GS8161Z18DGT-400

GS8161Z18DGT-400
Mfr. #:
GS8161Z18DGT-400
Hersteller:
GSI Technology
Beschreibung:
SRAM 2.5 or 3.3V 1M x 18 18M
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
GS8161Z18DGT-400 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
GS8161Z18DGT-400 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
GSI-Technologie
Produktkategorie:
SRAM
RoHS:
Y
Speichergröße:
18 Mbit
Organisation:
1 M x 18
Zugriffszeit:
4 ns
Maximale Taktfrequenz:
400 MHz
Oberflächentyp:
Parallel
Versorgungsspannung - Max.:
3.6 V
Versorgungsspannung - Min.:
2.3 V
Versorgungsstrom - Max.:
255 mA, 335 mA
Minimale Betriebstemperatur:
0 C
Maximale Betriebstemperatur:
+ 70 C
Montageart:
SMD/SMT
Paket / Koffer:
TQFP-100
Verpackung:
Tablett
Speichertyp:
SDR
Serie:
GS8161Z18DGT
Typ:
NBT
Marke:
GSI-Technologie
Feuchtigkeitsempfindlich:
ja
Produktart:
SRAM
Werkspackungsmenge:
36
Unterkategorie:
Speicher & Datenspeicherung
Handelsname:
NBT-SRAM
Tags
GS8161Z18DGT, GS8161Z18DG, GS8161Z18D, GS8161Z1, GS8161Z, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 2.5V/3.3V 18M-Bit 1M x 18 4ns/2.5ns 100-Pin TQFP
NBT SRAMs
GSI Technology NBT SRAMs are 144Mbit and 288Mbit Synchronous Static SRAMs that allow utilization of all available bus bandwidth. The SRAMs achieve this by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The devices' simplified interface is designed to use a data bus's maximum bandwidth. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. 
Bild Teil # Beschreibung
GS8161Z18DGT-200

Mfr.#: GS8161Z18DGT-200

OMO.#: OMO-GS8161Z18DGT-200

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGD-250V

Mfr.#: GS8161Z18DGD-250V

OMO.#: OMO-GS8161Z18DGD-250V

SRAM 1.8/2.5V 1M x 18 18M
GS8161Z18DGD-150I

Mfr.#: GS8161Z18DGD-150I

OMO.#: OMO-GS8161Z18DGD-150I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DD-150IV

Mfr.#: GS8161Z18DD-150IV

OMO.#: OMO-GS8161Z18DD-150IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161Z18DGT-200IV

Mfr.#: GS8161Z18DGT-200IV

OMO.#: OMO-GS8161Z18DGT-200IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161Z18DGD-250IV

Mfr.#: GS8161Z18DGD-250IV

OMO.#: OMO-GS8161Z18DGD-250IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161Z18DD-150

Mfr.#: GS8161Z18DD-150

OMO.#: OMO-GS8161Z18DD-150

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGD-400I

Mfr.#: GS8161Z18DGD-400I

OMO.#: OMO-GS8161Z18DGD-400I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DD-375

Mfr.#: GS8161Z18DD-375

OMO.#: OMO-GS8161Z18DD-375

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGT-200

Mfr.#: GS8161Z18DGT-200

OMO.#: OMO-GS8161Z18DGT-200-241

SRAM Chip Sync Dual 2.5V/3.3V 18M-Bit 1M x 18 6.5ns/3ns 100-Pin TQFP (Alt: GS8161Z18DGT-200)
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von GS8161Z18DGT-400 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
36
23,79 $
856,44 $
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