NGTB20N120IHRWG

NGTB20N120IHRWG
Mfr. #:
NGTB20N120IHRWG
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors 1200V/20A RC IGBT FSII
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NGTB20N120IHRWG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB20N120IHRWG DatasheetNGTB20N120IHRWG Datasheet (P4-P6)NGTB20N120IHRWG Datasheet (P7-P9)NGTB20N120IHRWG Datasheet (P10)
ECAD Model:
Mehr Informationen:
NGTB20N120IHRWG Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
2.1 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
40 A
Pd - Verlustleistung:
384 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
NGTB20N120IHR
Verpackung:
Rohr
Marke:
ON Semiconductor
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
30
Unterkategorie:
IGBTs
Gewichtseinheit:
0.229281 oz
Tags
NGTB20N120IHR, NGTB20N120I, NGTB20N12, NGTB20N1, NGTB20N, NGTB20, NGTB2, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 40A 384000mW 3-Pin(3+Tab) TO-247 Tube
***Semiconductor
IGBT, 1200V 20A FS2-RC Induction Heating
***Components
In a Tube of 30, ON Semiconductor NGTB20N120IHRWG IGBT
***ment14 APAC
TRANSISTOR, IGBT, 2.1V, 40A, TO-247-3
NGTB20Nx IGBTs with Monolithic Free Wheeling Diode
ON Semiconductor's NGTB20Nx IGBTs with Monolithic Free Wheeling Diode are Insulated Gate Bipolar Transistors (IGBTs) that features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage with minimal switching loss. Typical applications for these IGBTs include inductive heating, consumer appliances, resonant and soft switching.Learn More
Teil # Mfg. Beschreibung Aktie Preis
NGTB20N120IHRWG
DISTI # 26897924
ON SemiconductorTrans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
45180
  • 5000:$2.1582
  • 2500:$2.2473
  • 1000:$2.3562
  • 500:$2.8017
  • 250:$3.1185
  • 180:$3.2868
NGTB20N120IHRWG
DISTI # NGTB20N120IHRWGOS-ND
ON SemiconductorIGBT 1200V 40A 384W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
84In Stock
  • 2520:$2.3800
  • 510:$2.9631
  • 120:$3.4808
  • 30:$4.0163
  • 10:$4.2480
  • 1:$4.7300
NGTB20N120IHRWG
DISTI # V36:1790_07278481
ON SemiconductorTrans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
0
    NGTB20N120IHRWG
    DISTI # NGTB20N120IHRWG
    ON SemiconductorTrans IGBT Chip N-CH 1200V 40A 3-Pin TO-247 Rail - Bulk (Alt: NGTB20N120IHRWG)
    Min Qty: 133
    Container: Bulk
    Americas - 0
    • 665:$2.2900
    • 1330:$2.2900
    • 133:$2.3900
    • 266:$2.3900
    • 399:$2.3900
    NGTB20N120IHRWG
    DISTI # 45AC7429
    ON SemiconductorTRANSISTOR, IGBT, 2.1V, 40A, TO-247-3,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):2.1V,Power Dissipation Pd:384W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins, RoHS Compliant: Yes63
    • 500:$2.8600
    • 250:$3.1800
    • 100:$3.3500
    • 50:$3.5200
    • 25:$3.7000
    • 10:$3.8700
    • 1:$4.5500
    NGTB20N120IHRWG.
    DISTI # 14AC9854
    ON SemiconductorDC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):2.1V,Power Dissipation Pd:384W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:- RoHS Compliant: Yes0
    • 500:$2.8600
    • 250:$3.1800
    • 100:$3.3500
    • 50:$3.5200
    • 25:$3.7000
    • 10:$3.8700
    • 1:$4.5500
    NGTB20N120IHRWG
    DISTI # 863-NGTB20N120IHRWG
    ON SemiconductorIGBT Transistors 1200V/20A RC IGBT FSII
    RoHS: Compliant
    318
    • 1:$4.5000
    • 10:$3.8300
    • 100:$3.3200
    • 250:$3.1500
    • 500:$2.8300
    • 1000:$2.3800
    • 2500:$2.2700
    NGTB20N120IHRWGON SemiconductorInsulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant
    750
    • 1000:$2.4900
    • 500:$2.6200
    • 100:$2.7300
    • 25:$2.8400
    • 1:$3.0600
    NGTB20N120IHRWG
    DISTI # 7961325
    ON SemiconductorIGBT 1200V 20A FIELD STOPDIODE TO247, PK54
    • 20:£2.8700
    • 2:£3.4850
    NGTB20N120IHRWG
    DISTI # 7961325P
    ON SemiconductorIGBT 1200V 20A FIELD STOPDIODE TO247, TU126
    • 20:£2.8700
    NGTB20N120IHRWGON Semiconductor 2136
      NGTB20N120IHRWG
      DISTI # 2399109
      ON SemiconductorTRANSISTOR, IGBT, 2.1V, 40A, TO-247-3
      RoHS: Compliant
      63
      • 5000:$3.3600
      • 2500:$3.4900
      • 1000:$3.6700
      • 500:$4.3500
      • 250:$4.8500
      • 100:$5.1000
      • 10:$5.8900
      • 1:$6.9200
      NGTB20N120IHRWG
      DISTI # 2399109
      ON SemiconductorTRANSISTOR, IGBT, 2.1V, 40A, TO-247-363
      • 500:£2.2000
      • 250:£2.4500
      • 100:£2.5800
      • 10:£2.9800
      • 1:£3.9100
      NGTB20N120IHRWGON SemiconductorIGBT,1200V,20A,FS2-RC Induction Heating2350
      • 1:$4.0400
      • 100:$3.0300
      • 500:$2.6000
      • 1000:$2.4300
      Bild Teil # Beschreibung
      IR2011SPBF

