $~~

Beginnen mit

SI142 11
SI14 148
SI1 1080

SI1427EDH-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes