S25FL512SAGBHIS10

S25FL512SAGBHIS10
Mfr. #:
S25FL512SAGBHIS10
Hersteller:
Cypress Semiconductor
Beschreibung:
IC FLASH 512M SPI 133MHZ 24BGA FL-S
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
S25FL512SAGBHIS10 Datenblatt
Die Zustellung:
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S25FL512SAGBHIS10 Mehr Informationen S25FL512SAGBHIS10 Product Details
Produkteigenschaft
Attributwert
Tags
S25FL512SAGBHI, S25FL512SAGBH, S25FL512SAGB, S25FL512SAG, S25FL512SA, S25FL512S, S25FL5, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (S
***i-Key
IC FLASH 512M SPI 133MHZ 24BGA
***ark
Tray Pkged / 512-Mbit Cmos 3.0 Volt 65Nm Flash Memory With 133-Mhz Spi (Serial Peripheral Interface) And Multi I/O Bus - 256Kb, Bga-Fab024 In Tray Packing, With Reset#, Enhanced Security
S25FL512S FL-S NOR Flash Memory Devices
Cypress S25FL512S FL-S NOR Flash Memory Devices are VIO VCC 2.7V to 3.6V flash non-volatile memory devices. These devices use 65nm MirrorBit technology. Designed using Eclipse™ architecture with a 512-byte page programming buffer. The 512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512 bytes) in one operation. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via an SPI and supports traditional SPI single bit serial input and output. Optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. The S25FL512S FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO that transfer address. The S25FL512S FL-S transfer address and read data on both edges of the clock. By using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the read transfer rate instruction can match traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL512S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. The S25FL512S FL-S NOR is ideal for code shadowing, XIP, and data storage.
Teil # Mfg. Beschreibung Aktie Preis
S25FL512SAGBHIS10
DISTI # 428-4341-ND
Cypress SemiconductorIC FLASH 512M SPI 133MHZ 24BGA
RoHS: Compliant
Min Qty: 1
Container: Tray
1In Stock
  • 1014:$5.8117
  • 676:$6.0227
  • 338:$6.3327
  • 100:$6.5307
  • 50:$7.2798
  • 25:$7.3056
  • 10:$7.4610
  • 1:$8.1100
S25FL512SAGBHIS10
DISTI # 727-S25FL512SAGBHIS1
Cypress SemiconductorNOR Flash Nor
RoHS: Compliant
334
  • 1:$9.8400
  • 10:$9.0200
  • 25:$8.2000
  • 50:$7.8100
  • 100:$7.3800
  • 250:$6.8200
Bild Teil # Beschreibung
S25FL512SAGBHIS13

Mfr.#: S25FL512SAGBHIS13

OMO.#: OMO-S25FL512SAGBHIS13

NOR Flash Nor
S25FL512SDSBHBC10

Mfr.#: S25FL512SDSBHBC10

OMO.#: OMO-S25FL512SDSBHBC10

NOR Flash Nor
S25FL512SDPBHV21

Mfr.#: S25FL512SDPBHV21

OMO.#: OMO-S25FL512SDPBHV21-1190

Neu und Original
S25FL512SAGBHBC13

Mfr.#: S25FL512SAGBHBC13

OMO.#: OMO-S25FL512SAGBHBC13-CYPRESS-SEMICONDUCTOR

IC 512 MB FLASH MEMORY Automotive, AEC-Q100, FL-S
S25FL512SAGMFAG13

Mfr.#: S25FL512SAGMFAG13

OMO.#: OMO-S25FL512SAGMFAG13-CYPRESS-SEMICONDUCTOR

IC 512 MB FLASH MEMORY
S25FL512SDPMFVG11

Mfr.#: S25FL512SDPMFVG11

OMO.#: OMO-S25FL512SDPMFVG11-CYPRESS-SEMICONDUCTOR

Flash Memory 512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 66-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, SO16-SO3016 IN TUBE PACKING, WITH RESET#
S25FL512SAGMFVR13

Mfr.#: S25FL512SAGMFVR13

OMO.#: OMO-S25FL512SAGMFVR13-CYPRESS-SEMICONDUCTOR

Flash Memory 512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, SO3016 IN T&R PACKING, RESET# + VIO
S25FL512SDPMFV013

Mfr.#: S25FL512SDPMFV013

OMO.#: OMO-S25FL512SDPMFV013-CYPRESS-SEMICONDUCTOR

Flash Memory 512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 66-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, SO3016 IN T&R PACKING
S25FL512SDPBHI213

Mfr.#: S25FL512SDPBHI213

OMO.#: OMO-S25FL512SDPBHI213-CYPRESS-SEMICONDUCTOR

IC FLASH 512M SPI 66MHZ 24BGA FL-S
S25FL512SAGMFIR13

Mfr.#: S25FL512SAGMFIR13

OMO.#: OMO-S25FL512SAGMFIR13-CYPRESS-SEMICONDUCTOR

Flash 512Mb, 3V, 133Mhz SPI NOR Flash
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von S25FL512SAGBHIS10 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
8,72 $
8,72 $
10
8,28 $
82,82 $
100
7,85 $
784,59 $
500
7,41 $
3 705,00 $
1000
6,97 $
6 974,10 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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