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IPP60R099P6XKSA1

IPP60R099P6XKSA1
Mfr. #:
IPP60R099P6XKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET HIGH POWER PRICE/PERFORM
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPP60R099P6XKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPP60R099P6XKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
37.9 A
Rds On - Drain-Source-Widerstand:
89 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
70 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
278 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Serie:
CoolMOS P6
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
50 ns
Typische Einschaltverzögerungszeit:
20 ns
Teil # Aliase:
IPP60R099P6 SP001114650
Gewichtseinheit:
0.211644 oz
Tags
IPP60R099P, IPP60R099, IPP60R09, IPP60R0, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 99 mOhm 70 nC CoolMOS™ Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-220 Tube
***ark
Mosfet, N-Ch, 600V, 37.9A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:37.9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.089Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPP60R099P6XKSA1
DISTI # V99:2348_06378560		Infineon Technologies AGTrans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		500
  • 500:$3.5790
  • 250:$3.9820
  • 100:$4.2130
  • 50:$4.4480
  • 25:$4.6950
  • 10:$4.9370
  • 1:$6.3690
IPP60R099P6XKSA1
DISTI # V36:1790_06378560		Infineon Technologies AGTrans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		0
    IPP60R099P6XKSA1
    DISTI # 33360223    		Infineon Technologies AGTrans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-220 Tube
    RoHS: Compliant    		500
    • 500:$2.6180
    • 250:$2.7880
    • 100:$3.0980
    • 50:$3.4420
    • 25:$3.8240
    • 10:$4.2490
    • 3:$5.7900
    IPP60R099P6XKSA1
    DISTI # SP001114650    		Infineon Technologies AGTrans MOSFET N-CH 650V 37.9A 3-Pin TO-220 Tube (Alt: SP001114650)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 5
    • 1000:€2.0900
    • 500:€2.1900
    • 100:€2.2900
    • 50:€2.3900
    • 25:€2.4900
    • 10:€2.5900
    • 1:€2.8900
    IPP60R099P6XKSA1
    DISTI # IPP60R099P6XKSA1    		Infineon Technologies AGTrans MOSFET N-CH 650V 37.9A 3-Pin TO-220 Tube - Bulk (Alt: IPP60R099P6XKSA1)
    RoHS: Compliant
    Min Qty: 142
    Container: Bulk    		Americas - 0
    • 710:$2.1900
    • 1420:$2.1900
    • 426:$2.2900
    • 284:$2.3900
    • 142:$2.4900
    IPP60R099P6XKSA1
    DISTI # IPP60R099P6XKSA1    		Infineon Technologies AGTrans MOSFET N-CH 650V 37.9A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP60R099P6XKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube    		Americas - 0
    • 5000:$2.3900
    • 2000:$2.4900
    • 3000:$2.4900
    • 1000:$2.5900
    • 500:$2.6900
    IPP60R099P6XKSA1
    DISTI # IPP60R099P6    		Infineon Technologies AGTrans MOSFET N-CH 650V 37.9A 3-Pin TO-220 Tube (Alt: IPP60R099P6)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube    		Asia - 0
      IPP60R099P6XKSA1
      DISTI # 12AC9729      		Infineon Technologies AGMOSFET, N-CH, 600V, 37.9A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:37.9A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.089ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes980
      • 500:$3.7600
      • 250:$4.1500
      • 100:$4.3400
      • 50:$4.5400
      • 25:$4.7500
      • 10:$4.9500
      • 1:$5.7500
      IPP60R099P6
      DISTI # 726-IPP60R099P6      		Infineon Technologies AGMOSFET HIGH POWER PRICE/PERFORM
      RoHS: Compliant      		0
      • 1:$5.1100
      • 10:$4.3400
      • 100:$3.7700
      • 250:$3.5700
      • 500:$3.2000
      IPP60R099P6XKSA1
      DISTI # 726-IPP60R099P6XKSA1      		Infineon Technologies AGMOSFET HIGH POWER PRICE/PERFORM
      RoHS: Compliant      		0
      • 1:$5.1100
      • 10:$4.3400
      • 100:$3.7700
      • 250:$3.5700
      • 500:$3.2000
      • 1000:$2.7000
      • 2500:$2.5700
      IPP60R099P6XKSA1Infineon Technologies AGPower Field-Effect Transistor
      RoHS: Compliant      		13
      • 1000:$2.3300
      • 500:$2.4500
      • 100:$2.5500
      • 25:$2.6600
      • 1:$2.8700
      IPP60R099P6XKSA1
      DISTI # 1300924P      		Infineon Technologies AGMOSFET N-CH 600V 37A COOLMOS P6 TO-220, TU2000
      • 1000:£2.0800
      • 500:£2.1200
      • 100:£2.6000
      • 10:£3.0400
      IPP60R099P6XKSA1
      DISTI # 2709868      		Infineon Technologies AGMOSFET, N-CH, 600V, 37.9A, TO-220
      RoHS: Compliant      		0
      • 1000:$4.5200
      • 500:$5.3600
      • 100:$6.6100
      • 10:$8.0600
      • 1:$9.0200
      IPP60R099P6XKSA1
      DISTI # 2709868      		Infineon Technologies AGMOSFET, N-CH, 600V, 37.9A, TO-2200
      • 100:£2.9000
      • 10:£3.3400
      • 1:£4.3700
      Bild Teil # Beschreibung
      IPP60R099CPXKSA1

