OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

STU95N2LH5

STU95N2LH5
Mfr. #:
STU95N2LH5
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-CH 25V 80A TO220-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STU95N2LH5 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STU95N2LH5 Mehr Informationen STU95N2LH5 Product Details
Produkteigenschaft
Attributwert
Tags
STU95, STU9, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 25 V, 0.0038 Ohm, 80 A - IPAK Power MOSFET
***et
Trans MOSFET N-CH 25V 80A 3-Pin(3+Tab) TO-220 Tube
***r Electronics
Power Field-Effect Transistor, 80A I(D), 25V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***nell
MOSFET, N CH, 25V, 80A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0044ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 70W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 25V; Voltage Vgs Max: 22V; Voltage Vgs Rds on Measurement: 10V
***icroelectronics
N-channel 30 V, 4.2 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
***ical
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
N-Channel 30 V 4.7 mO Flange Mount STripFET™ VI DeepGATE™ Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N CH, 30V, 80A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Product Range:- RoHS Compliant: Yes
***ure Electronics
N-Channel 30 V 0.005 O Flange Mount STripFET™ V Power MOSFET - TO-220
***icroelectronics
N-channel 30 V, 0.0042 Ohm , 80 A, TO-220; Power MOSFETs
***nell
MOSFET, N CH, 30V, 80A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0046ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 70W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 80A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 22V; Voltage Vgs Rds on Measurement: 10V
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***eco
Transistor STP80NF03L-04 N-Channel MOSFET 30 Volt 80 Amp TO-220
*** Source Electronics
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 30V 80A TO-220
***ure Electronics
N-Channel 30 V 0.004 Ohm Flange Mount STripFET II Power Mosfet - TO-220
***ponent Stockers USA
80 A 30 V 0.0055 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
N Channel Mosfet, 30V, 80A, To-220; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; On Resistance Rds(On):0.004Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes
***ure Electronics
Single N-Channel 30 V 4.2 mOhm 38 nC OptiMOS™ Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 30V 70A 3-Pin(3+Tab) TO-220 Tube
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, PG-TO220-3, RoHS
***nell
MOSFET, N-CH, 30V, 70A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.2V; Power Dissipation Pd: 79W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.2 / Gate-Source Voltage V = 20 / Fall Time ns = 4.4 / Rise Time ns = 5.6 / Turn-OFF Delay Time ns = 28 / Turn-ON Delay Time ns = 7.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 79
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***i-Key
MOSFET N-CH 30V 80A TO-220
***ark
MOSFET; Continuous Drain Current, Id:100A; On-Resistance, Rds(on):0.007ohm; Package/Case:3-TO-220; Drain-Source Breakdown Voltage:30V; Gate-Source Voltage:3V; Leaded Process Compatible:Yes; Mounting Type:Through Hole RoHS Compliant: Yes
***ment14 APAC
MOSFET, N LOGIC TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Power Dissipation Pd:125W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Temperature:25°C; Full Power Rating Temperature:25°C; Package / Case:TO-220 (SOT-78B); Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:300A; Voltage Vds:30V; Voltage Vgs th Max:2V
***ure Electronics
Single N-Channel 30 V 5.5 mOhm 31 nC OptiMOS™ Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-220 Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 50A I(D), 30V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 50A, 30V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:68W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:68W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO220-3, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Teil # Mfg. Beschreibung Aktie Preis
STU95N2LH5
DISTI # 497-12703-5-ND		STMicroelectronicsMOSFET N-CH 25V 80A TO220-3
RoHS: Compliant
Min Qty: 3000
Container: Tube		Limited Supply - Call
    STU95N2LH5
    DISTI # 511-STU95N2LH5    		STMicroelectronicsMOSFET N-Ch, 25V-0.0038ohms 80A
    RoHS: Compliant    		0
      Bild Teil # Beschreibung
      STU95N3LLH6

      Mfr.#: STU95N3LLH6

      OMO.#: OMO-STU95N3LLH6

      		 MOSFET N-channel 30 V 80 A DPAK
      STU95N2LH5

      Mfr.#: STU95N2LH5

      OMO.#: OMO-STU95N2LH5-STMICROELECTRONICS

      		 MOSFET N-CH 25V 80A TO220-3
      STU95N3LLH6

      Mfr.#: STU95N3LLH6

      OMO.#: OMO-STU95N3LLH6-STMICROELECTRONICS

      		 MOSFET N-CH 30V 80A IPAK
      STU95N4F3

      Mfr.#: STU95N4F3

      OMO.#: OMO-STU95N4F3-STMICROELECTRONICS

      		 MOSFET N-CH 40V 80A IPAK
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von STU95N2LH5 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,00 $
      0,00 $
      10
      0,00 $
      0,00 $
      100
      0,00 $
      0,00 $
      500
      0,00 $
      0,00 $
      1000
      0,00 $
      0,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
      Beginnen mit
      Neueste Produkte
      • MDmesh™ M6 Series 600 V Power MOSFETs
        MDmesh™ M6 Series 600 V Power MOSFETs
        STMicroelectronics’ MDmesh M6 series power MOSFETs in PowerFLAT 5 mm x 6 mm high voltage packages have reduced switching loss and low gate input resistance.
      • LDCL015 Series
        LDCL015 Series
        STMicroelectronics' LDCL015 series are ultra-low drop, capless linear regulators with low noise and low current consumption.
      • VNI8200XP Monolithic 8-Channel Driver
        VNI8200XP Monolithic 8-Channel Driver
        STMicroelectronics' monolithic octal driver IC has low supply current and integrated protection features that prevent against overload.
      • Ultra-Low Power Arm® Cortex®-M4 MCUs
        Ultra-Low Power Arm® Cortex®-M4 MCUs
        STMicroelectronics' ultra-low power Arm® Cortex®-M4 MCUs are available in low-pin-count-packages ranging from 32-pin LQFP to 64-pin BGA including 36-pin WLCSP.
      • LSM303C e-compass Accelerometer
        LSM303C e-compass Accelerometer
        STMicroelectronics' LSM303C accelerometers are tiny which helps to save board space. Used for advanced navigation and motion sensitive applications.
      More Newest Products
      Top