      Mfr.#: IR2011SPBF

      OMO.#: OMO-IR2011SPBF

      Gate Drivers HI LO SIDE DRVR 200V 1.0A 80ns
      FIN1047MTCX

      Mfr.#: FIN1047MTCX

      OMO.#: OMO-FIN1047MTCX

      Buffers & Line Drivers 3.3V Diff Driver LVDS 4Bit FT HS
      VS-4ESH02-M3/86A

      Mfr.#: VS-4ESH02-M3/86A

      OMO.#: OMO-VS-4ESH02-M3-86A

      Rectifiers Hypfst Rct 4A 200V
      FSQ0265RN

      Mfr.#: FSQ0265RN

      OMO.#: OMO-FSQ0265RN

      AC/DC Converters 2A/650V QRC Power Switch
      LM2576HVT-ADJ/LF03

      Mfr.#: LM2576HVT-ADJ/LF03

      OMO.#: OMO-LM2576HVT-ADJ-LF03

      Switching Voltage Regulators 3A SD Vtg Reg
      P160KN-0QC15B25K

      Mfr.#: P160KN-0QC15B25K

      OMO.#: OMO-P160KN-0QC15B25K

      Potentiometers 16mm Rotary Panel Potentiometer
      IR2011SPBF

      Mfr.#: IR2011SPBF

      OMO.#: OMO-IR2011SPBF-INFINEON-TECHNOLOGIES

      HI/LO SIDE DRVR 8SOIC
      P160KN-0QC15B25K

      Mfr.#: P160KN-0QC15B25K

      OMO.#: OMO-P160KN-0QC15B25K-TT-ELECTRONICS

      Potentiometers 16mm Rotary Panel Potentiomete
      TJT-120

      Mfr.#: TJT-120

      OMO.#: OMO-TJT-120-AMPHENOL-NEXUS-TECHNOLOGIES

      Phone Connectors PHONE CONN THRD FR-MOUNT JACK
      LM2576HVT-ADJ/LF03

      Mfr.#: LM2576HVT-ADJ/LF03

      OMO.#: OMO-LM2576HVT-ADJ-LF03-TEXAS-INSTRUMENTS

      Voltage Regulators - Switching Regulators 3A SD Vtg Reg
      Verfügbarkeit
      Aktie:
      312
      Auf Bestellung:
      2295
      Menge eingeben:
      Der aktuelle Preis von NGTB20N120IHRWG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,79 $
      2,79 $
      10
      2,37 $
      23,70 $
      100
      1,90 $
      190,00 $
      500
      1,66 $
      830,00 $
      1000
      1,37 $
      1 370,00 $
      2500
      1,28 $
      3 200,00 $
      5000
      1,23 $
      6 150,00 $
      10000
      1,18 $
      11 800,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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