      Mfr.#: IPP60R099CPXKSA1

      OMO.#: OMO-IPP60R099CPXKSA1

      		 MOSFET N-Ch 650V 31A TO220-3 CoolMOS CP
      IPP60R099C6

      Mfr.#: IPP60R099C6

      OMO.#: OMO-IPP60R099C6

      		 MOSFET N-Ch 650V 38A TO220-3 CoolMOS C6
      IPP60R099C66R099C6

      Mfr.#: IPP60R099C66R099C6

      OMO.#: OMO-IPP60R099C66R099C6-1190

      		 Neu und Original
      IPP60R099C6XKSA1

      Mfr.#: IPP60R099C6XKSA1

      OMO.#: OMO-IPP60R099C6XKSA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 600V 37.9A TO220
      IPP60R099C7XKSA1

      Mfr.#: IPP60R099C7XKSA1

      OMO.#: OMO-IPP60R099C7XKSA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 600V 22A TO220-3
      IPP60R099CP,6R099,

      Mfr.#: IPP60R099CP,6R099,

      OMO.#: OMO-IPP60R099CP-6R099--1190

      		 Neu und Original
      IPP60R099CP/6R099

      Mfr.#: IPP60R099CP/6R099

      OMO.#: OMO-IPP60R099CP-6R099-1190

      		 Neu und Original
      IPP60R099CPA 6R099A

      Mfr.#: IPP60R099CPA 6R099A

      OMO.#: OMO-IPP60R099CPA-6R099A-1190

      		 Neu und Original
      IPP60R099CPA

      Mfr.#: IPP60R099CPA

      OMO.#: OMO-IPP60R099CPA-128

      		 MOSFET N-Ch 650V 31A TO220-3 CoolMOS CPA
      IPP60R099P6XKSA1

      Mfr.#: IPP60R099P6XKSA1

      OMO.#: OMO-IPP60R099P6XKSA1-INFINEON-TECHNOLOGIES

      		 MOSFET HIGH POWER PRICE/PERFORM
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3000
      Menge eingeben:
      Der aktuelle Preis von IPP60R099P6XKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      5,11 $
      5,11 $
      10
      4,34 $
      43,40 $
      100
      3,77 $
      377,00 $
      250
      3,57 $
      892,50 $
      500
      3,20 $
      1 600,00 $
      1000
      2,70 $
      2 700,00 $
      2500
      2,57 $
      6 425,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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